STPS1L40-Y
Automotive low drop power Schottky rectifier
Features
■Very small conduction losses
■Negligible switching losses
■Low forward voltage drop
■Surface mount miniature packages
■Avalanche capability specified
■AEC-Q101 qualified
■ECOPACK®2 compliant components
Description
Single chip Schottky rectifiers suited to switched mode power supplies and high frequency DC to DC converters.
Packaged in SMA and SMB this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection in automotive applications.
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K |
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K |
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SMA |
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SMB |
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(JEDEC DO-214AC) |
(JEDEC DO-214AA) |
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STPS1L40AY |
STPS1L40UY |
Table 1. |
Device summary |
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Value |
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IF(AV) |
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1 A |
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VRRM |
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40 V |
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Tj (max) |
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150 °C |
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VF(max) |
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0.42 V |
October 2011 |
Doc ID 18247 Rev 1 |
1/9 |
www.st.com
Characteristics |
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STPS1L40-Y |
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1 |
Characteristics |
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Table 2. |
Absolute ratings (limiting values) |
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Parameter |
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Value |
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VRRM |
Repetitive peak reverse voltage |
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40 |
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V |
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IF(RMS) |
Forward rms current |
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8 |
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A |
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IF(AV) |
Average forward current |
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TL = 130 °C δ = 0.5 |
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1 |
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A |
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IFSM |
Surge non repetitive forward current |
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tp = 10 ms sinusoidal |
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60 |
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A |
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IRRM |
Repetitive peak reverse current |
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tp = 2 µs |
F = 1 kHz square |
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1 |
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IRSM |
Non repetitive peak reverse current |
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tp = 100 µs square |
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1 |
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PARM |
Repetitive peak avalanche power |
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tp = 1 µs |
Tj = 25 °C |
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900 |
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W |
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Tstg |
Storage temperature range |
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- 65 to + 150 |
°C |
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Tj |
Operating junction temperature range(1) |
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-40 to + 150 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
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V/µs |
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1. |
dPtot < |
1 |
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condition to avoid thermal runaway for a diode on its own heatsink |
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Rth(j-a) |
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dTj |
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Table 3. |
Thermal resistance |
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Symbol |
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Parameter |
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Value |
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Rth(j-l) |
Junction to lead |
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SMA |
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30 |
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°C/W |
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SMB |
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Table 4. |
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Static electrical characteristics |
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Symbol |
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Parameter |
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Tests conditions |
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Min. |
Typ. |
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Max. |
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Unit |
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IR (1) |
Reverse leakage current |
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Tj = 25 °C |
VR = VRRM |
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35 |
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µA |
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Tj = 125 °C |
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6 |
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10 |
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mA |
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Tj = 25 °C |
IF = 1 A |
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0.5 |
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V |
(1) |
Forward voltage drop |
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Tj = 125 °C |
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0.37 |
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0.42 |
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V |
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F |
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Tj = 25 °C |
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0.63 |
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IF = 2 A |
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Tj = 125 °C |
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0.5 |
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0.61 |
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1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.23 x IF(AV) + 0.19 IF2(RMS)
2/9 |
Doc ID 18247 Rev 1 |
STPS1L40-Y |
Characteristics |
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Figure 1. Average forward power dissipation Figure 2. |
Average forward current versus |
versus average forward current |
ambient temperature (SMA, δ = 0.5) |
0.8 |
PF(AV)(W) |
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0.7 |
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δ |
= 0.1 |
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δ = |
0.2 |
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δ = 0.5 |
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δ = 1 |
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δ = 0.05 |
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0.6
0.5
0.4
0.3
0.2 |
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T |
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0.1 |
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IF(AV)(A) |
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δ = tp / T |
tp |
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0.0 |
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0.0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
IF(AV)(A) |
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1.2 |
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SMA |
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Rth(j-a) = Rth(j-l) |
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1.0 |
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0.8 |
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0.6 |
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Rth(j-a) = 120 °C/W |
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0.4 |
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0.2 |
T |
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δ = tp / T |
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p |
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T |
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(°C) |
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0.0 |
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amb |
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0 |
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75 |
100 |
125 |
150 |
Figure 3. Average forward current versus |
Figure 4. Normalized avalanche power |
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ambient temperature (SMB, δ = 0.5) |
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derating versus pulse duration |
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1.2 |
IF(AV)(A) |
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PARM(tp) |
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SMB |
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PARM(1 µs) |
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1.0 |
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Rth(j-a) = Rth(j-l) |
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1 |
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0.8 |
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0.1 |
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0.6 |
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Rth(j- |
a) = 100 °C/W |
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0.4 |
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0.01 |
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T |
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0.2 |
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0.0 |
δ = tp / T |
tp |
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Tamb(°C) |
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0.001 |
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tp(µs) |
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0 |
25 |
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75 |
100 |
125 |
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0.01 |
0.1 |
1 |
10 |
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1000 |
Figure 5. Normalized avalanche power |
Figure 6. Non repetitive surge peak forward |
derating versus junction |
current versus overload duration |
temperature |
(maximum values, SMA) |
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PARM(Tj) |
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IM(A) |
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PARM(25 °C) |
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7 |
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1.2 |
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6 |
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1 |
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5 |
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0.8 |
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4 |
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Ta = 25 °C |
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0.6 |
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3 |
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Ta = 75 °C |
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0.4 |
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2 |
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Ta = 125 °C |
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0.2 |
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IM |
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Tj(°C) |
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1 |
t |
t(s) |
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0 |
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δ = 0.5 |
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25 |
50 |
75 |
100 |
125 |
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1.E-04 |
1.E-03 |
1.E-02 |
1.E-01 |
1.E+00 |
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Doc ID 18247 Rev 1 |
3/9 |