ST STPS1H100MF User Manual

Features

■ Negligible switching losses

■ High junction temperature capability

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ Avalanche capability specified

Description

Schottky rectifier designed for high frequency miniature switch mode power supplies such as adaptors and on-board DC/DC convertors. This device is packaged in STmite flat.

STPS1H100MF

High voltage power Schottky rectifier

A

K

STmite flat

(DO222-AA)

Table 1. Device summary

I

F(AV)

V

RRM

(max) 175 °C

T

j

V

(max) 0.62 V

F

1 A

100 V

May 2008 Rev 1 1/7

www.st.com

Characteristics STPS1H100MF

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

Repetitive peak reverse voltage 100 V

Forward current rms 2 A

Average forward current Tc = 160 °C δ = 0.5 1 A

Surge non repetitive forward current tp = 10 ms sinusoidal 50 A

Repetitive peak reverse current tp = 2 µs, F = I kHz square 1 A

Non-repetitive peak reverse current tp = 100 µs square 1 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1500 W

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

j

(1)

175 °C

dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25 °C) 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

1

--------------------------

<

Rth j a–()

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 20 °C/W

Symbol Parameter Tests conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: = 5 ms, δ < 2%

2. Pulse test: = 380 µs, δ < 2%

Reverse leakage current

(2)

Forward voltage drop

F

Tj = 25 °C

VR = V

= 1 A

I

F

I

= 2 A

F

RRM

= 125 °C 0.2 0.5

T

j

= 25 °C

T

j

T

= 125 °C 0.58 0.62

j

= 25 °C

T

j

= 125 °C 0.65 0.7

T

j

4µA

0.77

0.86

mA

V

To evaluate the conduction losses use the following equation: P = 0.54 x I

2/7

F(AV)

+ 0.08 I

F2(RMS)

STPS1H100MF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

δ=0.05

δ=0.1

I (A)

F(AV)

δ=0.2

δ

=tp/T

δ=0.5

δ=1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

1.2

R

=250°C/W

T (°C)

amb

th(j-a)=Rth(j-c)

1.0

0.8

0.6

R

0.4

0.2

0.0

0 25 50 75 100 125 150 175

δ

T

=tp/T

th(j-a)

tp

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)

M

22

20

18

16

14

12

10

8

6

I

M

4

2

0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Tc=25 °C

Tc=75 °C

Tc=125 °C

Figure 6. Forward voltage drop versus

forward current

I (A)

FM

20.0

18.0

16.0

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

3/7

Tj=125 °C

(Maximum values)

Tj=125 °C

(Typical values)

Tj=25 °C

(Maximum values)

V (V)

FM