®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
STPS160H100TV
I
F(AV)
V
RRM
2x80A
100 V
Tj (max) 150 °C
V
(max) 0.68V
F
FEATURES AND BENEFITS
NEGLIGIBLE SWITCHING LOSSES
n
HIGH JUNCTION TEMPERATURE CAPABILITY
n
LOW LEAKAGE CURRENT
n
GOOD TRADE OFF BETWEEN LEAKAGE
n
CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
n
LOW INDUCTION PACKAGE
n
n
INSULATED PACKAGE:
Insulating Voltage = 2500 V
(RMS)
Capacitance = 45 pF
n
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
High voltage dual Schottky rectifier designed
for high frequency telecom and computer
Switched Mode Power Supplies and other
power converters.
K2K1A2
A1
ISOTOP
TM
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particularly, in high frequency circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Repetitive peak reverse voltage 100 V
RMS forward current 180 A
Average forward current Tc = 110°C
δ = 0.5
Per diode
Per device
80
160
Surge non repetitive forward current tp = 10 ms sinusoidal 1000 A
Repetitive peak reverse current tp=2µssquare F = 1kHz 2 A
Non repetitive peak reverse current tp = 100 µs square 10 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 78400 W
Storage temperature range -55 to+150 °C
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 3A
thermal runaway condition for a diode on its own heatsink
−1()
A
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STPS160H100TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
I
R
V
F
Junction to case Per leg 0.9 °C/W
Total 0.5 °C/W
0.14 °C/W
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage Current Tj = 25°CV
th(c)
R=VRRM
Coupling
Tj = 125°C1350mA
** Forward Voltage drop Tj = 25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
= 60 A 0.75 V
F
= 60 A 0.59 0.63
F
= 80 A 0.80
F
= 80 A 0.63 0.68
F
= 120 A 0.87
F
= 120 A 0.69 0.74
F
= 160 A 0.92
F
= 160 A 0.75 0.80
F
40 µA
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.56xI
F(AV)
+ 0.0015 x I
F2(RMS)
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