ST STPS1L40 User Manual

Features

■ Very small conduction losses

■ Negligible switching losses

■ Low forward voltage drop

■ Surface mount miniature packages

■ Avalanche capability specified

Description

STPS1L40

Low drop power Schottky rectifier

A

K

SMA

(JEDEC DO-214AC)

STPS1L40A

K

SMB

(JEDEC DO-214AA)

STPS1L40U

A

Single chip Schottky rectifiers suited to switched mode power supplies and high frequency DC to DC converters.

Packaged in SMA, SMB and STmite flat this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A

K

STmite flat

STPS1L40MF

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

(max) 0.42 V

V

F

1 A

40 V

June 2009 Doc ID 5507 Rev 6 1/11

www.st.com

11

Characteristics STPS1L40

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

Repetitive peak reverse voltage 40 V

RRM

SMA / SMB 8

I

F(RMS)

I

F(AV)

I

P

T

Forward rms current

STmite flat 2

Average forward current

SMA / SMB T

STmite flat T

Surge non repetitive forward current tp = 10 ms sinusoidal 60 A

FSM

Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A

RRM

Non repetitive peak reverse current tp = 100 µs square 1 A

RSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 900 W

ARM

Storage temperature range - 65 to + 150 °C

stg

Maximum operating junction temperature

T

j

= 130 °C δ = 0.5

L

= 135 °C δ = 0.5

C

(1)

1A

150 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

SMA 30

R

Table 4. Static electrical characteristics

th(j-l)

th(j-c)

Junction to lead

Junction to case

SMB 25

STmite flat 20

°C/W

A

Symbol Parameter Tests conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

Reverse leakage current

R

(1)

V

1. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

= 125 °C - 6 10 mA

T

j

= 25 °C

T

j

T

= 125 °C - 0.37 0.42

j

= 25 °C

T

j

T

= 125 °C - 0.5 0.61

j

V

I

F

I

F

To evaluate the conduction losses use the following equation: P = 0.23 x I

2/11 Doc ID 5507 Rev 6

F(AV)

+ 0.19 I

F2(RMS)

= V

R

= 1 A

= 2 A

- - 35 µA

RRM

--0.5

V

- - 0.63

STPS1L40 Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P

(W)

F(AV)

0.8

0.7

δ = 0.05

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

δ = 0.1

δ = 0.2

I

F(AV)

(A)

δ = 0.5

δ = 1

δ = tp/T

T

t

p

Figure 3. Average forward current versus

ambient temperature (SMB, δ = 0.5)

I

(A)

F(AV)

1.2

R

= R

th(j-a)

R

th(j-a)

th(j-l)

= 100 °C/W

T

1.0

0.8

0.6

0.4

0.2

0.0

T

δ = tp/T

0 25 50 75 100 125 150

t

p

amb

SMB

(°C)

Figure 2. Average forward current versus

ambient temperature (SMA, δ = 0.5)

I

(A)

F(AV)

1.2

R

= R

th(j-a)

1.0

0.8

0.6

0.4

0.2

0.0

T

δ = tp/T

0 25 50 75 100 125

t

p

R

th(j-a)

th(j-l)

= 120 °C/W

T

amb

SMA

(°C)

Figure 4. Average forward current versus

ambient temperature (STmite flat, δ = 0.5)

I

(A)

F(AV)

1.2

R

= R

th(j-a)

1.0

0.8

0.6

0.4

0.2

δ = tp/T

0.0

0 25 50 75 100 125

R

= 250 °C/W

th(j-a)

T

t

p

th(j-c)

T

amb

STmite flat

(°C)

150

Figure 5. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 6. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

Doc ID 5507 Rev 6 3/11

T (°C)

j

Characteristics STPS1L40

Figure 7. Non repetitive surge peak forward

current versus overload duration (maximum values, SMA)

IM(A)

7

6

5

4

3

2

I

M

1

0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

t(s)

SMA

Ta= 25 °C

Ta= 75 °C

Ta= 125 °C

Figure 9. Non repetitive surge peak forward

current versus overload duration (maximum values, STmite flat)

IM(A)

16

14

12

10

8

6

4

I

M

2

0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

t(s)

STmite flat

Tc= 25 °C

Tc= 75 °C

Tc= 125 °C

Figure 8. Non repetitive surge peak forward

current versus overload duration (maximum values, SMB)

IM(A)

7

6

5

4

3

2

I

M

1

0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

δ

= 0.5

t

SMB

Ta= 25 °C

Ta= 75 °C

Ta= 125 °C

Figure 10. Relative variation of thermal

impedance junction to ambient versus pulse duration (SMA)

Z

th(j-a)/Rth(j-a)

1.0 SMA

0.9

Epoxy printed circuit board,

0.8

copper thickness = 35 µm, recommended pad layout

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 11. Relative variation of thermal

Figure 12. Relative variation of thermal impedance junction to ambient versus pulse duration (SMB)

Z

th(j-a)/Rth(j-a)

1.0 SMB

0.9

Epoxy printed circuit board,

0.8

copper thickness = 35 µm, recommended pad layout

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

4/11 Doc ID 5507 Rev 6

Z

th(j-a)/Rth(j-a)

1.0

STmite flat

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

impedance junction to ambient versus pulse duration (STmite flat)

Epoxy printed circuit board, copper thickness = 35 µm, recommended pad layout

Single pulse

tp(s)