Automotive low drop power Schottky rectifier
Features
■ Very small conduction losses
■ Negligible switching losses
■ Low forward voltage drop
■ Surface mount miniature packages
■ Avalanche capability specified
■ AEC-Q101 qualified
■ ECOPACK
Description
Single chip Schottky rectifiers suited to switched
mode power supplies and high frequency DC to
DC converters.
Packaged in SMA and SMB this device is
especially intended for surface mounting and
used in low voltage, high frequency inverters, free
wheeling and polarity protection in automotive
applications.
®
2 compliant components
STPS1L40-Y
A
K
SMA
(JEDEC DO-214AC)
STPS1L40AY
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 150 °C
T
j
(max) 0.42 V
V
F
(JEDEC DO-214AA)
A
K
SMB
STPS1L40UY
1 A
40 V
October 2011 Doc ID 18247 Rev 1 1/9
www.st.com
9
Characteristics STPS1L40-Y
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 40 V
RRM
Forward rms current 8 A
Average forward current TL = 130 °C δ = 0.5 1 A
Surge non repetitive forward current tp = 10 ms sinusoidal 60 A
FSM
Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A
RRM
Non repetitive peak reverse current tp = 100 µs square 1 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 900 W
ARM
Storage temperature range - 65 to + 150 °C
stg
Operating junction temperature range
T
j
(1)
-40 to + 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Symbol Parameter Value Unit
SMA 30
R
Table 4. Static electrical characteristics
th(j-l)
Junction to lead
SMB 25
°C/W
Symbol Parameter Tests conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
R
V
1. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
(1)
Forward voltage drop
F
j
T
= 125 °C - 6 10 mA
j
= 25 °C
T
j
T
= 125 °C - 0.37 0.42
j
T
= 25 °C
j
= 125 °C - 0.5 0.61
T
j
V
I
F
I
F
To evaluate the conduction losses use the following equation:
P = 0.23 x I
2/9 Doc ID 18247 Rev 1
F(AV)
+ 0.19 I
F2(RMS)
= V
R
= 1 A
= 2 A
- - 35 µA
RRM
--0.5
V
- - 0.63
STPS1L40-Y Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P
(W)
F(AV)
0.8
0.7
δ = 0.05
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
δ = 0.1
δ = 0.2
I
F(AV)
(A)
δ = 0.5
δ = 1
δ = tp/T
T
t
p
Figure 3. Average forward current versus
ambient temperature (SMB, δ = 0.5)
I
(A)
F(AV)
1.2
1.0
0.8
0.6
R
R
th(j-a)
th(j-a)
= R
th(j-l)
= 100 °C/W
SMB
Figure 2. Average forward current versus
ambient temperature (SMA, δ = 0.5)
I
(A)
F(AV)
1.2
R
= R
th(j-a)
1.0
0.8
0.6
0.4
0.2
0.0
T
δ = tp/T
0 25 50 75 100 125
t
p
R
th(j-a)
th(j-l)
= 120 °C/W
T
amb
SMA
(°C)
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
150
0.4
0.2
0.0
T
δ = tp/T
0 25 50 75 100 125 150
t
p
T
amb
(°C)
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, SMA)
IM(A)
7
6
5
4
3
2
I
M
1
0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
t
t(s)
SMA
Ta= 25 °C
Ta= 75 °C
Ta= 125 °C
Doc ID 18247 Rev 1 3/9