ST STPS200170TV1Y User Manual

STPS200170TV1Y

Automotive high voltage power Schottky rectifier

Features

■Negligible switching losses

■Avalanche rated

■Low leakage current

■Good trade-off between leakage current and forward voltage drop

■Insulated package:

–Electrical insulation = 2500 V rms,

–Capacitance = 45 pF

■AEC-Q101 qualified

Description

This high voltage Schottky rectifier is suitable for high frequency switch mode power supplies.

Packaged in ISOTOP, this device is intended for use in secondary rectification applications.

A1 K1

A2 K2

A2

K2

A1

K1

ISOTOP

Table 1.	Device summary
	IF(AV)		2 x 100 A
	VRRM		170 V
	Tj		150 °C
	VF (typ)		0.63 V

October 2011

Doc ID 17207 Rev 2

1/7

www.st.com

Characteristics	STPS200170TV1Y

1 Characteristics

Table 2. Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

200

A

IF(AV)

Average forward current, δ = 0.5

Tc = 105 °C per diode

100

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

700

A

PARM

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

100000

W

Tstg

Storage temperature range

-55 to + 150

°C

Tj

Maximum operating junction temperature(1)

150

°C

1.

dPtot

1

condition to avoid thermal runaway for a diode on its own heatsink

--------------

< -------------------------

dTj

Rth(j – a)

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

0.52

Total

0.31

°C/W

Rth(c)

Coupling thermal resistance

0.1

When the diodes are used simultaneously:

Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c)

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

-

200

µA

Tj = 125 °C

-

30

100

mA

Tj = 25 °C

IF = 100 A

-

-

0.85

VF(2)

Forward voltage drop

Tj = 150 °C

-

0.63

0.68

V

Tj = 25 °C

IF = 200 A

-

-

1.01

Tj = 150 °C

-

0.78

0.86

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.5 x IF(AV) + 0.0018 IF2(RMS)

2/7	Doc ID 17207 Rev 2

STPS200170TV1Y	Characteristics
Figure 1. Conduction losses versus average Figure 2.	Average forward current versus
current (per diode)	ambient temperature
	(δ = 0.5, per diode)

P	(W)
F(AV)
100
90		δ=0.05	δ=0.1	δ=0.2	δ=0.5	δ=1
80
70
60
50
40
30
20					T
10			IF(AV)(A)		δ=tp/T	tp
0
0	20	40	60	80	100	120

I	(A)
F(AV)

120

Rth(j-a)=Rth(j-c)

100

80

60

40
	T
20
	δ=tp/T	tp	Tamb(°C)
0
0	25	50	75	100	125	150

Figure 3. Non-repetitive surge peak forward	Figure 4. Relative variation of thermal
current vesus overload duration	impedance (junction to case) versus
(maximum values per diode)	pulse duration

I	(A)
M

800

700

600

500

400

300

200

IM

100

0

1.E-03

Z	/R
th(j-c)	th(j-c)

			1.0
			0.9
			0.8
			0.7
			0.6	δ=0.5
		TC=50°C	0.5
			0.4
		TC=75°C	0.3	δ=0.2
			0.2	δ=0.1					T
t	t(s)	TC=125°C	0.1		Single pulse		tP(s)	δ=tp/T	tp
d=0.5			0.0
1.E-02	1.E-01	1.E+00	1.E-04		1.E-03	1.E-02	1.E-01	1.E+00	1.E+01

Figure 5. Reverse leakage current versus	Figure 6. Junction capacitances versus
reverse voltage applied (typical	reverse voltage applied (typical
values per diode)	values per diode)

I	(mA)											C(pF)
R											10000
1.E+03
														F=1MHz
1.E+02							Tj=150°C							VOSC=30mVRMS
														Tj=25°C
1.E+01							Tj=125°C
1.E+00							Tj=100°C
							Tj=75°C				1000
1.E-01							Tj=50°C
1.E-02							Tj=25°C
1.E-03
1.E-04								VR(V)			100		VR(V)
0	10	20	30	40	50	60	70	80	90	100 110 120 130 140 150 160 170	1	10	100	1000

Doc ID 17207 Rev 2

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