ST STP6NB50, STP6NB50FP User Manual

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N - CHANNEL ENHANCEMENT MODE

STP6NB50

STP6NB50FP

PowerMESH MOSFET

TYPE V

STP6NB50 STP6NB50FP

■ TYPICALR

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ VERYLOW INTRINSICCAPACITANCES

■ GATECHARGEMINIMIZED

DS(on)

DSS

500 V 500 V

=1.35 Ω

R

DS(on)

<1.5Ω <1.5Ω

I

D

5.8 A

3.4 A

DESCRIPTION

Using the latest high voltageMESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switchingcharacteristics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCHMODEPOWER SUPPLIES(SMPS)

■ DC-ACCONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIESAND MOTORDRIVE

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Para meter Value Uni t

ST P6 NB50 ST P6NB 50FP

V

I

DM

P

dv/dt(

V

T

(•) Pulsewidth limitedby safe operating area (1)ISD≤ 6A, di/dt ≤ 200 A/µs, VDD≤ V

March 1998

Drain-source Voltage (VGS=0) 500 V

DS

Drain- gate Voltage (RGS=20kΩ)

DGR

Gat e- source Volt age ± 30 V

GS

Drain Current (con tinuous) at Tc=25oC5.83.4A

I

D

I

Drain Current (con tinuous) at Tc=100oC3.72.1A

D

500 V

(•) Drain Current (puls ed ) 23.2 23.2 A

Tot al Dissipat i on at Tc=25oC10035W

tot

Derat in g Factor 0.8 0.28 W/

1) Pea k Diode Recovery volt age sl ope 4.5 4.5 V/ns

Ins ulation With st and V oltage (DC) -- 2000

ISO

Sto rage Temper ature -65 to 150

stg

Max. Operat ing J unctio n Temper at u r e 150

T

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

o

C

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STP6NB50/FP

THERMAL DATA

TO-220 TO- 220FP

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Value Uni t

I

AR

E

Ther mal Resist ance Junctio n-c a s e Max 1.25 3.57 Ther mal Resist ance Junctio n-ambient Max

Ther mal Resist ance Case-sink T yp Maximum Lead T e mperat ure For Sold eri ng Pur p os e

l

Avalanche Curre nt , Repet it i v e or Not-Repetitive (pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max, δ <1%)

j

62.5

0.5

300

5.8 A

290 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

500 V

Breakdown Voltage

I

DSS

I

GSS

Zer o Gate Vo lt age Drain Cur rent (V

GS

Gat e-body Leakage Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125oC

DS

= ± 30 V

V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

345V

Voltage

R

DS(on)

Stati c Drain-so urce On

VGS=10V ID= 2.9 A 1.35 1.5 Ω

Resistance

I

D(on)

On S tate Drain Cu rr e nt VDS>I

D(on)xRDS(on)max

5.8 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

Input Capaci tance

iss

Out put C apa citanc e

oss

Reverse Transfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=2.9A 2.5 4 S

VDS=25V f=1MHz VGS= 0 680

110

12

884 149

16

µA µA

pF pF pF

2/9

STP6NB50/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

Turn-on Time

r

Rise Time

t

VDD=250V ID=2.9A

=4.7 Ω VGS=10V

R

G

11.5 8

(see test circuit, figure 3)

Q

Total Gate Charge

g

Gat e-Sour ce Charge

gs

Gate-Drain Charge

gd

VDD=400V ID=5.8A VGS=10V 21

7.2 8

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Of f - voltag e Rise Tim e Fall Time

f

Cross-ov er Tim e

c

VDD=400V ID=5.8A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

7 5

15

SOURCE DRAIN DIODE

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 % (•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current (pulsed)

(∗) For ward On Voltage ISD=5.8A VGS=0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

= 5.8 A di/dt = 100 A /µs

I

SD

=100V Tj=150oC

V

DD

(see test circuit, figure 5)

435

3.3

Charge Reverse Recovery

15

Current

16 12

30 nC

12 10 23

5.8

23.2

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP

3/9