ST STP7NC70Z, STP7NC70ZFP, STB7NC70Z, STB7NC70Z-1 User Manual
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STP7NC70Z - STP7NC70ZFP
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
STB7NC70Z - STB7NC70Z-1
TYPE V
DSS
R
DS(on)
I
D
STP7NC70Z/FP 700V < 1.38Ω 6A
STB7NC70Z/-1 700V < 1.38Ω 6A
■ TYPICAL R
■ EXTREMELYHIGHdv/dtAND CAPABILITYGATE
(on) = 1.1Ω
DS
TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per uni t area w hile integrating bac k-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
3
1
D2PAK
3
2
1
I2PAK
(Tabless TO-220)
TO-220FP
1
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)7NC70Z(-1) STP7NC70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
700 V
700 V
Gate- source Voltage ± 25 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
(1)
Drain Current (pulsed) 24 24 A
Total Dissipation at TC= 25°C
6 6(*) A
3.7 3.7(*) A
125 40 W
Derating Factor 1 0.32 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
j
(1)ISD≤6A, di/dt≤100A/µs, VDD≤ V
(2).Limited only by maximum temperature allowed
(BR)DSS,Tj≤TJMAX
1/13May 2003
STP7NC70Z - STP7NC70ZF P - STB7NC70Z - ST B 7NC70Z-1
THERMAL DATA
TO-220 / D2PAK /
2
PAK
I
TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Maximum Lead Temperature For Soldering Purpose 300 °C
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
6A
238 mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE S PECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
∆BV
(BR)DSS
Drain-source
Breakdown Voltage
/∆TJBreakdown Voltage Temp.
DSS
Coefficient
I
DSS
Zero Gate Voltage
Drain Current (V
I
GSS
Gate-body Leakage
Current (V
DS
=0)
GS
=0)
ID= 250 µA, VGS= 0 700 V
ID=1mA,VGS= 0 0.8 V/°C
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±10 µA
GS
1µA
50 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID= 3.5 A
= 250µA
345V
1.1 1.38 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 140 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID= 3.5A
V
=25V,f=1MHz,VGS=0
DS
7S
1840 pF
18 pF
2/13
STP7NC70Z - STP7NC 70Z FP - STB7NC70Z - STB7NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge 11 nC
Gate-Drain Charge 19 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 10 ns
Cross-over Time 19 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Source-drain Current 6 A
(2)
Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.8 µC
Reverse Recovery Current 20 A
VDD=350V,ID= 3.5 A
= 4.7Ω VGS=10V
R
G
(see test circuit, Figure 3)
V
=560V,ID= 7A,
DD
V
=10V
GS
V
= 560V, ID=7A,
DD
=4.7Ω, VGS= 10V
R
G
(see test circuit, Figure 5)
ISD= 6 A, VGS=0
I
= 7A, di/dt = 100A/µs,
SD
V
=50V,Tj= 150°C
DD
(see test circuit, Figure 5)
24 ns
8ns
47 66 nC
11 ns
1.6 V
575 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
I
Rz Dynamic Resistance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
= αT(25°-T)BV
BV
GSO
(25°)
=50mA,VGS=0
D
90 Ω
10
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The bui lt-in back-to-back Zener diodes have specificall y been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applie d from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/13
STP7NC70Z - STP7NC70ZF P - STB7NC70Z - ST B 7NC70Z-1
Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/I2PAK
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
4/13
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