ST STPS20150C User Manual

STPS20150C

High voltage power Schottky rectifier

Features

■HIgh junction temperature capability

■Good trade off between leakage current and forward voltage drop

■Low leakage current

■Avalanche capability specified

■Insulated package TO-220FPAB:

–Insulating voltage = 2000 V

–Typical package capacitance 12 pF

Description

Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies.

	A1
	K
	A2
K	K
	A2

A1	A2
	K
	A1
D2PAK	I2PAK
STPS20150CG	STPS20150CR
	STPS20150CR-H

A2	A2
K	K
A1	A1
TO-220AB	TO-220FPAB
STPS20150CT	STPS20150CFP
STPS20150CT-H

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 10 A
	VRRM		150 V
	Tj		175 °C
	VF(max)		0.75 V

January 2011

Doc ID 7756 Rev 9

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Characteristics	STPS20150C

1 Characteristics

Table 2.		Absolute ratings (limiting values)
Symbol							Parameter			Value	Unit
VRRM		Repetitive peak reverse voltage								150	V
IF(RMS)		Forward rms voltage								30	A
		Average forward				TO-220AB		Tc = 155 °C	Per diode	10
IF(AV)						2	2
		current δ = 0.5				I	PAK, D PAK				A
						TO-220FPAB		Tc = 135 °C	Per device	20
IFSM		Surge non repetitive forward current						tp = 10 ms sinusoidal		180	A
PARM		Repetitive peak avalanche power						tp = 1 µs Tj = 25 °C		6700	W
Tstg		Storage temperature range								- 65 to + 150	°C
Tj		Maximum operating junction temperature(1)								175	°C
1. dPtot <		1		condition to avoid thermal runaway for a diode on its own heatsink
		Rth(j-a)
dTj
Table 3.		Thermal resistance
Symbol							Parameter			Value	Unit
						TO-220AB, D2PAK, I2PAK			Per diode	2.2
Rth(j-c)		Junction to case				TO-220FPAB				4.5
						TO-220AB, D2PAK, I2PAK			Total	1.3	°C/W
						TO-220FPAB				3.5
Rth(c)		Coupling				TO-220AB, D2PAK, I2PAK				0.3
						TO-220FPAB				2.5

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-l)(Per diode) + P(diode 2) x Rth(c)

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage current

Tj = 25 °C

V

= V

5.0

µA

R

R

Tj = 125 °C

RRM

5.0

mA

Tj = 25 °C

IF = 10 A

0.92

VF

(2)

Forward voltage drop

Tj = 125 °C

0.69

0.75

V

Tj = 25 °C

IF = 20 A

1

Tj = 125 °C

0.79

0.86

1.tp = 5 ms, δ < 2%

2.tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.011 IF2(RMS)

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STPS20150C	Characteristics

Figure 1. Average forward power dissipation versus average forward current (per diode)

Figure 2. Average forward current versus ambient temperature

(δ = 0.5, per diode)

PF(AV)(W)													IF(AV)(A)
10						δ = 0.1	δ = 0.2						12
9				δ = 0.05					δ = 0.5				11				Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK and D2PAK)
8													10
													9
7																	Rth(j-a)=Rth(j-c) (TO-220FPAB)
											δ = 1		8
6													7
5													6			Rth(j-a)=15°C/W
4													5
3													4
											T				T
													3
2
													2
1					IF(AV)(A)					δ=tp/T		tp	1	δ=tp/T	tp	Tamb(°C)
0													0
0	1	2	3	4	5	6	7	8	9	10	11	12	0	25	50	75	100	125	150	175

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)						PARM(Tj)
PARM(1µs)						PARM(25 °C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001					tp(µs)	0					Tj(°C)
											150
0.01	0.1	1	10	100	1000	25	50	75	100	125

Figure 5. Non repetitive surge peak	Figure 6. Non repetitive surge peak forward
forward current versus overload	current versus overload duration
duration

IM(A)

150

Maximum values, per diode (TO-220AB, D2PAK, I2PAK)

125
100
			TC=50°C
75
			TC=75°C
50
	IM		TC=125°C
25
	t
		t(s)
	δ=0.5
0
1.E-03	1.E-02	1.E-01	1.E+00

IM(A)

100		Maximum values, per diode (TO-220FPAB)
90
80
70
60			TC=50°C
50
40			TC=75°C
30
20	IM		TC=125°C
10	t	t(s)
	δ=0.5
0
1.E-03	1.E-02	1.E-01	1.E+00

Doc ID 7756 Rev 9

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