ST STPS20150C User Manual
STPS20150C
High voltage power Schottky rectifier
Features
■ HIgh junction temperature capability
■ Good trade off between leakage current and
forward voltage drop
■ Low leakage current
■ Avalanche capability specified
■ Insulated package TO-220FPAB:
– Insulating voltage = 2000 V
– Typical package capacitance 12 pF
Description
Dual center tap Schottky rectifier designed for
high frequency Switched Mode Power Supplies.
A1
A2
K
A2
A1
D2PAK
STPS20150CG
STPS20150CR
STPS20150CR-H
A2
K
A1
TO-220AB
STPS20150CT
STPS20150CFP
STPS20150CT-H
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j
(max) 0.75 V
V
F
K
K
K
A1
2
PAK
I
A1
TO-220FPAB
2 x 10 A
150 V
175 °C
A2
A2
K
January 2011 Doc ID 7756 Rev 9 1/10
www.st.com
10
Characteristics STPS20150C
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
P
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 150
RRM
Forward rms voltage 30
Average forward
current δ = 0.5
TO-220AB
2
PAK, D2PA K
I
TO-220FPAB Tc = 135 °C Per device 20
= 155 °C Per diode 10
T
c
Surge non repetitive forward current tp = 10 ms sinusoidal 180
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6700
ARM
Storage temperature range - 65 to + 150 °C
stg
Maximum operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
(1)
175 °C
Symbol Parameter Value Unit
TO-220AB, D
PAK, I2PA K
2.2
2
Per diod e
TO-220FPAB 4.5
R
th(j-c)
Junction to case
TO-220AB, D
2
PAK, I2PA K
1.3
To ta l
TO-220FPAB 3.5
V
A
A
A
W
°C/W
R
th(c)
Coupling
TO-220FPAB 2.5
When the diodes 1 and 2 are used simultaneously:
TO-220AB, D2PAK, I2PA K 0 .3
ΔT
(diode 1) = P(diode 1) x R
j
Table 4. Static electrical characteristics (per diode)
(Per diode) + P(diode 2) x R
th(j-l)
th(c)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
T
(1)
I
R
V
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
Reverse leakage current
(2)
Forward voltage drop
F
= 25 °C
j
= 125 °C 5.0 mA
T
j
= 25 °C
T
j
T
= 125 °C 0.69 0.75
j
T
= 25 °C
j
= 125 °C 0.79 0.86
T
j
= V
V
R
RRM
= 10 A
I
F
IF = 20 A
5.0 µA
0.92
1
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.011 I
F2(RMS)
V
2/10 Doc ID 7756 Rev 9
STPS20150C Characteristics
Figure 1. Average forward power
dissipation versus average
forward current (per diode)
P (W)
F(AV)
10
9
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
δ = 1
T
=tp/T
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1µs)
ARM
1
Figure 2. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I (A)
F(AV)
12
11
10
9
8
7
6
5
4
3
2
tp
1
0
0 25 50 75 100 125 150 175
δ
T
=tp/T
R =15°C/W
th(j-a)
tp
R =R (TO-220AB, I PAK and D PAK)
th(j-a) th(j-c)
R =R (TO-220FPAB)
th(j-a) th(j-c)
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
22
0.1
0.01
0.001
0.10.01 1
10 100
Figure 5. Non repetitive surge peak
forward current versus overload
duration
I (A)
M
150
125
100
75
50
IM
25
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
Maximum values, per diode (TO-220AB, D PAK,I PAK)
t
t(s)
22
T =50°C
C
T =75°C
C
T =125°C
C
t (µs)
p
1000
0.8
0.6
0.4
0.2
T (°C)
0
25 50 75 100 125
j
Figure 6. Non repetitive surge peak forward
current versus overload duration
I (A)
M
100
90
80
70
60
50
40
30
IM
20
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
Maximum values, per diode (TO-220FPAB)
T =50°C
C
T =75°C
C
T =125°C
C
t(s)
150
Doc ID 7756 Rev 9 3/10
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