ST STPS16170C User Manual
STPS16170C
High voltage power Schottky rectifier
Main product characteristics
I
F(AV)
V
RRM
T
j
(typ) 0.70 V
V
F
2 x 8 A
170 V
175° C
Features and benefits
■ High junction temperature capability
■ Good trade-off between leakage current and
forward voltage drop
■ Low leakage current
■ Avalanche capability specified
Description
Dual centre tab Schottky rectifier designed for
high frequency switch mode power supplies.
A1
A2
A2
K
A1
TO-220AB
STPS16170CT
K
A2
A1
DPAK
STPS16170CB
K
A2
K
A1
2
I
PAK
STPS16170CR
K
A2
A1
D2PAK
STPS16170CG
Order codes
Part Number Marking
STPS16170CT STPS16170CT
STPS16170CG STPS16170CG
STPS16170CG-TR STPS16170CG
STPS16170CR STPS16170CR
STPS16170CB-TR PS16170CB
STPS16170CB PS16170CB
July 2006 Rev 1 1/10
www.st.com
Characteristics STPS16170C
1 Characteristics
Table 1. Absolute ratings (limiting values per diode, T
= 25° C unless otherwise specified)
amb
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
Repetitive peak reverse voltage 170 V
RMS forward current 20 A
Average forward current, δ = 0.5 Tc = 150° C Per diode 8
I
F(AV)
I
FSM
P
ARM
T
Total package
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Releative peak avalanche power Tj = 25° C
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
(1)
tp = 1µs
16
4700 W
175 °C
dV/dt Critical rate of rise of reverse voltage 10 000 V/µs
dP
1. thermal runaway condition for a diode on its own heatsink
tot
j
1
--------------------------<
R
th j a–()
--------------dT
Table 2. Thermal parameters
Symbol Parameter Value Unit
Per diode 3
R
th(j-c)
R
th(c)
Table 3. Static electrical characteristics
Junction to case
°C/WTo ta l 1 .8
Coupling 0.6
A
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
Tj = 25° C
VR = V
= 8 A
I
F
= 16 A
I
F
RRM
= 125° C 15 mA
T
j
= 25° C
T
j
T
= 125° C 0.70 0.75
j
= 25° C
T
j
Tj = 125° C 0.8 0.86
15 µA
0.92
1
To evaluate the conduction losses use the following equation:
P = 0.64 x I
2/10
+ 0.014 x I
F(AV)
F2(RMS)
V
STPS16170C Characteristics
Figure 1. Conduction losses versus average
forward current (per diode)
P
(W)
F(AV)
8
7
6
5
4
3
2
1
0
012345678910
δ=0.05
I
F(AV)
δ=0.2
δ=0.1
(A)
δ=0.5
δ
=tp/T
δ=1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM
p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per
diode)
I (A)
F(av)
9
8
Rth(j-a)=Rth(j-c)
7
6
5
Rth(j-a)=15°C/W
4
3
2
1
0
T
T
(°C)
δ
=tp/T
tp
amb
0 25 50 75 100 125 150 175
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM
p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
IM(A)
120
100
80
60
40
I
M
20
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ
=0.5
t(s)
TC=50°C
TC=75°C
TC=125°C
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
TO-220AB
DPAK
I²PAK
D²PAK
0.1
1.E-03 1.E-02 1.E-01 1.E+00
3/10
tp(s)
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