ST STPS1L30 User Manual

®

LOW DROP POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

I

F(AV)

V

RRM

T

(max) 150°C

j

(max) 0.3 V

V

F

1 A

30 V

STPS1L30

FEATURES AND BENEFITS

■ Very low forward voltage drop for less power

dissipation

■ Optimized conduction/reverse losses trade-off

(JEDEC DO-214AC)

SMA

STPS1L30A

SMB

(JEDEC DO-214AA)

STPS1L30U

which means the highest yield in the
applications

■ Surface mount miniature packages

■ Avalanche capability specified

DESCRIPTION

Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con­verters, freewheel diode and integrated circuit

Table 2: Order Codes

Part Number Marking

STPS1L30A GB3
STPS1L30U G23

latch up protection.
Packaged in SMA and SMB, this device is espe­cially intended for use in parallel with MOSFETs in
synchronous rectification.

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

T

Repetitive peak reverse voltage 30 V

RMS forward voltage 10 A

T

Average forward current

= 135°C δ = 0.5

L

Surge non repetitive forward current tp = 10ms sinusoidal 75 A

Repetitive peak reverse current tp = 2µs F = 1kHz square 1 A

Non repetitive peak reverse current tp = 100µs square 1 A

Repetitive peak avalanche power tp = 1µs Tj = 25°C 1500 W

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature * 150 °C

j

1A

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

* : thermal runaway condition for a diode on its own heatsink

------------- --

dTj

1

--------------- ----------->

Rth j a

–()

August 2004

REV. 6

1/7

STPS1L30

Table 4: Thermal Resistance

Symbol Parameter Value Unit

R

th(j-l)

Junction to lead

Table 5: Static Electrical Characteristics

Symbol Parameter Tests conditions Min. Typ Max. Unit

T

= 25°C

IR *

V

Reverse leakage current

*

Forward voltage drop

F

Pulse test: * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.225 x I

j

T

= 100°C

j

= 25°C

T

j

= 125°C

T

j

= 25°C

T

j

= 125°C

T

j

V

R

I

F

I

F

= V

= 1A

= 2A

SMA 30

SMB 25

RRM

+ 0.075 I

F(AV)

F2(RMS)

°C/W

200

615

0.395

0.26 0.3

0.445

0.325 0.375

µA

mA

V

Figure 1: Average forward power dissipation
versus average forward current

P (W)

F(AV)

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

0.0 0.2 0.4 0.6 0.8 1.0 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

δ = 1

=tp/T

T

tp

Figure 3: Normalized avalanche power
derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2: Average forward current versus
ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

R=R

1.0

0.8

0.6

0.4

0.2

0.0

T

tp

=tp/T

δ

0 25 50 75 100 125 150

R =120°C/W

T (°C)

amb

th(j-a)

R =100°C/W

th(j-a) th(j-I)

th(j-a)

Figure 4: Normalized avalanche power
derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

2/7

STPS1L30

Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)

I (A)

M

10

8

T =25°C

6

4

2

0

1E-3

I

M

t

δ

=0.5

1E-2 1E-1

t(s)

a

T =50°C

a

T =100°C

a

1E+0

Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)

Z/R

th(j-c) th(j-c)

1.0

Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)

I (A)

M

10

8

T =25°C

6

4

IM

2

0

1E-3

δ=0.5

t

1E-2 1E-1 1E+0

t(s)

a

T =50°C

a

T =100°C

a

Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMB)

Z/R

th(j-c) th(j-c)

1.0

0.8

0.6

δ = 0.5

0.4

δ

=tp/T

T

tp

δ = 0.2

0.2

δ = 0.1

Single pulse

0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

t (s)

p

Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)

I (mA)

R

1E+2

1E+1

1E+0

1E-1

1E-2

1E-3

0 5 10 15 20 25 30

T =150°C

j

T =125°C

j

T =100°C

j

T =25°C

j

V (V)

R

0.8

0.6

= 0.5

δ

0.4

δ

=tp/T

T

tp

= 0.2

δ

0.2

= 0.1

δ

Single pulse

0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

t (s)

p

Figure 10: Junction capacitance versus
reverse voltage applied (typical values)

C(pF)

500

100

V (V)

10

12 5102030

R

F=1MHz
T =25°C

j

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