ST STPS2045CH User Manual
Features
■ Very small conduction losses
■ Avalanche rated
■ Low forward voltage drop
■ High frequency operation
Description
This device is a dual diode Schottky rectifier,
suited to high frequency switch mode power
supply.
Packaged in IPAK, this device is intended to be
used in notebook, game station and desktop
adapters, providing in these applications a good
efficiency at both low and high load.
Figure 1. Electrical characteristics
2 x I
I
"Forwar d"
O
I
F
I
O
I
R
V
V
F(Io)
To
V
I
V
RRM
V
V
AR
R
"Reverse"
(a)
X
X
V
V
V
F(2xIo)
F
STPS2045CH
Power Schottky rectifier
Datasheet − production data
A1
A2
IPAK
STPS2045CH
Table 1. Device summary
Symbol Value
I
2 x 10 A
F(AV)
V
RRM
175 °C
T
j (max)
V
F (max)
K
A1
A2
K
0.57 V
45 V
I
AR
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 8. V
pulse measurements (t
V
, are static characteristics
F
< 10 µs). VR, IR, V
p
and IAR are
AR
RRM
and
June 2012 Doc ID 023045 Rev 1 1/7
This is information on a product in full production.
www.st.com
7
Characteristics STPS2045CH
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
ARM
V
ARM
V
ASM
T
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements
2. See Figure 8
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance parameters
Repetitive peak reverse voltage 45 V
RRM
Forward rms voltage 20 A
T
= 155 °C Per diode 10
Average forward current δ = 0.5
Surge non repetitive forward current t
FSM
(1)
Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 280 W
(2)
Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V
(2)
Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 4.7 A 60 V
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
<
Rth(j-a)
1
dPtot
dTj
(3)
c
= 150 °C Per package 20
T
c
= 10 ms sine-wave 150 A
p
A
+ 175 °C
Symbol Parameter Value Unit
R
Junction to case
th (j-c)
R
Coupling 0.7 °C/W
th (c)
Per diode
To t al
2.50
1.6
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
Table 4. Static electrical characteristics (per diode)
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2%
p
T
= 25 °C
j
T
= 125 °C 7 15 mA
j
= 125 °C IF = 10 A 0.5 0.57
T
j
= 25 °C
j
= 125 °C 0.65 0.72
T
j
= V
V
R
I
= 20 A
F
RRM
100 µA
0.84
V T
To evaluate the conduction losses use the following equation:
P = 0.42 x I
F(AV)
+ 0.015 I
F2(RMS)
2/7 Doc ID 023045 Rev 1
STPS2045CH Characteristics
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
P
(W)
F(AV)
9
8
7
6
5
4
3
2
1
0
02468101214
δ = 0.05
δ = 0.1
I
F(AV)
δ = 0.2
(A)
δ = 0.5
δ = tp/T
δ = 1
T
tp
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
(10 µs)
P
ARM
1
0.1
0.01
t (µs)
0.001
1 10 100 1000
p
Figure 3. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
500
200
V (V)
100
12 51020 50
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
Figure 5. Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j -c)/Rth(j -c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
tP(s)
Figure 6. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
I (µA)
R
1.E+05
T=150°C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0 5 10 15 20 25 30 35 40 45
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
V (V)
R
Doc ID 023045 Rev 1 3/7
Figure 7. Forward voltage drop versus
forward current (per diode)
I (A)
FM
1000
T=125°C
j
(maximum values)
100
T=125°C
j
(typical values)
T=25°C
j
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
(maximum values)
V (V)
FM
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