ST STPS2045CH User Manual

STPS2045CH

Power Schottky rectifier

Features

■Very small conduction losses

■Avalanche rated

■Low forward voltage drop

■High frequency operation

Description

This device is a dual diode Schottky rectifier, suited to high frequency switch mode power supply.

Packaged in IPAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.

Figure 1. Electrical characteristics(a)

	V	I
	I	"Forwar d"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

Datasheet − production data

A1

K

A2

A2

K

A1

IPAK

STPS2045CH

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 10 A
	VRRM		45 V
	Tj (max)		175 °C
	VF (max)		0.57 V

a.VARM and IARM must respect the reverse safe operating area defined in Figure 8. VAR and IAR are pulse measurements (tp < 10 µs). VR, IR, VRRM and VF, are static characteristics

June 2012

Doc ID 023045 Rev 1

1/7

This is information on a product in full production.

www.st.com

Characteristics	STPS2045CH

1		Characteristics
Table 2.		Absolute ratings (limiting values, per diode)
Symbol		Parameter								Value	Unit
VRRM		Repetitive peak reverse voltage								45	V
IF(RMS)		Forward rms voltage								20	A
IF(AV)		Average forward current δ = 0.5	Tc = 155 °C				Per diode			10	A
			Tc = 150 °C				Per package			20
	IFSM	Surge non repetitive forward current	tp = 10 ms sine-wave							150	A
P	(1)	Repetitive peak avalanche power	t	p	= 10 µs, T	= 125 °C				280	W
ARM					j
V	(2)	Maximum repetitive peak avalanche voltage	t	p	< 10 µs, T	< 125 °C, I		AR	< 4.7 A	60	V
ARM					j
V	(2)	Maximum single-pulse peak avalanche voltage	t	p	< 10 µs, T	< 125 °C, I		AR	< 4.7 A	60	V
ASM					j
	Tstg	Storage temperature range								-65 to + 175	°C
	Tj	Maximum operating junction temperature(3)								+ 175	°C

1.For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.See Figure 8

3.

dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

Per diode

2.50

°C/W

Total

1.6

Rth (c)

Coupling

0.7

°C/W

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage current

Tj = 25 °C

V

= V

100

µA

R

R

Tj = 125 °C

RRM

7

15

mA

Tj = 125 °C

IF = 10 A

0.5

0.57

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

0.84

V

Tj = 125 °C

0.65

0.72

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.42 x IF(AV) + 0.015 IF2(RMS)

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STPS2045CH	Characteristics

Figure 2. Average forward power dissipation Figure 3. versus average forward current

(per diode)

Junction capacitance versus reverse voltage applied (typical values, per diode)

PF(AV)(W)

9

C(pF)

δ = 0.05 δ = 0.1	δ = 0.2	δ = 0.5	1000
			δ = 1
8			F=1MHz
			VOSC=30mVRMS
7			Tj=25°C
6			500

5

4

3			200
2	T
1			VR(V)
IF(AV)(A)	δ = tp/T	tp

0								100
0	2	4	6	8	10	12	14	1	2	5	10	20	50

Figure 4. Normalized avalanche power derating versus pulse duration

PARM(tp)

1	PARM (10 µs)
0.1
0.01
			tp (µs)
0.001
1	10	100	1000

Figure 5. Relative variation of thermal impedance junction to case versus pulse duration

Z	/R
th(j-c)	th(j-c)

1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1				tP(s)
0.0
1.E-04	1.E-03	1.E-02	1.E-01	1.E+00

Figure 6. Reverse leakage current versus	Figure 7. Forward voltage drop versus
reverse voltage applied	forward current (per diode)
(typical values, per diode)

IR(µA)										IFM(A)
1.E+05										1000
				Tj=150°C
1.E+04				Tj=125°C											Tj=125°C
															(maximum values)
1.E+03				Tj=100°C						100
				Tj=75°C
												Tj=125°C
1.E+02												(typical values)
				Tj=50°C
															Tj=25°C
1.E+01				Tj=25°C						10				(maximum values)
1.E+00
				VR(V)										VFM(V)
1.E-01										1
0	5	10	15	20	25	30	35	40	45	0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8

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