STPS20150C
® |
STPS20150CT/CG/CR/CFP |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV) |
2 x 10 A |
VRRM |
150 V |
Tj |
175°C |
VF (max) |
0.75 V |
FEATURES AND BENEFITS
■HIGH JUNCTION TEMPERATURE CAPABILITY
■GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP
■LOW LEAKAGE CURRENT
■AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
A1 |
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K |
A2 |
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K |
K |
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A2 |
A2 |
A1 |
K |
A1 |
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D2PAK |
I2PAK |
STPS20150CG |
STPS20150CR |
A2 |
A2 |
K |
K |
A1 |
A1 |
TO-220AB |
TO-220FPAB |
STPS20150CT |
STPS20150CFP |
Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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150 |
V |
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IF(RMS) |
RMS forward current |
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30 |
A |
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IF(AV) |
Average forward current |
TO-220AB |
Tc = 155°C |
Per diode |
10 |
A |
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δ = 0.5 |
D2PAK / I2PAK |
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TO-220FPAB |
Tc = 135°C |
Per device |
20 |
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IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
180 |
A |
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PARM |
Repetitive peak avalanche power |
tp = 1µs Tj = 25°C |
6700 |
W |
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Tstg |
Storage temperature range |
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- 65 to + 175 |
°C |
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Tj |
Maximum operating junction temperature |
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175 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
V/µs |
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July 2003 - Ed: 6D |
1/7 |
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STPS20150CT/CG/CR/CFP
THERMAL RESISTANCES
Symbol |
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Parameter |
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Value |
Unit |
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Rth(j-c) |
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Junction to case |
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TO-220AB / D2PAK / I2PAK |
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Per diode |
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2.2 |
°C/W |
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TO-220FPAB |
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4.5 |
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TO-220AB / D2PAK / I2PAK |
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Total |
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1.3 |
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TO-220FPAB |
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3.5 |
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Rth(c) |
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TO-220AB / D2PAK / I2PAK |
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Coupling |
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0.3 |
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TO-220FPAB |
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2.5 |
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When the diodes 1 and 2 are used simultaneously : |
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Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) |
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STATIC ELECTRICAL CHARACTERISTICS (per diode) |
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Symbol |
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Parameter |
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Tests conditions |
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Min. |
Typ. |
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Max. |
Unit |
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IR * |
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Reverse leakage current |
Tj = 25°C |
V R = VRRM |
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5.0 |
µA |
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Tj = 125°C |
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5.0 |
mA |
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VF ** |
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Forward voltage drop |
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Tj = 25°C |
IF = 10 A |
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0.92 |
V |
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Tj = 125°C |
I F = 10 A |
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0.69 |
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0.75 |
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Tj = 25°C |
IF = 20 A |
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1 |
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Tj = 125°C |
I F = 20 A |
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0.79 |
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0.86 |
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Pulse test : * tp = 5 ms, δ < 2% |
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** tp = 380 µs, δ < 2% |
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To evaluate the conduction losses use the following equation:
P = 0.64 x IF(AV) + 0.011 IF2(RMS)
2/7
STPS20150CT/CG/CR/CFP
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(AV)(W)
10 |
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δ = 0.1 |
δ = 0.2 |
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9 |
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δ = 0.05 |
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δ = 0.5 |
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8 |
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7 |
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δ = 1 |
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6 |
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5 |
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4 |
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3 |
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T |
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2 |
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1 |
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IF(AV)(A) |
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δ=tp/T |
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tp |
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0 |
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0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode).
IF(AV)(A) |
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12 |
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11 |
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Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK) |
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10 |
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9 |
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Rth(j-a)=Rth(j-c) (TO-220FPAB) |
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8 |
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7 |
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6 |
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Rth(j-a)=15°C/W |
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5 |
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4 |
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3 |
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T |
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2 |
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1 |
δ=tp/T |
tp |
Tamb(°C) |
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0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
Fig. 3: Normalized avalanche power derating versus pulse duration.
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) |
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PARM(1µs) |
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1 |
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0.1 |
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0.01 |
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0.001 |
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tp(µs) |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
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PARM(tp) |
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PARM(25°C) |
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1.2 |
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1 |
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0.8 |
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0.6 |
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0.4 |
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0.2 |
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0 |
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Tj(°C) |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220AB, I²PAK and D²PAK
IM(A) |
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150 |
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TO-220AB, I2PAK and D2PAK |
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125 |
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100 |
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TC=50°C |
75 |
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TC=75°C |
50 |
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IM |
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TC=125°C |
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25 |
t |
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t(s) |
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δ=0.5 |
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0 |
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1.E-03 |
1.E-02 |
1.E-01 |
1.E+00 |
Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220FPAB
IM(A) |
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100 |
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90 |
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TO-220FPAB |
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80 |
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70 |
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60 |
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TC=50°C |
50 |
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40 |
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TC=75°C |
30 |
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20 |
IM |
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TC=125°C |
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10 |
t |
t(s) |
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δ=0.5 |
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0 |
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1.E-03 |
1.E-02 |
1.E-01 |
1.E+00 |
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3/7 |