® |
STPS1L20M |
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV) |
1 A |
VRRM |
20 V |
Tj (max) |
150°C |
VF(max) |
0.37 V |
FEATURES AND BENEFITS
■Very small conduction losses
■Negligible switching losses
■Extremely fast switching
■Low forward voltage drop for higher efficiency and extented battery life
■Low thermal resistance
■Avalanche capability specified
DESCRIPTION
A
C
STmite
(DO216-AA)
Table 2: Order Code
Part Number |
Marking |
STPS1L20M |
1L2 |
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Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.
Packaged in STmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA’s, printers) as well chargers and PCMCIA cards.
Table 3: Absolute Ratings (limiting values)
Symbol |
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Parameter |
Value |
Unit |
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VRRM |
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Repetitive peak reverse voltage |
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20 |
V |
IF(RMS) |
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RMS forward voltage |
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2 |
A |
IF(AV) |
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Average forward current |
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Tc = 140°C δ = 0.5 |
1 |
A |
IFSM |
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Surge non repetitive forward current |
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tp = 10 ms sinusoidal |
50 |
A |
PARM |
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Repetitive peak avalanche power |
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tp = 1µs Tj = 25°C |
1400 |
W |
Tstg |
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Storage temperature range |
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-65 to + 150 |
°C |
Tj |
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Maximum operating junction temperature * |
150 |
°C |
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dV/dt |
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Critical rate of rise of reverse voltage |
(rated VR, Tj = 25°C) |
10000 |
V/µs |
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dPtot |
1 |
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* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth(j – a) |
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November 2005 |
REV. 4 |
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1/6 |
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STPS1L20M
Table 4: Thermal Resistance
Symbol |
Parameter |
Value |
Unit |
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Rth(j-c) |
Junction to case |
20 |
°C/W |
Rth(j-l)* |
Junction to ambient |
250 |
°C/W |
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Symbol |
Parameter |
Tests conditions |
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Min. |
Typ |
Max. |
Unit |
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Tj = 25°C |
VR = VRRM |
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0.015 |
0.075 |
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Tj = 85°C |
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0.9 |
4.5 |
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IR * |
Reverse leakage current |
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Tj = 25°C |
VR = 10V |
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0.005 |
0.035 |
mA |
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Tj = 85°C |
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0.45 |
2.5 |
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Tj = 25°C |
VR = 5V |
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0.003 |
0.025 |
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Tj = 85°C |
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0.3 |
1.6 |
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Tj = 25°C |
IF = 1A |
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0.38 |
0.43 |
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VF * |
Forward voltage drop |
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Tj = 85°C |
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0.32 |
0.37 |
V |
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Tj = 25°C |
IF = 3A |
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0.46 |
0.53 |
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Tj = 85°C |
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0.42 |
0.49 |
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Pulse test: |
* tp = 380 µs, δ < 2% |
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2 |
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To evaluate the conduction losses use the following equation: P = 0.31 x I |
+ 0.06 I |
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F(AV) |
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F (RMS) |
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Figure 1: Conduction losses versus average current
PF(AV)(W)
0.50 |
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δ = 0.2 |
δ = 0.5 |
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0.45 |
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δ = 0.1 |
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0.40 |
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δ = 0.05 |
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0.35 |
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δ = 1 |
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0.30 |
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0.25 |
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0.20 |
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0.15 |
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0.10 |
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T |
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0.05 |
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IF(AV)(A) |
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δ=tp/T |
tp |
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0.00 |
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0.0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
0.8 |
0.9 |
1.0 |
1.1 |
1.2 |
Figure 2: Average forward current versus ambient temperature (δ = 0.5)
IF(AV)(A) |
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1.1 |
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Rth(j-a)=Rth(j-c) |
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1.0 |
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0.9 |
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0.8 |
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0.7 |
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0.6 |
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Rth(j-a)=270°C/W |
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0.5 |
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0.4 |
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0.3 |
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0.2 |
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0.1 |
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Tamb(°C) |
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0.0 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
2/6