ST STPS2060C User Manual

STPS2060C

d

-

High voltage power Schottky rectifier

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

V

(max) 0.7 V

F

Description

2 x 10 A

60 V

A1

A2

A1

K

A2

K

High voltage dual Schottky rectifier suited for
switch mode power supplies and other power
converters.

TO-220AB

STPS2060CT

Packaged in TO-220, this device is intended for
use in medium voltage operation, and particularly,
in high frequency circuitries where low switching
losses and low noise are required.

Order code

Part Number Marking

STPS2060CT STPS2060CT

Table 1. Absolute ratings (limiting values, per diode at 25° C, unless otherwise specified)

Features and benefits

■ Negligible switching losses

■ Low forward voltage drop

■ Low capacitance

■ High reverse avalanche surge capability

■ Avalanche rated

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

Repetitive peak reverse voltage 60 V

RMS forward current Per diode 20 A

Per dio de 10

I

F(AV)

I

FSM

P

ARM

T

--------------

1. condition to avoid thermal runaway for a diode on its own heatsink

Average forward current δ = 0.5 Tc = 135° C

Per device 20

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range -65 to + 150 °C

stg

T

Maximum operating junction temperature

j

Ptot
dTj

1

------------------- -------

<

Rth j a–()

tp = 10 ms
sinusoidal

= 1 µs

t

p

= 25° C

T

j

(1)

Per diode 200 A

Per device 10800 W

A

150 °C

July 2006 Rev 1 1/7

www.st.com

7

Characteristics STPS2060C

1 Characteristics

Table 2. Thermal resistance

Symbol Parameter Value Unit

Per diode 1.6

R

R

th(j-c)

th(c)

Junction to case

Coupling 0.15

When the diodes 1 and 2 are used simultaneously:

∆ T

(diode 1) = P(diode1) x R

j

Table 3. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25° C

(1)

I

R

Reverse leakage current

j

T

= 125° C 100 mA

j

= V

V

R

RRM

150 µA

Tj = 25° C IF = 10 A 0.80

T

= 125° C IF = 10 A 0.60 0.70

(2)

V

Forward voltage drop

F

j

T

= 25° C IF = 20 A 0.94

j

Tj = 125° C IF = 20 A 0.75 0.85

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

°C/WTotal 0.9

V

P = 0.55 x I

F(AV)

+ 0.015 I

F2(RMS)

2/7

STPS2060C Characteristics

Figure 1. Conduction losses versus average

current (per diode)

P (W)

F(AV)

9

8

7

6

5

4

3

2

1

0

0123456789101112

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per
diode)

I(A)

F(AV)

11

10

9

8

7

6

5

4

3

2

1

δ

0

0 25 50 75 100 125 150

=tp/T

T

R =15°C/W

th(j-a)

tp

R=R

th(j-a) th(j-c)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction
temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I(A)

M

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

T =50°C

C

T =75°C

C

T =110°C

C

Figure 6. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

3/7

δ

=tp/T

T

tp