®
N - CHANNEL 100V - 0.3 Ω - 7A - TO-220
TYPE V
DSS
STP7NE10 100 V < 0.4 Ω 7 A
■
TYPICAL R
■
EXCEPTIONAL dv/dt CAPABILITY
■
AVALANCHE RUGG ED TECHNOLO GY
■
100 % AVALANCHE TESTED
■
APPLICATION ORIENTED
DS(on)
= 0.3
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
■
DC-DC & DC-AC CONVERTERS
■
SYNCHRONOU S RECTIFICAT ION
Ω
R
DS(on)
I
D
STP7NE10
STripFET POWER MOSFET
PRELIMINARY DATA
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD ≤7 A, di/dt ≤ 200 A/µs, VDD ≤ V
October 1999
Drain-source Voltage (VGS = 0) 100 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Current (continuous) at Tc = 25 oC7A
D
I
Drain Current (continuous) at Tc = 100 oC 4.9 A
D
100 V
(•) Drain Current (pulsed) 28 A
Total Dissipation at Tc = 25 oC45W
tot
Derating Factor 0.3 W/
) Peak Diode Recovery voltage slope 6 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 175
j
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/5
STP7NE10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 30 V)
3.33
100
1.5
275
7A
40 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
100 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 100 oC
DS
V
= ± 20 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
V
= 10 V ID = 3.5 A 0.32 0.4 Ω
GS
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
7A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID =2.5 A 2.5 S
= 0 305
GS
45
21
µA
µA
pF
pF
pF
2/5
®
STP7NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
= 50 V ID = 3.5 A
DD
= 4.7 Ω VGS = 5 V
R
G
6.5
15
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 80 V ID = 5 A V
DD
= 5 V 14
GS
6
4
18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(Voff)
t
t
r(Voff)
t
t
Turn-off Delay Time
Fall Time
f
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 50 V ID = 3.5A
DD
= 4.7 Ω VGS = 10 V
R
G
V
=80V ID=7A
DD
= 4.7 Ω VGS = 10 V
R
G
25
7
7
8
16
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
7
28
(pulsed)
(∗) Forward On Voltage ISD = 8 A VGS = 0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 5 A di/dt = 100 A/µs
SD
V
= 50 V Tj = 150 oC
DD
75
210
Charge
Reverse Recovery
5.5
Current
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µ
A
C
®
3/5
E
STP7NE10
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
4/5
A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
®
STP7NE10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical compon ents i n life sup port devices or systems with o ut exp r ess writt e n ap proval o f STM i cr oel ectronics.
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®
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5/5
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