ST STPS2045CH User Manual

Features
Very small conduction losses
Low forward voltage drop
High frequency operation
Description
This device is a dual diode Schottky rectifier, suited to high frequency switch mode power supply.
Packaged in IPAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.

Figure 1. Electrical characteristics

2 x I
I
"Forwar d"
O
I
F
I
O
I
R
V
V
F(Io)
To
V
I
V
RRM
V
V
AR
R
"Reverse"
(a)
X
X
V
V
V
F(2xIo)
F
STPS2045CH
Power Schottky rectifier
Datasheet production data
A1
A2
IPAK
STPS2045CH

Table 1. Device summary

Symbol Value
I
2 x 10 A
F(AV)
V
RRM
175 °C
T
j (max)
V
F (max)
K
A1
A2
K
0.57 V
45 V
I
AR
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 8. V pulse measurements (t V
, are static characteristics
F
< 10 µs). VR, IR, V
p
and IAR are
AR
RRM
and
June 2012 Doc ID 023045 Rev 1 1/7
This is information on a product in full production.
www.st.com
7
Characteristics STPS2045CH

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
ARM
V
ARM
V
ASM
T
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
2. See Figure 8
3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance parameters

Repetitive peak reverse voltage 45 V
RRM
Forward rms voltage 20 A
T
= 155 °C Per diode 10
Average forward current δ = 0.5
Surge non repetitive forward current t
FSM
(1)
Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 280 W
(2)
Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V
(2)
Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
<
Rth(j-a)
1
dPtot
dTj
(3)
c
= 150 °C Per package 20
T
c
= 10 ms sine-wave 150 A
p
A
+ 175 °C
Symbol Parameter Value Unit
R
Junction to case
th (j-c)
R
Coupling 0.7 °C/W
th (c)
Per diode To t al
2.50
1.6
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R
th(j-c)
th(c)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2%
p
T
= 25 °C
j
T
= 125 °C 7 15 mA
j
= 125 °C IF = 10 A 0.5 0.57
T
j
= 25 °C
j
= 125 °C 0.65 0.72
T
j
= V
V
R
I
= 20 A
F
RRM
100 µA
0.84
V T
To evaluate the conduction losses use the following equation: P = 0.42 x I
F(AV)
+ 0.015 I
F2(RMS)
2/7 Doc ID 023045 Rev 1
STPS2045CH Characteristics
Figure 2. Average forward power dissipation
versus average forward current (per diode)
P
(W)
F(AV)
9
8
7
6
5
4
3
2
1
0
02468101214
δ = 0.05
δ = 0.1
I
F(AV)
δ = 0.2
(A)
δ = 0.5
δ = tp/T
δ = 1
T
tp
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
(10 µs)
P
ARM
1
0.1
0.01
t (µs)
0.001 1 10 100 1000
p
Figure 3. Junction capacitance versus
reverse voltage applied (typical values, per diode)
C(pF)
1000
500
200
V (V)
100
12 51020 50
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
Figure 5. Relative variation of thermal
impedance junction to case versus pulse duration
Z
th(j -c)/Rth(j -c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
tP(s)
Figure 6. Reverse leakage current versus
reverse voltage applied (typical values, per diode)
I (µA)
R
1.E+05
T=150°C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01 0 5 10 15 20 25 30 35 40 45
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
V (V)
R
Doc ID 023045 Rev 1 3/7
Figure 7. Forward voltage drop versus
forward current (per diode)
I (A)
FM
1000
T=125°C
j
(maximum values)
100
T=125°C
j
(typical values)
T=25°C
j
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(maximum values)
V (V)
FM
Characteristics STPS2045CH
Figure 8. Reverse safe operating area
(t
< 10 µs and Tj < 125 °C)
p
Iarm (A)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0 30 40 50 60 70 80
Varm (V)
Figure 9. Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
(A)
F(AV)
12
R
10
8
6
4
δ = tp/T
T
tp
2
0
0 25 50 75 100 125 150 175
th(j-a)=Rth(j-c)
T
(°C)
amb
4/7 Doc ID 023045 Rev 1
STPS2045CH Package information

2 Package information

Epoxy meets UL94, V0
Lead-free package
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com ECOPACK

Table 5. IPAK Dimensions

®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
.
Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A3 0.70 1.30 0.027 0.051
A
E
B2
L2
C2
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
B3 0.95 0.037
B5 0.30 0.035
D
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.019 0.023
H
L1
L
B3
B V1
A1
D 6 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
e2.28 0.090
B5
e
G
C
A3
G 4.40 4.60 0.173 0.181
H 16.10 0.634
L 9 9.40 0.354 0.370
L1 0.8 1.20 0.031 0.047
L2 0.80 1 0.031 0.039
V1 10° 10°
Doc ID 023045 Rev 1 5/7
Ordering information STPS2045CH

3 Ordering information

Table 6. Ordering information

Order code Marking Package Weight Base qty Delivery mode
STPS2045CH S2045CH IPAK 0.35 g 75 Tube

4 Revision history

Table 7. Document revision history

Date Revision Changes
21-Jun-2012 1 First issue
6/7 Doc ID 023045 Rev 1
STPS2045CH
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Doc ID 023045 Rev 1 7/7
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