Features
STPS1H100
High voltage power Schottky rectifier
■ Negligible switching losses
■ High junction temperature capability
■ Low leakage current
■ Good trade-off between leakage current and
forward voltage drop
■ Avalanche capability specified
■ ECOPACK2
®
halogen-free component
(SMAflat)
Description
Schottky rectifiers designed for high frequency
miniature switched mode power supplies such as
adaptators and on board DC/DC converters.
Packaged in SMA, SMAflat or SMB.
A
K
SMA
(JEDEC DO-214AC)
(JEDEC DO-214AA)
STPS1H100A
A
K
SMAflat
(JEDEC DO-221AC)
STPS1H100AF
Table 1. Device summary
I
F(AV)
V
RRM
Tj (max) 175 °C
A
K
SMB
STPS1H100U
1 A
100 V
V
(max) 0.62 V
F
September 2008 Rev 6 1/10
www.st.com
10
Characteristics STPS1H100
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
Repetitive peak reverse voltage 100 V
RMS forward voltage 10 A
Average forward current TL = 160 °C δ = 0.5 1 A
Surge non repetitive forward current tp =10 ms sinusoidal 50 A
Repetitive peak reverse current tp = 2 µs F = 1 kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 1500 W
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
(1)
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
1
------------------ --------
<
Rth j a–()
Symbol Parameter Value Unit
SMA 30
R
th(j-l)
Junction to lead
°C/WSMB 25
SMAflat 25
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25 °C
T
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
j
T
= 125 °C 0.2 0.5 mA
j
T
= 25 °C
j
= 125 °C 0.58 0.62
T
j
T
= 25 °C
j
T
= 125 °C 0.65 0.7
j
To evaluate the conduction losses use the following equation:
P = 0.54 x I
2/10
F(AV)
+ 0.08 I
F2(RMS)
V
R
= 1 A
I
F
= 2 A
I
F
= V
4µA
RRM
0.77
V
0.86
STPS1H100 Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I(A)
F(AV)
1.2
R
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175
δ
T
=tp/T
R
=120°C/W
th(j-a)
R
=100°C/W
th(j-a)
R
=200°C/W
th(j-a)
tp
T (°C)
amb
th(j-a)=Rth(j-l)
SMB / SMAflat
SMA
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
I (A)
M
10
SMB
9
8
7
6
5
4
3
2
I
M
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
Ta=25 °C
Ta=75 °C
Ta=110 °C
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
I (A)
M
8
SMA
7
6
5
4
3
2
I
M
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
3/10
Ta=25 °C
Ta=75 °C
Ta=110 °C
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