ST STP6NB80, STP6NB80FP User Manual
!
N - CHANNEL 800V - 1.6
TYPE |
VDSS |
RDS(on) |
ID |
|
STP6NB80 |
800 |
V |
< 1.9 Ω |
5.7 A |
STP6NB80FP |
800 |
V |
< 1.9 Ω |
5.7 A |
■TYPICAL RDS(on) = 1.6 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
■VERY LOW INTRINSIC CAPACITANCES
■GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
STP6NB80
STP6NB80FP
Ω - 5.7A - TO-220/TO-220FP PowerMESH MOSFET
PRELIMINARY DATA
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 |
TO-220FP |
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Un it |
|
|
ST P6NB80 |
STP6NB80F P |
|
VDS |
Drain-source Voltage (VGS = 0) |
|
800 |
V |
VDGR |
Draingate Voltage (RGS = 20 kΩ) |
|
800 |
V |
VGS |
Gate-source Voltage |
|
± 30 |
V |
ID |
Drain Current (continuous) at Tc = 25 oC |
5.7 |
5.7(*) |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
3.6 |
2 |
A |
IDM (•) |
Drain Current (pulsed) |
22.8 |
22.8 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
40 |
W |
|
Derating Factor |
1.0 |
0.32 |
W/o C |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4 |
4 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
|
2000 |
V |
Ts tg |
Storage Temperature |
-65 to 150 |
o C |
|
Tj |
Max. Operating Junction Temperature |
|
150 |
o C |
• |
Pulse width limited by safe operating area |
( 1) ISD |
≤ |
5.76 A, di/dt |
≤ |
μ |
s, VDD |
≤ |
V(BR)DSS, Tj |
≤ |
TJMAX |
( ) |
|
|
200 A/ |
|
|
||||||
(*) |
Limited only maximum temperature allowed |
|
|
|
|
|
|
|
|
|
|
September 1998 |
1/6 |
STP6NB80/FP
THERMAL DATA
|
|
|
|
|
TO-220 |
TO220-FP |
|
Rthj -case |
Thermal Resistance Junction-case |
Max |
1.0 |
3.1 |
oC/W |
||
Rthj -amb |
Thermal |
Resistance |
Junction-ambient |
Max |
62.5 |
|
oC/W |
Rthc-sink |
Thermal |
Resistance |
Case-sink |
Typ |
0.5 |
|
oC/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
300 |
|
oC |
|||
AVALANCHE CHARACTERISTICS
Symbo l |
Parameter |
Max Value |
Unit |
IAR |
Avalanche Current, Repetitive or Not-Repetitive |
5.7 |
A |
|
(pulse width limited by Tj max) |
|
|
EAS |
Single Pulse Avalanche Energy |
314 |
mJ |
|
(starting Tj = 25 oC, ID = IAR, VDD = 50 V) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. Max. |
Unit |
|
V(BR)DSS |
Drain-source |
ID = 250 μA VGS = 0 |
|
800 |
|
V |
|
Breakdown Voltage |
|
|
|
|
|
IDSS |
Zero Gate Voltage |
VDS = Max Rating |
Tc = 125 oC |
|
1 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating |
|
50 |
μA |
|
IGSS |
Gate-body Leakage |
VGS = ± 30 V |
|
|
± 100 |
nA |
|
Current (VDS = 0) |
|
|
|
|
|
ON ( )
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
|
VGS(th) |
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
3 |
4 |
5 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V |
ID = 3 A |
|
1.6 |
1.9 |
Ω |
|
Resistance |
|
|
|
|
|
|
ID(o n) |
On State Drain Current |
VDS > ID(o n) x RDS(on )ma x |
5.7 |
|
|
A |
|
|
|
VGS = 10 V |
|
|
|
|
|
DYNAMIC
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
|
gf s ( ) Forward |
VDS > ID(o n) x RDS(on )ma x |
ID = 3 A |
2.5 |
4.5 |
|
S |
|
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VGS = 0 |
|
1250 |
1625 |
pF |
Cos s |
Output Capacitance |
|
|
|
145 |
190 |
pF |
Crss |
Reverse Transfer |
|
|
|
16 |
21 |
pF |
|
Capacitance |
|
|
|
|
|
|
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