ST STPS16H100CG, STPS16H100CFP, STPS16H100CR User Manual

STPS16H100C

®

STPS16H100CT/CG/CFP/CR

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

IF(AV)

2 x 8 A

VRRM

100 V

Tj (max)

175 °C

VF (max)

0.64 V

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier designed for high frequency miniature Switch Mode Power Supplies such as adaptators and on board DC/DC converters.

ABSOLUTE RATINGS (limiting values, per diode)

A1

K

A2

K

 

A2

A2

A1

 

A1K

D2PAK

 

TO-220AB

STPS16H100CG

 

STPS16H100CT

 

A2

A2

K

K

A1

A1

TO-220FPAB I2PAK STPS16H100CFP STPS16H100CR

Symbol

 

 

 

 

Parameter

 

 

Value

Unit

 

 

 

 

 

 

 

 

 

 

VRRM

 

Repetitive peak reverse voltage

 

 

100

V

IF(RMS)

 

RMS forward current

 

 

30

A

 

IF(AV)

 

Average forward

 

TO-220AB

Tc = 165°C

Per diode

8

A

 

 

 

 

current δ = 0.5

 

D2PAK / I2PAK

 

 

 

 

 

 

 

 

 

 

 

TO-220FPAB

Tc = 150°C

Per device

16

 

 

 

 

 

 

 

 

 

 

 

 

IFSM

 

Surge non repetitive forward current

tp = 10 ms sinusoidal

200

A

 

IRRM

 

Repetitive peak reverse current

tp = 2 µs square F = 1kHz

1

A

 

IRSM

 

Non repetitive peak reverse current

tp = 100 µs square

2

A

PARM

 

Repetitive peak avalanche power

tp = 1µs Tj = 25°C

8700

W

 

Tstg

 

Storage temperature range

 

 

- 65 to + 175

°C

 

Tj

 

Maximum operating junction temperature *

 

175

°C

dV/dt

 

Critical rate of rise of reverse voltage

 

 

10000

V/µs

* :

dPtot

<

 

1

thermal

runaway condition for a diode on its own heatsink

 

 

 

dTj

Rth( j a)

 

 

 

 

 

 

 

July 2003 - Ed: 2A

1/7

 

STPS16H100CT/CG/CFP/CR

THERMAL RESISTANCES

Symbol

 

Parameter

 

Value

Unit

 

 

 

 

 

 

Rth (j-c)

Junction to ambient

TO-220AB / D2PAK / I2PAK

Per diode

1.6

°C/W

 

 

TO-220FPAB

 

4

 

 

 

 

 

 

 

 

 

TO-220AB / D2PAK / I2PAK

Total

1.1

°C/W

 

 

TO-220FPAB

 

3.5

 

 

 

 

 

 

 

Rth (c)

 

TO-220AB / D2PAK / I2PAK

Coupling

0.6

°C/W

 

 

TO-220FPAB

 

3

 

 

 

 

 

 

 

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage Current

Tj = 25°C

V R = VRRM

 

 

3.6

µA

 

 

Tj = 125°C

 

 

 

1.6

5

mA

VF**

Forward Voltage drop

Tj = 25°C

I F =

8 A

 

 

0.77

V

 

 

Tj = 125°C

IF =

8 A

 

0.59

0.64

 

 

 

Tj = 25°C

I F =

16 A

 

 

0.88

 

 

 

Tj = 125°C

I F =

16 A

 

0.67

0.73

 

Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.55 x IF(AV) + 0.011 x IF2(RMS)

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient temperature (δ=0.5).

PF(AV)(W)

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

 

 

 

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

δ = 1

 

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

1

 

 

 

 

IF(AV)(A)

 

 

 

 

 

 

 

 

 

 

δ=tp/T

tp

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

1

2

3

4

5

6

7

8

9

10

2/7

 

 

 

 

 

 

 

 

 

 

IF(AV)(A)

9

Rth(j-a)=Rth(j-c)

 

TO-220AB/D²PAK/I²PAK

 

8

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

4

 

 

 

Rth(j-a)=50°C/W

 

 

 

 

3

 

 

 

 

 

 

 

 

2

 

T

 

 

 

 

 

 

1

 

 

 

Tamb(°C)

 

 

 

 

δ=tp/T

 

tp

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

175

ST STPS16H100CG, STPS16H100CFP, STPS16H100CR User Manual

STPS16H100CT/CG/CFP/CR

Fig. 3: Normalized avalanche power derating versus pulse duration.

PARM(tp)

 

 

 

 

PARM(1µs)

 

 

 

 

1

 

 

 

 

 

0.1

 

 

 

 

 

0.01

 

 

 

 

 

0.001

 

 

tp(µs)

 

 

 

 

 

 

 

0.01

0.1

1

10

100

1000

Fig. 4: Normalized avalanche power derating versus junction temperature.

 

PARM(tp)

 

 

 

 

 

PARM(25°C)

 

 

 

 

 

1.2

 

 

 

 

 

 

1

 

 

 

 

 

 

0.8

 

 

 

 

 

 

0.6

 

 

 

 

 

 

0.4

 

 

 

 

 

 

0.2

 

 

 

 

 

 

0

 

 

Tj(°C)

 

 

 

 

 

 

 

 

 

0

25

50

75

100

125

150

Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AB, D²PAK, I²PAK).

200

IM(A)

 

 

 

 

 

 

 

180

 

 

 

 

160

 

 

 

 

140

 

 

 

 

120

 

 

 

TC=25°C

100

 

 

 

TC=75°C

 

 

 

 

80

 

 

 

 

60

 

 

 

TC=125°C

40

IM

 

 

 

 

 

 

 

20

 

t

t(s)

 

 

 

δ=0.5

 

0

 

 

 

 

 

 

 

1.E-03

1.E-02

1.E-01

1.E+00

Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220FPAB).

120

IM(A)

 

 

 

 

 

 

 

110

 

 

 

 

100

 

 

 

 

90

 

 

 

 

80

 

 

 

TC=25°C

70

 

 

 

 

 

 

 

60

 

 

 

TC=75°C

50

 

 

 

 

40

 

 

 

TC=125°C

30

 

 

 

 

20

IM

 

 

 

10

t

 

t(s)

 

0

δ=0.5

 

 

 

 

 

 

 

1.E-03

1.E-02

1.E-01

1.E+00

Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AB, D²PAK & I²PAK).

Zth(j-c) / Rth(j-c)

1.0

 

 

 

 

 

0.9

 

 

 

 

 

0.8

 

 

 

 

 

0.7

 

 

 

 

 

0.6

δ = 0.5

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

0.4

δ = 0.2

 

 

 

 

0.3

δ = 0.1

 

 

 

 

0.2

 

 

 

 

T

 

 

 

 

 

0.1

Single pulse

 

 

 

 

 

 

tP(s)

δ=tp/T

tp

 

 

 

0.0

 

 

 

 

 

 

 

 

1.E-03

1.E-02

 

1.E-01

1.E+00

Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAB).

Zth(j-c) / Rth(j-c)

1.0

 

 

 

 

 

0.9

 

 

 

 

 

0.8

 

 

 

 

 

0.7

 

 

 

 

 

0.6

δ = 0.5

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

0.4

 

 

 

 

 

0.3

δ = 0.2

 

 

 

 

 

 

 

 

 

0.2

δ = 0.1

 

 

 

T

 

 

 

 

 

0.1

Single pulse

 

tP(s)

δ=tp/T

tp

 

 

 

 

 

0.0

 

 

 

 

 

 

 

 

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

 

 

 

 

 

3/7

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