ST STP6NB50, STP6NB50FP User Manual
!
STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
STP6NB50 |
500 V |
< 1.5 Ω |
5.8 A |
STP6NB50FP |
500 V |
< 1.5 Ω |
3.4 A |
■TYPICAL RDS(on) = 1.35 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
■VERY LOW INTRINSIC CAPACITANCES
■GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 |
TO-220FP |
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Uni t |
|
|
STP6NB50 |
STP6NB50FP |
|
VDS |
Drain-source Voltage (VGS = 0) |
|
500 |
V |
VDGR |
Draingate Voltage (RGS = 20 kΩ) |
|
500 |
V |
VGS |
Gate-source Voltage |
|
± 30 |
V |
ID |
Drain Current (continuous) at Tc = 25 o C |
5.8 |
3.4 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
3.7 |
2.1 |
A |
IDM(•) |
Drain Current (pulsed) |
23.2 |
23.2 |
A |
Pt ot |
Total Dissipation at Tc = 25 oC |
100 |
35 |
W |
|
Derating Factor |
0.8 |
0.28 |
W/oC |
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
4.5 |
V/ns |
VISO |
Insulation Withstand Voltage (DC) |
-- |
2000 |
oC |
Tstg |
Storage Temperature |
-65 to 150 |
oC |
|
Tj |
Max. Operating Junction Temperature |
|
150 |
oC |
(•) Pulse width limited by safe operating area |
(1) ISD ≤ 6A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX |
|
||
March 1998 |
1/9 |
STP6NB50/FP
THERMAL DATA
|
|
|
|
|
TO-220 |
TO-220F P |
|
Rt hj-ca se |
Thermal Resistance Junction-case |
Max |
1.25 |
3.57 |
oC/W |
||
Rt hjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
62.5 |
|
oC/W |
Rthcsi nk |
Thermal |
Resistance |
Case-sink |
Typ |
0.5 |
|
oC/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
300 |
|
oC |
|||
AVALANCHE CHARACTERISTICS
Symb ol |
Parameter |
Max Valu e |
Uni t |
IAR |
Avalanche Current, Repetitive or Not-Repetitive |
5.8 |
A |
|
(pulse width limited by Tj max, δ < 1%) |
|
|
EAS |
Single Pulse Avalanche Energy |
290 |
mJ |
|
(starting Tj = 25 oC, ID = IAR , VDD = 50 V) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symb ol |
Parameter |
Test Cond ition s |
Mi n. |
Typ . Max. |
Un it |
|
V(BR)DSS |
Drain-source |
ID = 250 μA VGS = 0 |
|
500 |
|
V |
|
Breakdown Voltage |
|
|
|
|
|
IDSS |
Zero Gate Voltage |
VDS = Max Rating |
Tc = 125 oC |
|
1 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating |
|
50 |
μA |
|
IGSS |
Gate-body Leakage |
VGS = ± 30 V |
|
|
± 100 |
nA |
|
Current (VDS = 0) |
|
|
|
|
|
ON ( )
Symb ol |
Parameter |
Test Cond ition s |
Mi n. |
Typ . |
Max. |
Un it |
|
VGS(th) |
Gate Threshold |
VDS = VGS |
ID = 250 μA |
3 |
4 |
5 |
V |
|
Voltage |
|
|
|
|
|
|
RDS( on) |
Static Drain-source On |
VGS = 10V |
ID = 2.9 A |
|
1.35 |
1.5 |
Ω |
|
Resistance |
|
|
|
|
|
|
ID(o n) |
On State Drain Current |
VDS > ID(on) x RDS(on) max |
5.8 |
|
|
A |
|
|
|
VGS = 10 V |
|
|
|
|
|
DYNAMIC
Symb ol |
Parameter |
Test Cond ition s |
Mi n. |
Typ . |
Max. |
Un it |
|
gfs ( ) Forward |
VDS > ID(on) x RDS(on) max |
ID = 2.9 A |
2.5 |
4 |
|
S |
|
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VGS = 0 |
|
680 |
884 |
pF |
Coss |
Output Capacitance |
|
|
|
110 |
149 |
pF |
Crss |
Reverse Transfer |
|
|
|
12 |
16 |
pF |
|
Capacitance |
|
|
|
|
|
|
2/9
STP6NB50/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol |
Parameter |
Test Cond ition s |
Mi n. Typ . Max. Un it |
|||
td(on) |
Turn-on Time |
VDD = 250 V |
ID = 2.9 A |
11.5 |
16 |
ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 10 V |
8 |
12 |
ns |
|
|
(see test circuit, figure 3) |
|
|
|
|
Qg |
Total Gate Charge |
VDD = 400 V |
ID = 5.8 A VGS = 10 V |
21 |
30 |
nC |
Qgs |
Gate-Source Charge |
|
|
7.2 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
8 |
|
nC |
SWITCHING OFF
Symb ol |
Parameter |
tr(Vof f) |
Off-voltage Rise Time |
tf |
Fall Time |
tc |
Cross-over Time |
Test Cond ition s |
Mi n. Typ . |
Max. |
Un it |
|
VDD = 400 V |
ID = 5.8 A |
7 |
12 |
ns |
RG = 4.7 Ω |
VGS = 10 V |
5 |
10 |
ns |
(see test circuit, figure 5) |
15 |
23 |
ns |
|
SOURCE DRAIN DIODE
Symb ol |
Parameter |
Test Cond ition s |
Mi n. Typ . Max. |
Un it |
ISD |
Source-drain Current |
|
5.8 |
A |
ISDM (•) |
Source-drain Current |
|
23.2 |
A |
(pulsed)
VSD ( ) Forward On Voltage
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
IRRM Reverse Recovery
Current
ISD = 5.8 A |
VGS = 0 |
|
1.6 |
V |
ISD = 5.8 A |
di/dt = 100 A/μs |
435 |
|
ns |
VDD = 100 V |
Tj = 150 oC |
|
|
μC |
(see test circuit, figure 5) |
3.3 |
|
||
|
|
15 |
|
A |
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 |
Safe Operating Area for TO-220FP |
3/9
Loading...