ST STPS16170C User Manual

STPS16170C

High voltage power Schottky rectifier

Main product characteristics

IF(AV)	2 x 8 A
VRRM	170 V
Tj	175° C
VF (typ)	0.70 V

Features and benefits

■High junction temperature capability

■Good trade-off between leakage current and forward voltage drop

■Low leakage current

■Avalanche capability specified

Description

Dual centre tab Schottky rectifier designed for high frequency switch mode power supplies.

A1

K

A2

A2	A2
A1 K	A1 K
TO-220AB	I2PAK
STPS16170CT	STPS16170CR
K	K
A2	A2
A1	A1
DPAK	D2PAK
STPS16170CB	STPS16170CG

Order codes

Part Number	Marking
STPS16170CT	STPS16170CT
STPS16170CG	STPS16170CG
STPS16170CG-TR	STPS16170CG
STPS16170CR	STPS16170CR
STPS16170CB-TR	PS16170CB
STPS16170CB	PS16170CB

July 2006

Rev 1

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www.st.com

Characteristics	STPS16170C

1 Characteristics

Table 1. Absolute ratings (limiting values per diode, Tamb = 25° C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

RMS forward current

20

A

IF(AV)

Average forward current, δ = 0.5

Tc = 150° C

Per diode

8

A

Total package

16

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

75

A

P

Releative peak avalanche power

T

j

= 25° C

tp = 1µs

4700

W

ARM

Tstg

Storage temperature range

-65 to + 175

°C

T

Maximum operating junction temperature(1)

175

°C

j

dV/dt

Critical rate of rise of reverse voltage

10 000

V/µs

1.

dPtot

1

thermal runaway condition for a diode on its own heatsink

-------------- < -------------------------

dTj

Rth(j – a)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

3

Total

1.8

°C/W

Rth(c)

Coupling

0.6

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

15

µA

Tj = 125° C

15

mA

Tj = 25° C

IF = 8 A

0.92

VF(2)

Forward voltage drop

Tj = 125° C

0.70

0.75

V

Tj = 25° C

IF = 16 A

1

Tj = 125° C

0.8

0.86

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.014 x IF2(RMS)

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STPS16170C	Characteristics
Figure 1. Conduction losses versus average Figure 2.	Average forward current versus
forward current (per diode)	ambient temperature (δ = 0.5, per
	diode)

P	(W)
F(AV)

8

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

7

6

5

4

3

2		T
1	δ=tp/T	tp
IF(AV)(A)

0

0

1

2

3

4

5

6

7

8

9

10

IF(av)(A)

	9					Rth(j-a)=Rth(j-c)
	8
	7
	6
	5			Rth(j-a)=15°C/W
	4
	3	T
	2
	1	δ=tp/T	tp	Tamb(°C)
	0
		25	50	75	100	125	150	175
	0

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)							PARM(tp)
PARM(1µs)						PARM(25°C)
1
						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
			tp(µs)			0			Tj(°C)
0.001
0.01	0.1	1	10	100	1000	25	50	75	100	125	150

Figure 5. Non repetitive surge peak forward Figure 6.	Relative variation of thermal
current versus overload duration	impedance junction to case versus
(maximum values, per diode)	pulse duration

I	(A)				Z	/R
M					th(j-c)	th(j-c)
120					1.0
					Single pulse
					TO-220AB
100						DPAK
						I²PAK
						D²PAK
80
60				TC=50°C
40				TC=75°C
20		IM		TC=125°C
		t	t(s)
0		δ =0.5					tp(s)
					0.1
1.E-03		1.E-02	1.E-01	1.E+00	1.E-03	1.E-02	1.E-01	1.E+00

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