Single Schottky rectifier suited for high frequency
Switch Mode Power Supply.
Packaged in TO-220AC, this device is intended to
be used in notebook & LCD adaptors, desktop
SMPS, providing in these applications a margin
between the remaining voltages applied on the
diode and the voltage capability of the diode.
STPS20120D
POWER SCHOTTKY RECTIFIER
A
K
TO-220AB
STPS20120D
Table 2: Order Code
Part NumberMarking
STPS20120DSTPS20120D
K
A
K
Table 3: Absolute Ratings (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
dPtot
* : thermal runaway condition for a diode on its own heatsink
------------- --
dTj
February 2004
Repetitive peak reverse voltage120V
RMS forward voltage30A
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range-65 to + 175°C
stg
Maximum operating junction temperature *175°C
j
1
--------------- ----------->
Rth j a
–()
δ = 0.5 T
t
= 10ms sinusoidal
p
t
= 1µs Tj = 25°C
p
REV. 1
= 130°C
c
200A
8600W
20A
1/6
STPS20120D
Table 4: Thermal Parameters
SymbolParameterValueUnit
R
th(j-c)
Junction to case
2.2
°C/W
Table 5: Static Electrical Characteristics
SymbolParameterTests conditionsMin.TypMax.Unit
= 25°C
T
I
*
R
V
F
Pulse test:* tp = 5 ms, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.56 x I
Reverse leakage current
**
Forward voltage drop
** tp = 380 µs,
δ < 2%
j
= 125°C
T
j
= 25°C
T
j
T
= 125°C
j
T
= 25°C
j
T
= 125°C
j
T
= 25°C
j
T
= 125°C
j
V
R
I
F
I
F
I
F
= V
= 5A
= 10A
= 20A
F(AV)
RRM
+ 0.010 I
310
0.540.58
0.620.66
0.720.76
F2(RMS)
20
0.7
0.8
0.93
µA
mA
V
2/6
STPS20120D
Figure 1: Average forward power dissipation
versus average forward current
P(W)
F(AV)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0246810 12 14 1618 20 22 2426
δ = 0.05
δ = 0.1
I(A)
F(AV)
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
p
101001000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
I(A)
F(AV)
22
20
18
16
14
12
10
8
6
4
2
0
0255075100125150175
δ
=tp/T
T
tp
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T(°C)
amb
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
255075100125150
T (°C)
j
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
I (A)
M
140
120
100
80
60
40
IM
20
0
1.E-031.E-021.E-011.E+00
δ=0.5
t
t(s)
T =25°C
c
T =75°C
c
T =125°C
c
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
Single pulse
0.1
0.0
1.E-031.E-021.E-011.E+00
t (s)
p
δ
=tp/T
T
tp
3/6
STPS20120D
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
I (mA)
R
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
010 2030 40 5060 7080 90 100 110 120
T =150°C
j
T =125°C
j
T =100°C
j
T =75°C
j
T =50°C
j
T =25°C
j
V (V)
R
Figure 9: Forward voltage drop versus forward
current
I (A)
FM
100
T =125°C
j
(maximum values)
T =125°C
j
(typical values)
10
T =25°C
j
(maximum values)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values)
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