ST STP7NK30Z, STF7NK30Z User Manual
查询STF7NK30Z供应商
N-CHANNEL 300V - 0.80Ω - 5A T O-220/TO-220FP
STP7NK30Z
STF7NK30Z
Zener-Protected SuperMESH™Power MOSF ET
TYPE V
STP7NK30Z
STF7NK30Z
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING
300 V
300 V
(on) = 0.80 Ω
DS
DSS
R
DS(on)
<0.9Ω
<0.9Ω5A5A
I
D
Pw
50 W
20 W
REPEATIBILITY
DESCRIPTION
The SuperM ESH™ s eries is obtained t hrough an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pus hing
on-resistance significantly down,specialcareis taken to ensure a ver y good dv/dt capab ility for the
most dem anding applications. Such series c omplements ST full range of high voltage MOSFETs including revolutionary MDm es h™ products.
TO-220 TO-220FP
1
INTERNAL SCHEMATIC DIAGRAM
3
2
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LIGHTING
ORDER CODES
PART NUMBER MARKING PACKAGE PACKAGING
STP7NK30Z P7NK30Z TO-220 TUBE
STF7NK30Z F7NK30Z TO-220FP TUBE
1/10March 2004
STP7NK30Z - STF7NK30Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP7NK30Z STF7NK30Z
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
≤5.7A, di/dt ≤200A/µs, VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
300 V
300 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC=25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 20 20 (*) A
Total Dissipation at TC=25°C
55(*)A
3.2 3.2 (*) A
50 20 W
Derating Factor 0.4 0.16 W/°C
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2800 V
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj
≤ T
JMAX.
-55to150
-55to150
°C
°C
THERMAL DATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 2.50 6.25 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
=25°C, ID=IAR,VDD=50V)
j
5A
130 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD c apability, but also to make them safely absorb pos sible voltage transients that may occasionally be
applied from gate to source. In this r es pec t the Zener v oltage is appropriate to achieve an efficient and
cost-effective intervention to prote ct the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10
STP7NK30Z - S TF7N K30Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=1 mA, VGS= 0 300 V
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
=MaxRating
DS
=MaxRating,TC= 125 °C
V
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 50µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 2.5 A 0.80 0.90 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(1) Forward Transconductance VDS=15 V,ID= 2.5 A 2.5 S
fs
C
oss eq.
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
=25V,f=1MHz,VGS= 0 380
V
DS
74
15
VGS=0V,VDS= 0V to 400V 30 pF
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=200V,ID=4.5A
R
=4.7Ω VGS=10V
G
(Resistive Load see, Figure 3)
=320V,ID=5A,
V
DD
V
=10V
GS
11
25
13
4.5
7.6
17 nC
µA
µA
pF
pF
pF
ns
ns
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
FallTime
VDD=200V,ID=1.5A
R
=4.7Ω VGS=10V
G
20
10
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
=320V,ID=5A,
Off-voltage Rise Time
f
c
FallTime
Cross-over Time
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Loadsee,Figure5)
8.5
8.5
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
ForwardOnVoltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=5A,VGS=0
I
SD
V
DD
(see test circuit, Figure 5)
= 5 A, di/dt = 100A/µs
=40,Tj= 150°C
154
716
9.3
when VDSincreases from 0 to 80%
oss
5
20
1.6 V
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/10
Loading...