ST STPS2030CT, STPS2030CG, STPS2030CR User Manual
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STPS2030CT/CG/CR |
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LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
IF(AV) |
2 x 10 A |
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VRRM |
30 V |
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Tj (max) |
150°C |
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VF (max) |
0.40 V |
FEATURES AND BENEFITS
■VERY SMALL CONDUCTION LOSSES
■NEGLIGIBLE SWITCHING LOSSES
■EXTREMELY FAST SWITCHING
■LOW FORWARD VOLTAGE DROP FOR HIGHER EFFICIENCY
■LOW THERMAL RESISTANCE
■AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters.
Packaged in TO-220AB, D2PAK and I2PAK, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A1 
K
A2 
K 
A2 |
A2 |
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K |
A1
A1
TO-220AB D2PAK STPS2030CT
STPS2030CG
A2
K
A1
I2PAK
STPS2030CR
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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30 |
V |
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IF(RMS) |
RMS forward current |
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30 |
A |
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IF(AV) |
Average forward |
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Tc = 140°C |
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Per diode |
10 |
A |
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current |
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δ = 0.5 |
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Per device |
20 |
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IFSM |
Surge non repetitive forward current |
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tp = 10 ms |
Sinusoidal |
180 |
A |
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IRRM |
Peak repetitive reverse current |
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tp=2 µs square F=1kHz |
1 |
A |
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IRSM |
Non repetitive peak reverse current |
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tp = 100 µs |
square |
2 |
A |
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PARM |
Repetitive peak avalanche power |
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tp = 1µs Tj = 25°C |
3000 |
W |
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Tstg |
Storage temperature range |
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- 65 to + 150 |
°C |
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Tj |
Maximum operating junction temperature * |
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150 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) |
10000 |
V/µs |
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* : |
dPtot |
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1 |
thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j − a) |
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July 2003 - Ed: 3A |
1/6 |
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STPS2030CT/CG/CR
THERMAL RESISTANCES
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Value |
Unit |
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Rth(j-c) |
Junction to case TO-220AB - D2PAK - I2PAK |
Per diode |
2.2 |
°C/W |
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Total |
1.3 |
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Rth(c) |
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Coupling |
0.3 |
°C/W |
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STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameter |
Tests Conditions |
Min. |
Typ. |
Max. |
Unit |
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IR * |
Reverse leakage |
Tj = 25°C |
V R = VRRM |
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0.15 |
1.0 |
mA |
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current |
Tj = 125°C |
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80 |
160 |
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VF * |
Forward voltage drop |
Tj = 25°C |
IF = 10 A |
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0.44 |
0.50 |
V |
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Tj = 125°C |
I F = 10 A |
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0.34 |
0.40 |
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Tj = 25°C |
IF = 20 A |
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0.50 |
0.58 |
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Tj = 125°C |
I F = 20 A |
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0.44 |
0.52 |
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Pulse test : |
* tp = 380 µs, δ < 2% |
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To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.012 IF2(RMS)
Fig. 1: Conduction losses versus average current.
PF(AV)(W)
6 |
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δ = 0.2 |
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δ = 0.1 |
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δ = 0.5 |
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5 |
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δ = 0.05 |
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4 |
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δ = 1 |
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3 |
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2 |
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T |
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1 |
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0 |
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IF(AV)(A) |
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δ=tp/T |
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tp |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
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10 |
11 |
12 |
13 |
Fig. 3: Normalized avalanche power derating |
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versus pulse duration. |
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PARM(tp) |
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PARM(1µs) |
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1 |
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0.1 |
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0.01 |
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0.001 |
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tp(µs) |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
2/6 |
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Fig. 2: Average forward current versus ambient temperature(δ = 0.5).
IF(AV)(A)
11 |
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10 |
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Rth(j-a)=Rth(j-c) |
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9 |
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8 |
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7 |
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6 |
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5 |
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Rth(j-a)=50°C/W |
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4 |
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3 |
T |
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2 |
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1 |
δ=tp/T |
tp |
Tamb(°C) |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
Fig. 4: Normalized avalanche power derating versus junction temperature.
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PARM(tp) |
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PARM(25°C) |
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1.2 |
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1 |
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0.8 |
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0.6 |
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0.4 |
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0.2 |
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0 |
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Tj(°C) |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
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