ST STPS1L30MF User Manual
Low drop power Schottky rectifier in flat package
Main product characteristics
I
F(AV)
V
RRM
T
(max) 150° C
j
V
(max) 0.39 V
F
Features and benefits
1 A
30 V
STPS1L30MF
A
K
STmite flat
(DO222-AA)
■ Very low profile package: 0.85 mm
■ Backward compatible with standard STmite
footprint
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
and extended battery life
■ Low thermal resistance
■ Avalanche capability specified
Description
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite flat, this device is intended
for use in very low voltage, high frequency
inverters, free wheeling and polarity protection
applications. Due to the very small size of the
package this device fits battery powered
equipment (cellular, notebook, PDA’s, printers) as
well as chargers and PCMCIA cards.
Order Code
Part number Marking
STPS1L30MF F1L3
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
dV/dt Critical rate of rise of reverse voltage (rated V
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Repetitive peak reverse voltage 30 V
RMS forward voltage 2 A
Average forward current Tc = 140° C δ = 0.5 1 A
Surge non repetitive forward current tp = 10 ms sinusoidal 50 A
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 1200 W
Storage temperature range -65 to + 150 °C
Maximum operating junction temperature
j
1
------------------ --------
<
Rth j a–()
(1)
, Tj = 25° C) 10000 V/µs
R
150 °C
August 2006 Rev 1 1/7
www.st.com
Characteristics STPS1L30MF
1 Characteristics
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
1. Mounted with minimum recommended pad size, PC board FR4
Table 3. Static electrical characteristics
Junction to case 20 °C/W
(1)
Junction to ambient 250 °C/W
Symbol Parameter Tests conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: = 380 µs, δ < 2%
Reverse leakage current
(1)
Forward voltage drop
F
Tj = 25° C
= V
V
R
V
R
V
R
= 1 A
I
F
I
= 2 A
F
= 3 A
I
F
RRM
= 20 V
= 10 V
T
= 85° C 5.25 16.5
j
T
= 25° C
j
= 85° C 3.5 10.5
T
j
T
= 25° C
j
T
= 85° C 2.4 7
j
= 25° C
T
j
T
= 85° C 0.28 0.34
j
T
= 25° C
j
= 85° C 0.36 0.42
T
j
T
= 25° C
j
T
= 85° C 0.43 0.51
j
Tj = 25° C
= 4 A
I
T
= 85° C 0.50 0.60
j
F
0.13 0.39
0.05 0.24
0.03 0.15
0.33 0.39
0.39 0.45
0.45 0.53
0.50 0.60
mA
V
To evaluate the conduction losses use the following equation: P = 0.26 x I
2/7
F(AV)
+ 0.08 I
F2(RMS)
STPS1L30MF Characteristics
Figure 1. Conduction losses versus average
current
P (W)
F(AV)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
R =270°C/W
th(j-a)
T (°C)
amb
R=R
th(j-a) th(j-c)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values)
I (A)
M
22
20
18
16
14
12
10
8
6
IM
4
2
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-04 1.E-03 1.E-02 1.E-01
t (s)
p
3/7
δ
=tp/T
T
tp
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