ST STPS1L30M User Manual
®
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
V
T
j
V
F
F(AV)
RRM
(max)
(max)
1 A
30 V
150°C
0.38 V
STPS1L30M
A
C
FEATURES AND BENEFITS
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low forward voltage drop for higher efficiency
STmite
(DO216-AA)
and extented battery life
■ Low thermal resistance
■ Avalanche capability specified
DESCRIPTION
Table 2: Order Code
Part Number Marking
STPS1L30M 1L3
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
dV/dt
dPtot
* : thermal runaway condition for a diode on its own heatsink
------------- --
dTj
Repetitive peak reverse voltage 30 V
RMS forward voltage 2 A
T
Average forward current
= 140°C δ = 0.5
c
Surge non repetitive forward current 10 ms sinusoidal 50 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 1200 W
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature * 150 °C
j
Critical rate of rise of reverse voltage (rated V
1
--------------- ----------->
Rth j a
–()
, Tj = 25°C)
R
10000 V/µs
1A
September 2004
REV. 3
1/6
STPS1L30M
Table 4: Thermal Resistance
Symbol Parameter Value Unit
*
R
th(j-c)
R
th(j-l)
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
V
Junction to case 20 °C/W
* Junction to ambient
*
Reverse leakage current
*
Forward voltage drop
F
T
= 25°C
j
T
= 85°C
j
T
= 25°C VR = 20V
j
T
= 85°C
j
= 25°C VR = 10V
T
j
= 85°C
T
j
= 25°C
T
j
T
= 85°C
j
= 25°C
T
j
T
= 85°C
j
V
R
I
F
I
F
= V
= 1A
= 3A
RRM
250
0.13 0.39
5.25 16.5
0.05 0.24
3.5 10.5
0.03 0.15
2.4 7
0.33 0.39
0.28 0.34
0.45 0.53
0.43 0.51
°C/W
mA
V
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.34 x I
Figure 1: Conduction losses versus average
current
P (W)
F(AV)
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
+ 0.07 I
F(AV)
F2(RMS)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
R =270°C/W
th(j-a)
T (°C)
amb
R=R
th(j-a) th(j-c)
2/6
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