ST STPS20150CT, STPS20150CG, STPS20150CR, STPS20150CFP User Manual

STPS20150C

®	STPS20150CT/CG/CR/CFP

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)	2 x 10 A
VRRM	150 V
Tj	175°C
VF (max)	0.75 V

FEATURES AND BENEFITS

■HIGH JUNCTION TEMPERATURE CAPABILITY

■GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP

■LOW LEAKAGE CURRENT

■AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies.

ABSOLUTE RATINGS (limiting values, per diode)

A1
	K
A2
	K
K
A2	A2
A1	K
	A1
D2PAK	I2PAK
STPS20150CG	STPS20150CR
A2	A2
K	K
A1	A1
TO-220AB	TO-220FPAB
STPS20150CT	STPS20150CFP

Symbol		Parameter			Value	Unit
VRRM	Repetitive peak reverse voltage				150	V
IF(RMS)	RMS forward current				30	A
IF(AV)	Average forward current	TO-220AB	Tc = 155°C	Per diode	10	A
	δ = 0.5	D2PAK / I2PAK
		TO-220FPAB	Tc = 135°C	Per device	20
IFSM	Surge non repetitive forward current		tp = 10 ms sinusoidal		180	A
PARM	Repetitive peak avalanche power		tp = 1µs Tj = 25°C		6700	W
Tstg	Storage temperature range				- 65 to + 175	°C
Tj	Maximum operating junction temperature				175	°C
dV/dt	Critical rate of rise of reverse voltage				10000	V/µs

July 2003 - Ed: 6D	1/7

STPS20150CT/CG/CR/CFP

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB / D2PAK / I2PAK

Per diode

2.2

°C/W

TO-220FPAB

4.5

TO-220AB / D2PAK / I2PAK

Total

1.3

TO-220FPAB

3.5

Rth(c)

TO-220AB / D2PAK / I2PAK

Coupling

0.3

TO-220FPAB

2.5

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

Tj = 25°C

V R = VRRM

5.0

µA

Tj = 125°C

5.0

mA

VF **

Forward voltage drop

Tj = 25°C

IF = 10 A

0.92

V

Tj = 125°C

I F = 10 A

0.69

0.75

Tj = 25°C

IF = 20 A

1

Tj = 125°C

I F = 20 A

0.79

0.86

Pulse test : * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.011 IF2(RMS)

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STPS20150CT/CG/CR/CFP

Fig. 1: Average forward power dissipation versus average forward current (per diode).

PF(AV)(W)

10						δ = 0.1	δ = 0.2
9				δ = 0.05					δ = 0.5
8
7											δ = 1
6
5
4
3											T
2
1					IF(AV)(A)					δ=tp/T		tp
0
0	1	2	3	4	5	6	7	8	9	10	11	12

Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode).

IF(AV)(A)
12
11				Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
10
9				Rth(j-a)=Rth(j-c) (TO-220FPAB)
8
7
6			Rth(j-a)=15°C/W
5
4
3		T
2
1	δ=tp/T	tp	Tamb(°C)
0
0	25	50	75	100	125	150	175

Fig. 3: Normalized avalanche power derating versus pulse duration.

Fig. 4: Normalized avalanche power derating versus junction temperature.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220AB, I²PAK and D²PAK

IM(A)
150
		TO-220AB, I2PAK and D2PAK
125
100
			TC=50°C
75
			TC=75°C
50
IM			TC=125°C
25	t
		t(s)
	δ=0.5
0
1.E-03	1.E-02	1.E-01	1.E+00

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). TO-220FPAB

IM(A)
100
90			TO-220FPAB
80
70
60			TC=50°C
50
40			TC=75°C
30
20	IM		TC=125°C
10	t	t(s)
	δ=0.5
0
1.E-03	1.E-02	1.E-01	1.E+00
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