ST STPS2045C User Manual
STPS2045C
Power Schottky rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Insulated package: TO-220FPAB
Insulating voltage = 2000 V DC
Capacitance = 12 pF
■ Avalanche rated
Description
Dual center tap Schottky rectifier suited for switch
mode power supply and high frequency DC to DC
converters.
Packaged either in TO-220AB, TO-220FPAB,
2
I
PA K , o r D2PAK, this device is especially
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
A1
A2
A2
K
A1
TO-220AB
STPS2045CT
K
A1
A2
STPS2045CR
TO-220FPAB
STPS2045CFP
Table 1. Device summary
STPS2045CG
Symbol Value
2 x 10 A
I
F(AV)
V
45 V
RRM
T
j(max)
0.57 V
V
F(typ)
K
I2PAK
K
D
2
PAK
175 °C
A2
K
A1
A2
A1
February 2010 Doc ID 3506 Rev 6 1/10
www.st.com
10
Characteristics STPS2045C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 45 V
RRM
Forward rms current 30 A
Average forward current δ = 0.5
TO-220AB
2
PAK I2PA K
D
T
= 155 °C Per diode 10
c
TO-220FPAB Tc = 125 °C Per device 20
I
P
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistances parameters
Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
FSM
Repetitive peak avalanche power tp = 1 μs Tj = 25 °C 4000 W
ARM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
(1)
175 °C
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Coupling
TO-220AB / D
TO-220FPAB
TO-220AB / D
2
PA K / I2PA K
2
PA K / I2PA K
Per diode
To ta l
Per diode
To ta l
Coupling
TO-220FPAB 2.5
2.2
1.3
°C/W
4.5
3.5
0.3
°C/W
A
When the diodes 1 and 2 are used simultaneously :
T
(diode 1) = P(diode 1) x R
j
Table 4. Static electrical characteristics (per diode)
Symbol Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test : tp = 380 μs, δ < 2%
Reverse leakage current
R
(1)
Forward voltage drop
F
To evaluate the conduction losses use the following equation : P = 0.42 x I
2/10 Doc ID 3506 Rev 6
(per diode) + P(diode 2) x R
th(j-c)
= 25 °C
T
j
= 125 °C 7 15 mA
T
j
T
= 125 °C IF = 10 A 0.5 0.57
j
= 25 °C
j
Tj = 125 °C 0.65 0.72
th(c)
V
= V
R
= 20 A
I
F
RRM
F(AV)
+ 0.015 I
100 μA
0.84
F2(RMS)
VT
STPS2045C Characteristics
Figure 1. Average forward power dissipation
vs average forward current
(per diode)
P (W)
F(AV)
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating vs pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
Figure 2. Average forward current vs ambient
temperature (
I (A)
F(AV)
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
δ = 0.5, per diode)
R=R
th(j-a) th(j-c)
TO-220FPAB
R =15°C/W
th(j-a)
T (°C)
amb
TO-220AB
D²PAK
Figure 4. Normalized avalanche power
derating vs junction temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
I (A)
M
140
120
100
80
60
40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
(TO-220AB, D PAK, I PAK)
t(s)
22
T =75°C
C
T =100°C
C
T =125°C
C
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Non repetitive surge peak forward
current vs overload duration
(maximum values, per diode)
I (A)
M
100
(TO-220FPAB)
80
60
40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
T =75°C
C
T =100°C
C
T =125°C
C
Doc ID 3506 Rev 6 3/10
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