ST STPS2030CT, STPS2030CG, STPS2030CR User Manual

®
STPS2030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x10A
30 V
Tj (max) 150°C
(max) 0.40 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP FOR
HIGHER EFFICIENCY LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters.
2
PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications.
A1
A2
K
A2
A1
D2PAK
STPS2030CG
K
A2
K
A1
TO-220AB
STPS2030CT
A2
K
A1
I2PAK
STPS2030CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage RMS forward current Average forward
current
I
FSM
I
RRM
I
RSM
P
ARM
T
Tj
dV/dt
dPtot
*:
Surge non repetitive forwardcurrent tp = 10 ms Sinusoidal Peak repetitive reverse current tp=2 µs square F=1kHz Non repetitive peak reversecurrent tp = 100 µs square Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range Maximum operating junction temperature* Critical rate of riseof reverse voltage (rated V
<
dTj Rth j a
July 2003 - Ed: 3A
Tc = 140°C δ = 0.5
, Tj = 25°C)
R
Per diode Per device
thermal runaway condition for a diode on its own heatsink
−1()
30 V 30 A 10
20
180 A
1A 2A
3000 W
- 65 to + 150 °C 150 °C
10000 V/µs
A
1/6
STPS2030CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(c)
Junction to case TO-220AB - D2PAK-I2PAK
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
*
R
V
F
Reverse leakage current
*
Forward voltage drop Tj= 25°CI
Tj = 25°C VR=V Tj = 125°C
Tj = 125°C I Tj=25°CI Tj = 125°C I
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation : P=0.28xI
F(AV)
+ 0.012 I
F2(RMS)
Per diode
Total
2.2
1.3
Coupling 0.3 °C/W
RRM
0.15 1.0 mA 80 160
=10A
F
=10A
F
=20A
F
=20A
F
0.44 0.50 V
0.34 0.40
0.50 0.58
0.44 0.52
°C/W
Fig.1:Conductionlossesversus average current.
P (W)
F(AV)
6
5
4
3
2
1
0
012345678910111213
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
δ = 1
=tp/T
T
tp
Fig. 3: Normalized avalanche power derating versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient temperature(δ = 0.5).
I (A)
F(AV)
11 10
9 8 7 6 5 4 3 2 1 0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =50°C/W
th(j-a)
T (°C)
amb
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2 1
0.8
0.6
0.4
0.2 0
0 25 50 75 100 125 150
T (°C)
j
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STPS2030CT/CG/CR
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum values).
I (A)
M
175
150
125
100
75
50
IM
25
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
a
T =75°C
a
T =125°C
a
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
I (mA)
R
1.E+03
T=150°C
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03 0 5 10 15 20 25 30
j
T=125°C
j
T=100°C
j
T=75°C
j
T=50°C
j
T=25°C
j
V (V)
R
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2 δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
C(nF)
10.0
1.0
V (V)
0.1 1 10 100
R
F=1MHz
V =30mV
OSC
T=25°C
j
RMS
Fig. 9: Forward voltage drop versus forward current.
I (A)
FM
100
T=125°C
j
(maximum values)
V (V)
FM
T=25°C
j
(maximum values)
T=125°C
j
(typical values)
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35µm).
R (°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
S(Cu)(cm²)
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STPS2030CT/CG/CR
PACKAGE MECHANICAL DATA
I²PAK
E
L2
L1
b2
L
b1
b
e
c2
D
A1
REF. DIMENSIONS
Millimeters Inches
A
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
c
L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055
4/6
PACKAGE MECHANICAL DATA
D²PAK
L2
E
L
L3
B2 B
G
* FLAT ZONE NO LESS THAN 2mm
C2
A1
STPS2030CT/CG/CR
REF. DIMENSIONS
Millimeters Inches
A
A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
M
*
V2
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ. V2
Min. Max. Min. Max.
FOOTPRINT
10.30
8.90
16.90
5.08
1.30
3.70
5/6
STPS2030CT/CG/CR
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
COOLING METHOD : C
RECOMMENDED TORQUE VALUE : 0.55 M.N
MAXIMUM TORQUE VALUE : 0.70 M.N
L9
L4
REF.
A
C
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Ordering type Marking Package Weight Base qty Delivery mode
STPS2030CT STPS2030CT TO-220AB 2.2 g 50 Tube
STPS2030CG STPS2030CG D²PAK 1.48 g 50 Tube
STPS2030CG-TR STPS2030CG D²PAK 1.48 g 1000 Tape & reel
STPS2030CR STPS2030CR I²PAK 1.49 g 50 Tube
EPOXY MEETS UL94,V0
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityforthe consequences of useof such information nor for any infringement of patentsor other rights of third parties which mayresultfrom its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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