ST STPS20120C User Manual

Features

■ High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and

forward voltage drop

STPS20120C

Power Schottky rectifier

Datasheet − production data

A1

K

A2

Description

Dual center tap Schottky rectifier suited for high frequency switch mode power supply.

Packaged in TO-220AB, TO-220AB narrow leads,

2

I

PAK and TO-220FPAB, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode.

K

A2

K

A1

TO-220AB

STPS20120CT

K

A2

A1

K

TO-220AB narrow leads

STPS20120CTN

Table 1. Device summary

I

2 x 10 A

F(AV)

V

120 V

RRM

T

j(max)

0.54 V

V

F(typ)

A2

K

A1

TO-220FPAB

STPS20120CFP

A2

K

A1

2

I

PAK

STPS20120CR

175 °C

June 2012 Doc ID 11212 Rev 3 1/10

This is information on a product in full production.

www.st.com

10

Characteristics STPS20120C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Repetitive peak reverse voltage 120 V

RMS forward current 30 A

Average forward current, δ = 0.5

TO-220AB, I2PAK, TO-220AB narrow

leads

TO-220FPAB

Tc = 150 °C

Tc = 145 °C 20

T

= 125 °C

c

T

= 100 °C 20

c

Per diode Per device

Surge non repetitive forward current tp = 10 ms Sinusoidal 150 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 4600 W

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

1

--------------------------

<

Rth j a–()

(1)

10

175 °C

Table 3. Thermal parameters

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Coupling

I2PAK, TO-220AB, TO-220AB narrow leads

TO-220FPAB

Per diode To ta l

I2PAK, TO-220AB TO-220AB narrow leads

To ta l

TO-220FPAB 3.5

3

1.8

5.5

4.5

0.6

°C/W

A

When the diodes 1 and 2 are used simultaneously: T

(diode 1) = P(diode 1) x R

j

2/10 Doc ID 11212 Rev 3

(per diode) + P(diode 2) x R

th(j-c)

th(c)

STPS20120C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs,

δ < 2%

Tj = 25 °C

VR = V

= 125 °C 1.5 5 mA

T

j

T

= 25 °C

j

= 125 °C 0.54 0.58

T

j

= 25 °C

T

j

Tj = 125 °C 0.7 0.74

T

= 25 °C

j

= 125 °C 0.81 0.86

T

j

RRM

= 2.5 A

I

F

= 10 A

I

F

IF = 20 A

10 µA

0.7

0.92

1.02

To evaluate the maximum conduction losses use the following equation: P = 0.62 x I

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

10

9

8

7

6

5

4

3

2

1

0

012345678910111213

δ = 0.05

δ = 0.1

Figure 3. Normalized avalanche power

derating versus pulse duration

F(AV)

δ = 0.2

I (A)

F(AV)

+ 0.012 I

δ = 0.5

F2(RMS)

δ = 1

T

=tp/T

δ

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

11

10

9

8

7

6

5

4

3

2

tp

1

=tp/T

δ

0

0 25 50 75 100 125 150 175

T

R =15°C/W

th(j-a)

tp

R=R

TO-220FPAB

T (°C)

amb

th(j-a) th(j-c)

TO-220AB

Figure 4. Normalized avalanche power

derating versus junction

I²PAK

temperature

P(t)

ARM p

P (1µs)

ARM

1

P (25°C)

1.2

P(t)

ARM p

ARM

V

0.01

0.001

1

0.1

t (µs)

p

0.10.01 1

10 100 1000

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Doc ID 11212 Rev 3 3/10