Page 1
DESCRIPTION
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
STP6635GH is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STP413D has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low R
and fast switching speed.
DS(ON)
PIN CONFIGURATION (D-PAK)
TO-252 TO-251
PART MARKING
FEATURE
-30V/-26.0A, R
-30V/-16.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and
maximum DC current capability
TO-252 package design
DS(ON)
@VGS = -10V
DS(ON)
@VGS =-4.5V
DS(ON)
= 20mΩ
= 36mΩ
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 2
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
STP6635GH
P Channel Enhancement Mode MOSFET
-
Parameter Symbol Typical Unit
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGSS ±20 V
40.0A
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM -150 A
Continuous Source Current (Diode Conduction) IS -32 A
Power Dissipation
Operation Junction Temperature TJ 150
Storgae Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RθJA 60
TA=25℃
TA=70℃
TA=25℃
ID
PD 44 W
-40.0
-25.0
℃
℃
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
A
/W
Page 3
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol Condition Min Typ Max
Uni
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current I
Zero Gate Voltage
Drain Current
On-State Drain
Current
Drain-source OnResistance
Forward
Transconductance
V
V
VGS=0V,ID=-250uA -30 V
(BR)DSS
VDS=VGS,ID=-250uA -1.0 -3.0 V
GS(th)
VDS=0V,VGS=±20V
GSS
±100
VDS=-30V,VGS=0V -1
I
I
D(on)
R
DS(on)
DSS
VDS=30V,VGS=0V
TJ=55℃
≧
V
-10V,VDS=-5V
DS
VGS=-10V,ID=-26A
VGS=-4.5V,ID=-16A
-5
-40 A
20
36
gfs VDS=-5V,ID=-26A 31 S
nA
uA
mΩ
Diode Forward Voltage VSD IS=-26.0A,VGS=0V -1.3 V
t
Dynamic
Total Gate Charge Qg 16.5
Gate-Source Charge Qgs 3.8
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse
TransferCapacitance
Turn-On Time
Turn-Off Time
C
C
C
t
d(on)
t
d(off)
iss
oss
rss
tr
tf
VGS=-4.5V,VDS=-25V
ID=-26A
12
1600
VDS =-25V,VGS=0V
169
VGS=-10V,VDS=-15V
RL=1.6Ω,R
RD=0.58Ω, ID=-26A
f=1MHz
GEN
=3.3Ω
175
7.9
65
24.8
91.2
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
nC
pF
nS
Page 4
TYPICAL CHARACTERICTICS
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 5
TYPICAL CHARACTERICTICS
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 6
GATE CHARGE TEST CIRCUIT & WAVEFORM
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
TESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 7
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
UNCLAMPED INDUCTIVE SWITCHING (UIS) TEST CIRCUIT & WAVEFORMS
DIODE RECOVERY TEST CIRCUIT & WAVEFORMS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 8
TO-252-2L PACKAGE OUTLINE SOP-8P
STP6635GH
P Channel Enhancement Mode MOSFET
-
40.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2009, Stanson Corp.
STP6635GH 2009. V1
Page 9
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