ST STP7NC70Z, STP7NC70ZFP, STB7NC70Z, STB7NC70Z-1 User Manual

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STP7NC70Z - STP7NC70ZFP

N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK

Zener-Protected PowerMESH™III MOSFET

STB7NC70Z - STB7NC70Z-1

TYPE V

DSS

R

DS(on)

I

D

STP7NC70Z/FP 700V < 1.38Ω 6A
STB7NC70Z/-1 700V < 1.38Ω 6A

■ TYPICAL R

■ EXTREMELYHIGHdv/dtAND CAPABILITYGATE

(on) = 1.1Ω

DS

TO - SOURCE ZENER DIODES

■ 100% AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per uni t area w hile integrating bac k-to­back Zener diodes between gate and source. Such ar­rangement gives extra ESD capability with higher rug­gedness performance as requested by a large variety
of single-switch applications.

APPLICATIONS

■ SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

■ WELDING EQUIPMENT

TO-220

3

1

D2PAK

3

2

1

I2PAK

(Tabless TO-220)

TO-220FP

1

3

2

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP(B)7NC70Z(-1) STP7NC70ZFP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

I

GS

V

ESD(G-S)

dv/dt Peak Diode Recovery voltage slope 3 V/ns

V

ISO

T

stg

T

(•)Pulse width limited by safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

700 V

700 V
Gate- source Voltage ± 25 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

(1)

Drain Current (pulsed) 24 24 A
Total Dissipation at TC= 25°C

6 6(*) A

3.7 3.7(*) A

125 40 W
Derating Factor 1 0.32 W/°C
Gate-source Current ±50 mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV

Insulation Withstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD≤6A, di/dt≤100A/µs, VDD≤ V
(2).Limited only by maximum temperature allowed

(BR)DSS,Tj≤TJMAX

1/13May 2003

STP7NC70Z - STP7NC70ZF P - STB7NC70Z - ST B 7NC70Z-1

THERMAL DATA

TO-220 / D2PAK /

2

PAK

I

TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

Maximum Lead Temperature For Soldering Purpose 300 °C

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

E

AS

Single Pulse Avalanche Energy
(starting T

max)

j

= 25 °C, ID=IAR,VDD=50V)

j

6A

238 mJ

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE S PECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

∆BV

(BR)DSS

Drain-source
Breakdown Voltage

/∆TJBreakdown Voltage Temp.

DSS

Coefficient

I

DSS

Zero Gate Voltage
Drain Current (V

I

GSS

Gate-body Leakage
Current (V

DS

=0)

GS

=0)

ID= 250 µA, VGS= 0 700 V

ID=1mA,VGS= 0 0.8 V/°C

V

= Max Rating

DS

= Max Rating, TC= 125 °C

V

DS

V

= ±20V ±10 µA

GS

1µA

50 µA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

DS=VGS,ID

VGS=10V,ID= 3.5 A

= 250µA

345V

1.1 1.38 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(1)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 140 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID= 3.5A

V

=25V,f=1MHz,VGS=0

DS

7S

1840 pF

18 pF

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STP7NC70Z - STP7NC 70Z FP - STB7NC70Z - STB7NC70Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

g

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge 11 nC
Gate-Drain Charge 19 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 10 ns
Cross-over Time 19 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

Source-drain Current 6 A

(2)

Source-drain Current (pulsed) 24 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 5.8 µC
Reverse Recovery Current 20 A

VDD=350V,ID= 3.5 A

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)
V

=560V,ID= 7A,

DD

V

=10V

GS

V

= 560V, ID=7A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD= 6 A, VGS=0
I

= 7A, di/dt = 100A/µs,

SD

V

=50V,Tj= 150°C

DD

(see test circuit, Figure 5)

24 ns

8ns

47 66 nC

11 ns

1.6 V

575 ns

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 25 V

Voltage

αT Voltage Thermal Coefficient T=25°C Note(3) 1.3

I

Rz Dynamic Resistance

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆V

= αT(25°-T)BV

BV

GSO

(25°)

=50mA,VGS=0

D

90 Ω

10

-4

/°C

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The bui lt-in back-to-back Zener diodes have specificall y been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applie d from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.

3/13

STP7NC70Z - STP7NC70ZF P - STB7NC70Z - ST B 7NC70Z-1

Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D2PAK/I2PAK

Output Characteristics

Thermal Impedance For TO-220FP

Transfer Characteristics

4/13