ST STPS1H100-Y User Manual

Features

STPS1H100-Y

Automotive high voltage power Schottky rectifier

■ Negligible switching losses

■ High junction temperature capability

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Avalanche capability specified

■ ECOPACK

■ AEC-Q101 qualified

®

2 compliant component

Description

Schottky rectifiers packaged in SMA or SMB, and designed for high frequency miniature switched mode power supplies as DC/DC converters for automotive applications.

A

K

SMA

(JEDEC DO-214AC)

(JEDEC DO-214AA)

STPS1H100AY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(max) 0.62 V

V

F

A

K

SMB

STPS1H100UY

1 A

100 V

December 2010 Doc ID 17935 Rev 1 1/9

www.st.com

9

Characteristics STPS1H100-Y

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

Repetitive peak reverse voltage 100 V

RRM

Forward rms voltage 10 A

Average forward current TL = 160 °C δ = 0.5 1 A

Surge non repetitive forward current tp =10 ms sinusoidal 50 A

FSM

Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A

RRM

Non repetitive peak reverse current tp = 100 µs square 1 A

RSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1500 W

ARM

Storage temperature range - 65 to + 175 °C

stg

Operating junction temperature

T

j

(1)

- 40 to + 175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

Symbol Parameter Value Unit

SMA 30

R

th(j-l)

Junction to lead

SMB 25

°C/W

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(2)

Forward voltage drop

F

j

T

= 125 °C 0.2 0.5 mA

j

= 25 °C

T

j

T

= 125 °C 0.58 0.62

j

T

= 25 °C

j

= 125 °C 0.65 0.7

T

j

V

R

I

F

I

F

To evaluate the conduction losses use the following equation:

P = 0.54 x I

2/9 Doc ID 17935 Rev 1

F(AV)

+ 0.08 I

F2(RMS)

= V

= 1 A

= 2 A

4µA

RRM

0.77

V

0.86

STPS1H100-Y Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1µs)

ARM

1

0.1

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

R

1.0

0.8

0.6

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

T

=tp/T

R

=120°C/W

th(j-a)

R

=100°C/W

th(j-a)

R

=200°C/W

th(j-a)

tp

T (°C)

amb

th(j-a)=Rth(j-l)

SMB

SMA

Figure 4. Normalized avalanche power

derating versus junction temperature

P(T)

ARM j

P (25 °C)

ARM

1.2

1

0.8

0.01

t (µs)

0.001

0.10.01 1

10 100

p

1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values) (SMB)

I (A)

M

10

SMB

9

8

7

6

5

4

3

2

I

M

1

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Ta=25 °C

Ta=75 °C

Ta=110 °C

0.6

0.4

0.2

T (°C)

0

25 50 75 100 125

j

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values) (SMA)

I (A)

M

8

SMA

7

6

5

4

3

2

I

M

1

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Ta=25 °C

Ta=75 °C

Ta=110 °C

150

Doc ID 17935 Rev 1 3/9