ST STP7NC80Z, STP7NC80ZFP, STB7NC80Z, STB7NC80Z-1 User Manual
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STP7NC80Z - STP7NC80ZFP
STB7NC80Z - STB7NC80Z-1
N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE V
STP7NC80Z
STP7NC80ZFP
STB7NC80Z
STB7NC80Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt AND CAPABILITY
(on) = 1.3Ω
DS
DSS
800 V
800 V
800 V
800 V
R
DS(on)
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
< 1.5 Ω
I
D
6.5 A
6.5 A
6.5 A
6.5 A
GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ V ER Y LOW GATE INPUT RE SISTANCE
■ GAT E CHARGE MINIMIZED
DESCRIPTION
The t hird generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unitarea while in tegrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as reques ted by a large v ariety of single-switch applications.
APPLICATIONS
■ S INGLE -ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
3
1
D2PAK
TO-220 TO-220FP
3
2
1
I2PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP7NC80Z P7NC80Z TO-220 TUBE
STP7NC80ZFP P7NC80ZFP TO-220FP TUBE
STB7NC80ZT4 B7NC80Z
STB7NC80Z-1 B7NC80Z
2
PAK
D
2
I
PAK
TAPE&REEL
TUBE
1/13May 2003
STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
V
DS
V
DGR
V
GS
I
D
I
D
IDM()
P
TOT
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ±25 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
6.5 6.5 (*) A
4 4(*) A
Drain Current (pulsed) 26 26 (*) A
Total Dissipation at TC= 25°C
135 40 W
Derating Factor 1.08 0.32 W/°C
I
GS
V
ESD(G-S)
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3KV
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
() Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature -65 to 150 °C
Max.Operating Junction Temperature 150 °C
STP7NC80ZFP
800 V
800 V
THERMAL DATA
2
2
I
PAK
PAK /
TO-220FP
TO-220 / D
Rthj-case Thermal Resistance Junction-case Max 0.93 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
6.5 A
290 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3)
I
Rz Dynamic Resistance
=20mA,
D
1.3
90 Ω
10
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes hav e s pec if ically been des igned to enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possibl e voltage transients tha t may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’ s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
STP7NC80Z - STP7NC 80Z FP - STB7NC80Z - STB7NC80Z-1
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID= 250 µA, VGS= 0 800 V
Breakdown Voltage
∆BV
/∆TJBreakdown Voltage Temp.
DSS
ID=1mA,VGS= 0 0.9 V/°C
Coefficient
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
V
= Max Rating
DS
V
= Max Rating, TC= 125 °C
DS
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 250µA
345V
1
50
VGS=10V,ID= 3.3 A 1.3 1.5 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
6S
ID= 3.3 A
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
=25V,f=1MHz,VGS= 0 2350
V
DS
164
17
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
Rise Time
VDD=400V,ID=3A
= 4.7Ω VGS=10V
R
G
( see test circuit, Figure 3)
=640V,ID=6A,
g
gs
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
VGS=10V
33
12
43
12
15
58
µA
µA
pF
pF
pF
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 640 V, ID=6 A,
t
r(Voff)
t
t
f
c
Fall Time
Cross-over Time
Off-voltage Rise Time
V
DD
RG=4.7Ω, VGS= 10V
(see test circuit, Figure 5)
13
13
20
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
Source-drain Current
(2)
Source-drain Current (pulsed)
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=αT(25°-T) BV
BV
GSO
(25°)
ISD=6.1 A, VGS=0
I
SD
VDD=40V,Tj= 150°C
(see test circuit, Figure 5)
= 6 A, di/dt = 100A/µs
680
6
18
6.5
26
1.6 V
ns
ns
ns
A
A
ns
µC
A
3/13
STP7NC80Z - STP7NC80ZF P - STB7NC80Z - STB 7NC80Z-1
Safe Operating Area For TO-220/I 2PAK Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For T O-220FP
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
4/13
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