ST STPS1H100 User Manual

STPS1H100

High voltage power Schottky rectifier

Features

■Negligible switching losses

■High junction temperature capability

■Low leakage current

■Good trade-off between leakage current and forward voltage drop

■Avalanche capability specified

■ECOPACK2® halogen-free component (SMAflat)

Description

Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptators and on board DC/DC converters.

Packaged in SMA, SMAflat or SMB.

A

A

K K

	SMA	SMB
(JEDEC DO-214AC)		(JEDEC DO-214AA)
STPS1H100A		STPS1H100U
		A
	K
	SMAflat
	(JEDEC DO-221AC)
	STPS1H100AF
Table 1.	Device summary
	IF(AV)	1 A
	VRRM	100 V
	Tj (max)	175 °C
	VF(max)	0.62 V

September 2008

Rev 6

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www.st.com

Characteristics

STPS1H100

1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

RMS forward voltage

10

A

IF(AV)

Average forward current

TL = 160 °C δ = 0.5

1

A

IFSM

Surge non repetitive forward current

tp =10 ms sinusoidal

50

A

IRRM

Repetitive peak reverse current

tp = 2 µs F = 1 kHz square

1

A

IRSM

Non repetitive peak reverse current

tp = 100 µs square

1

A

PARM

Repetitive peak avalanche power

tp = 1 µs

Tj = 25 °C

1500

W

Tstg

Storage temperature range

-65 to + 175

°C

T

Maximum operating junction temperature (1)

175

°C

j

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

1.

dPtot

1

condition to avoid thermal runaway for a diode on its own heatsink

---------------

-------------------------

dTj < Rth(j – a)

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

SMA

30

Rth(j-l)

Junction to lead

SMB

25

°C/W

SMAflat

25

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

(1)

Reverse leakage current

Tj = 25 °C

V

= V

4

µA

R

R

Tj = 125 °C

RRM

0.2

0.5

mA

Tj = 25 °C

IF = 1 A

0.77

VF(2)

Forward voltage drop

Tj = 125 °C

0.58

0.62

V

Tj = 25 °C

IF = 2 A

0.86

Tj = 125 °C

0.65

0.7

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.54 x I

+ 0.08 I 2

F(AV)

F (RMS)

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STPS1H100	Characteristics
Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current	ambient temperature (δ = 0.5)

PF(AV)(W)

0.8

δ = 0.1		δ = 0.2		δ = 0.5

0.7

δ = 0.05

0.6

δ = 1

0.5

0.4

0.3

T

0.2

0.1
								IF(AV)(A)										=tp/T									tp
0.0																	δ
0.0		0.1	0.2	0.3	0.4	0.5			0.6		0.7			0.8	0.9		1.0					1.1					1.2

IF(AV)(A)

1.2
1.0	Rth(j-a)=Rth(j-l)
	Rth(j-a)=120°C/W
	SMB / SMAflat
0.8	Rth(j-a)=100°C/W

SMA

0.6Rth(j-a)=200°C/W

0.4
	T
0.2
δ=tp/T	tp	Tamb(°C)

0.0

0

25

50

75

100

125

150

175

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)							PARM(Tj)
PARM(1µs)						PARM(25°C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
			tp(µs)						Tj(°C)
0.001						0
0.01	0.1	1	10	100	1000	25	50	75	100	125	150

Figure 5. Non repetitive surge peak forward Figure 6.	Non repetitive surge peak forward
current versus overload duration	current versus overload duration
(maximum values) (SMB)	(maximum values) (SMA)

IM(A)
10
SMB
9
8
7
6			Ta=25 °C
5
4			Ta=75 °C
3			Ta=110 °C
2
IM
1	t	t(s)
	δ =0.5
0
1.E-03	1.E-02	1.E-01	1.E+00

IM(A)
8
SMA
7
6
5			Ta=25 °C
4			Ta=75 °C
3			Ta=110 °C
2
IM
1	t	t(s)
0	δ =0.5
1.E-03	1.E-02	1.E-01	1.E+00

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