ST STP6NC80Z, STP6NC80ZFP, STB6NC80Z, STB6NC80Z-1 User Manual

STB6NC80

STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1

N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

TYPE	VDSS	RDS(on)	ID
STP6NC80Z/FP	800V	< 1.8 Ω	5.4 A
STB6NC80Z/-1	800V	< 1.8 Ω	5.4 A

■TYPICAL RDS(on) = 1.5 Ω

■EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES

■100% AVALANCHE TESTED

■VERY LOW GATE INPUT RESISTANCE

■GATE CHARGE MINIMIZED

DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS

■SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION

■WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

3

1

D²PAK	3
	2
	1
TO-220	TO-220FP

1 2 3

I²PAK (Tabless TO-220)

Symbol	Parameter		Value				Unit
			STP(B)6NC80Z(-1)		STP6NC80ZFP
VDS	Drain-source Voltage (VGS = 0)		800				V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)		800				V
VGS	Gatesource Voltage		± 25				V
ID	Drain Current (continuous) at TC = 25°C		5.4		5.4(*)		A
ID	Drain Current (continuous) at TC = 100°C		3.4		3.4(*)		A
IDM (1)	Drain Current (pulsed)		21		21(*)		A
PTOT	Total Dissipation at TC = 25°C		125		40		W
	Derating Factor		1		0.32		W/°C
IGS	Gate-source Current (●)		±50				mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=15KΩ)		3				KV
dv/dt	Peak Diode Recovery voltage slope		3				V/ns
VISO	Insulation Winthstand Voltage (DC)		--		2000		V
Tstg	Storage Temperature		–65 to 150				°C
Tj	Max. Operating Junction Temperature		150				°C
(•)Pulse width limited by safe operating area		(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
December 2002		.(*)Pulse width Limited by maximum temperature allowed 1/13

STP6NC80Z/FP/STP6NC80Z-1

THERMAL DATA

		TO-220 / D²PAK /		TO-220FP
		I²PAK
Rthj-case	Thermal Resistance Junction-case Max	1		3.13	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	30			°C/W
Tl	Maximum Lead Temperature For Soldering Purpose	300			°C

AVALANCHE CHARACTERISTICS

	Symbol	Parameter	Max Value	Unit
	IAR	Avalanche Current, Repetitive or Not-Repetitive	5.4	A
		(pulse width limited by Tj max)
	EAS	Single Pulse Avalanche Energy	237	mJ
		(starting Tj = 25 °C, I D = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	800			V
	Breakdown Voltage
BVDSS/ TJ	Breakdown Voltage Temp.	ID = 1 mA, VGS = 0		0.9		V/°C
	Coefficient
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating, TC = 125 °C			50	µA
IGSS	Gate-body Leakage	VGS = ±20V			±10	µA
	Current (VDS = 0)

ON (1)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	3	4	5	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 3 A		1.5	1.8	Ω
	Resistance

DYNAMIC

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS > ID(on) x RDS(on)max,		7		S
		ID = 3A
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		1600		pF
Coss	Output Capacitance			125		pF
Crss	Reverse Transfer			12		pF
	Capacitance

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STP6NC80Z/FP/STP6NC80Z-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 400 V, ID = 3 A		26		ns
tr	Rise Time	RG = 4.7Ω VGS = 10V		10		ns
		(see test circuit, Figure 3)
Qg	Total Gate Charge	VDD = 640V, ID = 6A,		45		nC
Qgs	Gate-Source Charge			12		nC
		VGS = 10V
Qgd	Gate-Drain Charge			18		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
tr(Voff)	Off-voltage Rise Time	VDD = 640V, ID = 6 A,		11		ns
tf	Fall Time	RG = 4.7Ω, VGS = 10V		13		ns
tc	Cross-over Time	(see test circuit, Figure 5)		19		ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				5.4	A
ISDM (2)	Source-drain Current (pulsed)				21	A
VSD (1)	Forward On Voltage	ISD = 5.4 A, VGS = 0			1.6	V
trr	Reverse Recovery Time	ISD = 6 A, di/dt = 100A/µs,		850		ns
Qrr
	Reverse Recovery Charge	VDD = 50V, Tj = 150°C		8.1		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)		19		A

GATE-SOURCE ZENER DIODE

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
BVGSO	Gate-Source Breakdown	Igs=± 1mA (Open Drain)	25			V
	Voltage
αT	Voltage Thermal Coefficient	T=25°C Note(3)		1.3		10-4/°C
Rz	Dynamic Resistance	ID = 50 mA, VGS = 0		90		Ω

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2.Pulse width limited by safe operating area.

3.VBV = αT (25°-T) BV GSO(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.

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STP6NC80Z/FP/STP6NC80Z-1

Safe Operating Area For TO-220 /D²PAK/I²PAK

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220 /D²PAK/I²PAK

Thermal Impedance For TO-220FP

Output Characteristics								Transfer Characteristics

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