ST STPS1L60 User Manual

Features

STPS1L60

Power Schottky rectifier

■ Negligible switching losses

■ Low forward voltage drop

■ Surface mount miniature packages

■ Avalanche capability specified

Description

Axial and surface mount power Schottky rectifiers suited to switched mode power supplies and high frequency DC to DC converters.

Packaged in SMA, STmite flat and DO-41, this device is especially intended for use in low voltage, high frequency inverters and small battery chargers.

K

DO-41

STPS1L60

A

K

SMA

(JEDEC DO-214AC)

STPS1L60A

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(max) 0.56 V

V

F

A

K

STmite flat

(DO222-AA)

STPS1L60MF

1 A

60 V

October 2009 Doc ID 7504 Rev 8 1/10

www.st.com

10

Characteristics STPS1L60

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

Repetitive peak reverse voltage 60 V

RRM

STmite flat 2 A

I

F(RMS)

I

F(AV)

I

P

T

Forward rms current

SMA, DO-41 10 A

SMA T

Average forward current

STmite flat T

Surge non repetitive forward current tp =10 ms sinusoidal 40 A

FSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1200 W

ARM

Storage temperature range - 65 to + 150 °C

stg

T

Maximum operating junction temperature

j

= 130 °C δ = 0.5

L

= 120 °C δ = 0.5

L

= 135 °C δ = 0.5

C

(1)

1ADO-41 T

150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

SMA 120

R

Junction to ambient

th(j-a)

Lead length = 10 mm DO-41 100

°C/W

SMA 30

R

Table 4. Static electrical characteristics

Junction to lead

th(j-l)

Junction to case STmite flat 20 °C/W

th(j-c)

Lead length = 10 mm DO-41 45

°C/W

Symbol Parameter Tests conditions Min. Typ. Max. Unit

= 25 °C

T

(1)

I

Reverse leakage current

R

j

= 100 °C 1.5 5 mA

T

j

V

Tj = 25 °C

(1)

V

1. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

Tj = 100 °C 0.56

= 125 °C 0.5 0.54

T

j

T

= 25 °C

j

Tj = 100 °C 0.68

= 125 °C 0.6 0.66

T

j

I

To evaluate the conduction losses use the following equation: P = 0.44 x I

2/10 Doc ID 7504 Rev 8

F(AV)

+ 0.12 I

F2(RMS)

= V

R

= 1 A

F

= 2 A

F

50 µA

RRM

0.57

V

0.75

STPS1L60 Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P

(W)

F(AV)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I

F(AV)

(A)

δ = 0.2

δ = 0.5

δ = tp/T

δ = 1

T

t

p

Figure 3. Average forward current versus

ambient temperature (δ = 0.5) (DO-41)

I

(A)

F(AV)

1.2

1.0

0.8

R

th(j-a)

= R

th(j-l)

DO-41

Figure 2. Average forward current versus

ambient temperature (δ = 0.5) (SMA)

I

(A)

F(AV)

1.2

R

= R

th(j-a)

(°C)

th(j-l)

= 120 °C/W

1.0

0.8

0.6

T

R

amb

0.4

δ = tp/T

T

t

p

0.2

0.0 0 25 50 75 100 125 150

SMA

Figure 4. Average forward current versus

ambient temperature (δ = 0.5) (STmite flat)

I

(A)

F(AV)

1.2

1.0

0.8

R

th(j-a)

= R

th(j-c)

STmite flat

0.6

0.4

0.2

0.0 0 25 50 75 100 125 150

δ = tp/T

T

t

p

T

R

amb

th(j-a)

(°C)

= 100 °C/W

Figure 5. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

0.6

0.4

0.2

δ = tp/T

0.0 0 25 50 75 100 125 150

R

= 250 °C/W

T

th(j-a)

t

p

T

amb

(°C)

Figure 6. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Doc ID 7504 Rev 8 3/10