ST STP6NK60Z, STP6NK60ZFP, STB6NK60Z, STB6NK60Z-1 User Manual
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STP6NK60Z - STP6NK60ZFP
STB6NK60Z - STB6NK60Z-1
N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE V
STP6NK60Z
STP6NK60ZFP
STB6NK60Z
STB6NK60Z-1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GO OD MANUFACTURING
600 V
600 V
600 V
600 V
(on) = 1 Ω
DS
DSS
R
DS(on)
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
I
D
6A
6A
6A
6A
Pw
110 W
32 W
110 W
110 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special careis taken to ensure a very good dv/dt capability for the
most dem anding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmes h™ products.
3
1
TO-220 TO-220FP
D2PAK
3
2
1
I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGH CURRENT, HIGH S PEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP6NK60Z P6NK60Z TO-220 TUBE
STP6NK60ZFP P6NK60ZFP TO-220FP TUBE
STB6NK60ZT4 B6NK60Z
STB6NK60Z-1 B6NK60Z
2
PAK
D
2
I
PAK
TAPE & REEL
TUBE
1/13April 2003
STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NK60Z
STB6NK60Z
STB6NK60Z-1
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 24 24 (*) A
Total Dissipation at TC= 25°C
66(*)A
3.8 3.8 (*) A
110 32 W
Derating Factor 0.88 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 3500 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
(1) I
≤6A, di/dt ≤200A/µs, VDD≤ V
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 V
Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
-55to150
-55to150
STP6NK60ZFP
600 V
600 V
°C
°C
THERMAL DATA
2
2
I
PAK
PAK /
TO-220FP
TO-220 / D
Rthj-case Thermal Resistance Junction-case Max 1.14 4.2 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
E
AS
Single Pulse Avalanche Energy
(starting T
max)
j
= 25 °C, ID=IAR,VDD=50V)
j
6A
210 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occas ionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoi d the usage
of external components.
2/13
STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHE RWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Zero Gate Voltage
Drain Current (V
GS
=0)
Gate-body Leakage
Current (V
DS
=0)
Gate Threshold Voltage
Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=8V,ID=3A 5 S
g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=1mA,VGS= 0 600 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C
V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID=3A 1 1.2 Ω
=25V,f=1MHz,VGS= 0 905
V
DS
115
25
VGS=0V,VDS= 0V to 480V 56 pF
VDD=300V,ID=3A
RG= 4.7Ω VGS=10V
14
14
(Resistive Load see, Figure 3)
=480V,ID=6A,
V
V
DD
GS
=10V
33
6
46 nC
17
µA
µA
pF
pF
pF
ns
ns
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 300 V, ID=3A
R
=4.7ΩVGS=10V
G
47
19
(Resistive Load see, Figure 3)
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time
Cross-over Time
= 480V, ID=6A,
V
DD
RG=4.7Ω, VGS= 10V
(Inductive Load see, Figure 5)
16
16
29
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD= 6 A, VGS=0
I
SD
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
= 6 A, di/dt = 100A/µs
445
2.7
12
when VDSincreases from 0 to 80%
oss
6
24
1.6 V
ns
ns
ns
ns
ns
A
A
ns
µC
A
3/13
STP6NK60Z - STP6NK60ZFP - STB6NK 60Z - STB 6NK60Z -1
SafeOperatingAreaforTO-220/D2PAK /I2PAK
ThermalImpedance forTO-220 /D2PAK/I2PAK
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
4/13
Transfer CharacteristicsOutput Characteristics
STP6NK60Z - STP6NK60ZFP - STB 6NK60Z - STB6NK60Z-1
Transconductance
Gate Charge vs Gate-so urc e V oltage
Static Drain-source On Resistance
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
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