ST STP6NC80Z, STP6NC80ZFP, STB6NC80Z, STB6NC80Z-1 User Manual
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N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK
STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
Zener-Protected PowerMESH™III MOSFET
TYPE V
DSS
R
DS(on)
I
D
STP6NC80Z/FP 800V < 1.8 Ω 5.4 A
STB6NC80Z/-1 800V < 1.8 Ω 5.4 A
■ TYPICAL R
■ EXTREMELY HIGH dv/dtAND CAPABILITY
(on) = 1.5 Ω
DS
GATE-TO- SO URCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ V ER Y LOW GATE INPUT RESISTANCE
■ GAT E CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-toback Zener diodes bet ween gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested b y a large variety
of single-switch applications.
APPLICATIONS
■ S INGLE -ENDED S MPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
3
1
D²PAK
3
2
1
I²PAK
(Tabless TO-220)
1
TO-220FP
3
2
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)6NC80Z(-1) STP6NC80ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
(•)Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
800 V
800 V
Gate- source Voltage ± 25 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C
(1)
Drain Current (pulsed) 21 21(*) A
Total Dissipation at TC= 25°C
5.4 5.4(*) A
3.4 3.4(*) A
125 40 W
Derating Factor 1 0.32 W/°C
Gate-source Current (●)±50mA
Gate source ESD(HBM-C=100pF, R=15KΩ) 3KV
Insulation Winthstand Voltage (DC) -- 2000 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD≤5.4A,di/dt ≤100A/µs, VDD≤ V
(*)Pulse width Limited by maximum temperature allowed
.
(BR)DSS,Tj≤TJMAX
1/13December 2002
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / D²PAK /
I²PAK
Rthj-case Thermal Resistance Junction-case Max 1 3.13 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID=IAR,VDD=50V)
j
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
∆BV
(BR)DSS
DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Breakdown Voltage Temp.
/∆T
J
Coefficient
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
DS
=0)
GS
=0)
= 250 µA, VGS=0
I
D
=1mA,VGS=0
I
D
= Max Rating
V
DS
= Max Rating, TC= 125 °C
V
DS
= ±20V
V
GS
800 V
TO-220FP
5.4 A
237 mJ
0.9 V/°C
1µA
50 µA
±10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
DS=VGS,ID
VGS=10V,ID=3A
= 250µA
345V
1.5 1.8 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 125 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID=3A
V
=25V,f=1MHz,VGS=0
DS
7S
1600 pF
12 pF
2/13
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 10 ns
Total Gate Charge
Gate-Source Charge 12 nC
Gate-Drain Charge 18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 13 ns
Cross-over Time 19 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SDM
V
I
SD
Q
I
RRM
SD
t
rr
rr
Source-drain Current 5.4 A
(2)
Source-drain Current (pulsed) 21 A
(1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 8.1 µC
Reverse Recovery Current 19 A
=400V,ID=3A
DD
RG= 4.7Ω VGS=10V
(see test circuit, Figure 3)
V
=640V,ID= 6A,
DD
VGS=10V
= 640V, ID=6A,
V
DD
R
=4.7Ω, VGS= 10V
G
(see test circuit, Figure 5)
ISD= 5.4 A, VGS=0
ISD= 6 A, di/dt = 100A/µs,
VDD=50V,Tj= 150°C
(see test circuit, Figure 5)
26 ns
45 nC
11 ns
1.6 V
850 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
Rz Dynamic Resistance
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V
Gate-Source Breakdown
Voltage
= αT(25°-T)BV
BV
GSO
(25°)
Igs=± 1mA (Open Drain) 25 V
10
I
=50mA,VGS=0
D
90 Ω
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIOD ES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’ s
ESD capability, but also t o make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zen er voltage is ap propriat e to achieve an efficient
and cost-effective intervention to prot ec t the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/13
STP6NC80Z/FP/STP6NC80Z-1
Safe Operating Area For TO-220FPSafe Operating Area For TO-220 /D²PAK/I²PAK
Thermal Impedance For TO-220 /D²PAK/I²PAK
Output Characteristics
Thermal Impedance For TO-220FP
Transfer Characteristics
4/13
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