ST STPS20170C User Manual

®

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

V

V

F

I

F(AV)

RRM

T

j

(max)

2 x 10 A

170 V

175°C

0.75 V

STPS20170C

A1

K

A2

K

K

Features

■ High reverse voltage

■ High junction temperature capability

■ Avalanche specification with derating curves

Benefits

■ Can challenge bipolar ultrafast diodes with

better dynamic characteristics.

Description

Dual center tap Schottky rectifier diode su ited for
high frequency switched mode power supplies.

A2

K

A1

TO-220AB

STPS20170CT

A2

K

A1

TO-220FPAB

STPS20170CFP

D2PAK

STPS20170CG

K

2

I

STPS20170CR

Table 2: Order Codes

Part Numbers Marking

STPS20170CT STPS20170CT

STPS20170CFP STPS20170CFP

STPS20170CR STPS20170CR

A1

PAK

A2

A2

K

A1

June 2005

STPS20170CG STPS20170CG

STPS20170CG-TR STPS20170CG

REV. 2

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STPS20170C

d

-

Table 3: Absolute Ratings (limiting values, per diod e)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

* : thermal runaway condition for a diode on its own heatsink

dTj

Table 4: Thermal Parameters

Repetitive peak reverse voltage 170 V
RMS forward voltage 30 A

TO-220AB /

Average forward current

2

PAK / I2PAK

D

δ = 0.5

TO-220FPAB

Surge non repetitive forward current
Repetitive peak avalanche po wer
Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature * 175 °C

j

1

------------------------- -

<

Rth j a–()

= 155°C

T

c

Per diode
Per device

= 135°C

T

c

t

= 10ms sinusoidal

p

t

= 1µs Tj = 25°C

p

Per diode
Per device

6700 W

10
20

10
20

180 A

A

Symbol Parameter Value Unit

TO-220AB / D

R

th(j-c)

Junction to case

TO-220FPAB

R

th(c)

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R

th(j-c)

TO-220AB / D2PAK / I2PAK
TO-220FPAB 2.5

(Per diode) + P(diode 2) x R

2

PAK / I2PAK

th(c)

Per diode
Total

Per diode
Total

Coupling

2.2

1.3

4.5

3.5

0.3

°C/W

Table 5: Static Electrical Characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ Max. Unit

T

= 25°C

*

I

R

V

F

Pulse test: * tp = 5 ms, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.64 x I

Reverse leakage current

**

Forward voltage drop

** tp = 380 µs,

δ < 2%

j

= 125°C

T

j

= 25°C

T

j

= 125°C

T

j

= 25°C

T

j

= 125°C

T

j

V

R

I

F

I

F

= V

= 10A

= 20A

F(AV)

RRM

+ 0.011 I

0.69 0.75

0.79 0.86

F2(RMS)

15 µA
15 mA

0.90

V

0.99

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STPS20170C

Figure 1: Average forward power dissipation
versus average forward current (per diode)

P (W)

F(AV)

10

9
8
7
6
5
4
3
2
1
0

0123456789101112

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

12
11
10

9
8
7
6
5
4
3
2

=tp/T

1

δ

0

0 25 50 75 100 125 150 175

R =15°C/W

th(j-a)

T

tp

R=R

th(j-a) th(j-c)

T (°C)

amb

R=R

th(j-a) th(j-c)

(TO-220FPAB)

22

(TO-220AB,I PAK and D PAK)

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum

2

values, per diode) (TO-220AB, D

I (A)

M

150

125

100

75

50

IM

25

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

PAK, I2PAK)

T =50°C

C

T =75°C

C

T =125°C

C

Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)

I (A)

M

100

90
80
70
60
50
40
30

IM

20
10

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

T =50°C

C

T =75°C

C

T =125°C

C

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STPS20170C

Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

22

(TO-220AB,I PAK and D PAK)

(TO-220FPAB)

t (s)

p

δ

=tp/T

T

tp

Figure 9: Junction capacitance versus reverse
voltage applied (typical values, per diode)

C(pF)

1000

100

F=1MHz

V =30mV

OSC RMS

T=25°C

j

Figure 8: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)

I (µA)

R

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01
0 25 50 75 100 125 150 175

T=175°C

j

T=150°C

j

T=125°C

j

T=100°C

j

T=25°C

j

V (V)

R

Figure 10: Forward voltage drop versus
forward current (per diode)

I (A)

FM

100.0

T=125°C

j

(maximum values)

T=25°C

10.0

T=125°C

j

(typical values)

j

(maximum values)

V (V)

10

1 10 100 1000

R

Figure 11: Thermal resistance junction to am­bient versus copper surface under tab (epoxy

2

printed board FR4, Cu = 35µm) (D

R (°C/W)

th(j-a)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

S(cm²)

PAK)

1.0

V (V)

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

FM

4/8

Figure 12: D2PAK Package Mechanical Data

m

D

A

L2

E

L

L3

B2
B

G

* FLAT ZONE NO LESS THAN 2m

C2

A1

C

A2

M

R

*

V2

STPS20170C

DIMENSIONS

REF.

A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067

C 0.45 0.60 0.017 0.024

C2 1.23 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368

E 10.00 10.40 0.393 0.409

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.

V2 0° 8° 0° 8°

Millimeters Inches

Min. Max. Min. Max.

Figure 13: Foot Print Dimensions (in millimeters)

16.90

10.30

8.90

3.70

5.08

1.30

5/8

STPS20170C

Figure 14: I2PAK Package Mechanical Data

A

L2

E

L1

L

b1

b

e

e1

c2

D

A1

c

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.40 4.60 0.173 0.181

A1 2.40 2.72 0.094 0.107

b 0.61 0.88 0.024 0.035

b1 1.14 1.70 0.044 0.067

c 0.49 0.70 0.019 0.028

c2 1.23 1.32 0.048 0.052

D 8.95 9.35 0.352 0.368

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.195 0.203

E 10 10.40 0.394 0.409

L 13 14 0.512 0.551
L1 3.50 3.93 0.138 0.155
L2 1.27 1.40 0.050 0.055

Figure 15: TO-220FPAB Package Mechanical Data

A

B

Dia

L7

E

L3

L2

L4

G1

H

L6

L5

F1

F2

F

G

D

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067

G 4.95 5.20 0.195 0.205

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366

Dia. 3.00 3.20 0.118 0.126

6/8

Figure 16: TO-220AB Package Mechanical Data

A

C

L7

D

M

E

L2

F2

F1

H2

Dia

L5

L6

L9

L4

F

G1

G

STPS20170C

DIMENSIONS

REF.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066

G 4.95 5.15 0.194 0.202

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154

M 2.6 typ. 0.102 typ .

Diam. 3.75 3.85 0.147 0.151

Millimeters Inches

Min. Max. Min. Max.

Table 6: Ordering Information

Ordering type Marking Package Weight Base qty

Delivery

mode

STPS20170CT STPS20170CT TO-220AB 2.20 g 50 Tube

STPS20170CFP STPS20170CFP TO-220FPAB 2 g 50 Tube

STPS20170CR STPS20170CR

STPS20170CG STPS20170CG

STPS20170CG-TR STPS20170CG 1000 Tape & reel

■ Epoxy meets UL94, V0

■ Cooling method: by conduction (C)

■ Recommended torque value: 0.8 m.N.

■ Maximum to rque value: 1.0 m.N.

I

D

2

PAK

2

PAK

1.49 g 50 Tube

1.48 g

50 Tube

Table 7: Revision History

Date Revision Description of Changes

Mar-2004 1 First issue.

28-Jul-2005 2

TO-220FPAB, I

2

PAK and D2PAK packages added.

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STPS20170C

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of use of such information nor for any infri ngement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without no tice. This publication supersedes and repl aces all information previously supplied. ST Microelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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