ST STPS16045TV User Manual
®
MAIN PRODUCT CHARACTERISTIC S
STPS16045TV
POWER SCHO TTKY REC TIFIER
I
F(AV)
V
RRM
2 x 80 A
45 V
Tj (max) 150 °C
(max) 0.69 V
V
F
FEATURES AND BENE FITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSE S
EXTREMELY FAST SWITCHING
LOW THERMAL RE SISTA NCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
(RMS )
Capacitance = 45 pF
DESCRIPTION
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS
(limiting values, per diode)
A2K2
A1K1
ISOTOP
TM
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
Repetitive peak reverse voltage 45 V
RMS forward current 125 A
Average forward current Tc = 75°C
δ
= 0.5
Per diode
Per device
80
160
Surge non repetitive forward current tp = 10 ms sinusoidal 900 A
Repetitive peak reverse current tp = 2 µs square
2A
F = 1kHz
I
RSM
T
stg
Non repetitive peak reverse current tp = 100 µs square 5 A
Storage temperature range - 55 to + 150
°
Tj Maximum operating junction temperature * 150 ° C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
ISOTOP is a trademark of STMicroelectronics
June 1999 - Ed: 3A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
C
1/4
STPS16045TV
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case Per diode 1
When the diodes 1 and 2 are used simultan eously :
∆ Tj(diode 1) = P(diode) x R
(Per diode) + P(diode 2) x R
th(j-c)
Total 0.55
Coupling 0.1
th(c)
°
C/W
STATIC ELECTRICAL CHARACTE RISTICS
(per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
1mA
Tj = 125°C 43 150
* Forward voltage drop Tj = 125°CI
V
F
Tj = 25°CI
Tj = 125°CI
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the fo llowing eq uation :
P = 0.48 x I
Fig. 1:
+ 0.00262 x I
F(AV)
F2(RMS)
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
80
70
60
50
40
30
20
10
0
δ = 0.05
0 102030405060708090100
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
= 80 A 0.62 0.69 V
F
= 160 A 0.95
F
= 160 A 0.8 0.90
F
Fig. 2:
Average current versus case temperature
(δ = 0.5, per diode).
IF(av)(A)
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150
δ
=tp/T
Rth(j-a)=Rth(j-c)
T
tp
Rth(j-a)=5°C/W
Tamb(°C)
2/4
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