ST STPS200170TV1 User Manual

Features

STPS200170TV1

High voltage power Schottky rectifier

■ Negligible switching losses

■ Avalanche rated

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Insulated package: ISOTOP

– Electrical insulation = 2500 V rms,

capacitance = 45 pF

Description

This high voltage Schottky rectifier is suited for high frequency switch mode power supplies.

Packaged in ISOTOP, this device is intended for use in the secondary rectification of applications.

A1 K1

A2 K2

A2

A1

K1

ISOTOP

Table 1. Device summary

I

F(AV)

V

RRM

T

j

(typ) 0.63 V

V

F

K2

2 x 100 A

170 V

150 °C

September 2011 Doc ID 11857 Rev 2 1/7

www.st.com

7

Characteristics STPS200170TV1

1 Characteristics

Table 2. Absolute ratings - limiting values per diode at T

= 25 °C, unless otherwise specified

amb

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Repetitive peak reverse voltage 170 V

Forward rms current 200 A

Average forward current, δ = 0.5 Tc = 105 °C per diode 100 A

Surge non repetitive forward current tp = 10 ms sinusoidal 700 A

= 1 µs, Tj = 25 °C

Repetitive peak avalanche power

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature

T

j

dP

tot

j

1

--------------------------< R

th j a–()

--------------dT

t

p

(1)

100000 W

150 °C

Table 3. Thermal parameters

Symbol Parameter Value Unit

Per diode 0.52

R

th(j-c)

th(c)

Junction to case

°C/WTo t al 0 . 31

Coupling thermal resistance 0.1

When the diodes are used simultaneously: T

j(diode1)

= P

(diode1)

X R

(per diode) + P

th(j-c)

(diode2)

X R

th(c)

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25 °C

T

j

= 125 °C - 30 100 mA

T

j

Tj = 25 °C

= 150 °C - 0.63 0.68

T

j

= 25 °C IF = 200 A - - 0.975

T

j

= 150 °C - 0.78 0.86

T

j

V

= V

R

I

= 100 A

F

RRM

--200µA

- - 0.85

To evaluate the conduction losses use the following equation: P = 0.5 x I

+ 0.0018 I

F(AV)

F2(RMS)

V

2/7 Doc ID 11857 Rev 2

STPS200170TV1 Characteristics

Figure 1. Conduction losses versus average

current (per diode)

P

(W)

F(AV)

100

90

80

70

60

50

40

30

20

10

0

0 20 40 60 80 100 120

δ=0.05

δ=0.1

I

F(AV)

δ=0.2

(A)

δ

δ=0.5

=t /T

p

δ=1

T

t

p

Figure 3. Non-repetitive surge peak forward

current vesus overload duration (maximum values per diode)

IM(A)

800

700

600

500

400

300

200

I

M

100

0

1.E-03 1.E-02 1.E-01 1.E+00

t

d

=0.5

t(s)

TC=50°C

TC=75°C

TC=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I

(A)

F(AV)

120

R

100

80

60

40

20

0

T

=tp/T

δ

0 25 50 75 100 125 150

th(j-a)=Rth(j-c)

tp

T

(°C)

amb

Figure 4. Relative variation of thermal

impedance (junction to case) versus pulse duration

Z

(j ) (j )

th -c/Rth -c

1.0

0.9

0.8

0.7

δ=0.5

0.6

0.5

0.4

δ=0.2

0.3

δ=0.1

0.2

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

Single pulse

tP(s)

δ

=tp/T

T

tp

Figure 5. Reverse leakage current versus

reverse voltage applied (typical values per diode)

IR(mA)

1.E+03

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)

Doc ID 11857 Rev 2 3/7

Figure 6. Junction capacitances versus

reverse voltage applied (typical values per diode)

C(pF)

10000

1000

100

1 10 100 1000

VR(V)

V

F=1MHz

OSC

Tj=25°C

=30mV

RMS