ST STP6LNC60, STP6LNC60FP User Manual
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STP6LNC60
STP6LNC60FP
N-CHANNEL 600V - 1Ω - 5.8A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE |
VDSS |
RDS(on) |
ID |
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STP6LNC60 |
600 V |
< 1.25 Ω |
5.8 A |
STP6LNC60FP |
600 V |
< 1.25 Ω |
5.8 A |
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■TYPICAL RDS(on) = 1.0 Ω
■EXTREMELY HIGH dv/dt CAPABILITY
■100% AVALANCHE TESTED
■NEW HIGH VOLTAGE BENCHMARK
■GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220 |
TO-220FP |
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
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Value |
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Unit |
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STP6LNC60 |
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STP6LNC60FP |
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VDS |
Drain-source Voltage (VGS = 0) |
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600 |
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V |
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VDGR |
Drain-gate Voltage (RGS = 20 kΩ) |
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600 |
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V |
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VGS |
Gatesource Voltage |
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±30 |
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V |
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ID |
Drain Current (continuos) at TC = 25°C |
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5.8 |
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5.8 (*) |
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A |
ID |
Drain Current (continuos) at TC = 100°C |
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3.65 |
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3.65 (*) |
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A |
IDM (●) |
Drain Current (pulsed) |
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23.2 |
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23.2 (*) |
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A |
PTOT |
Total Dissipation at TC = 25°C |
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100 |
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35 |
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W |
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Derating Factor |
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0.8 |
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0.28 |
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W/°C |
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dv/dt (1) |
Peak Diode Recovery voltage slope |
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3 |
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V/ns |
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VISO |
Insulation Withstand Voltage (DC) |
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- |
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2500 |
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V |
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Tstg |
Storage Temperature |
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–65 to 150 |
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°C |
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Tj |
Max. Operating Junction Temperature |
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(•)Pulse width limited by safe operating area |
(1)ISD ≤5.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. |
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(*) Limited only by maximum temperature allowed |
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October 2001 |
1/9 |
STP6LNC60/STP6LNC60FP
THERMAL DATA
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TO-220 |
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TO-220FP |
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Rthj-case |
Thermal Resistance Junction-case Max |
1.25 |
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3.53 |
°C/W |
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Rthj-amb |
Thermal Resistance Junction-ambient Max |
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62.5 |
°C/W |
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Tl |
Maximum Lead Temperature For Soldering Purpose |
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300 |
°C |
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AVALANCHE CHARACTERISTICS
Symbol |
Parameter |
Max Value |
Unit |
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IAR |
Avalanche Current, Repetitive or Not-Repetitive |
5.8 |
A |
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(pulse width limited by Tj max) |
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EAS |
Single Pulse Avalanche Energy |
300 |
mJ |
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(starting Tj = 25 °C, I D = IAR, VDD = 50 V) |
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ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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V(BR)DSS |
Drain-source |
ID = 250 µA, VGS = 0 |
600 |
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V |
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Breakdown Voltage |
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IDSS |
Zero Gate Voltage |
VDS = Max Rating |
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1 |
µA |
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Drain Current (VGS = 0) |
VDS = Max Rating, TC = 125 °C |
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50 |
µA |
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IGSS |
Gate-body Leakage |
VGS = ±30V |
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±100 |
nA |
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Current (VDS = 0) |
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ON (1)
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, ID = 250µA |
2 |
3 |
4 |
V |
RDS(on) |
Static Drain-source On |
VGS = 10V, ID = 3 A |
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1.0 |
1.25 |
Ω |
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Resistance |
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DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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gfs (1) |
Forward Transconductance |
VDS > ID(on) x RDS(on)max, |
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6 |
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S |
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ID = 3A |
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Ciss |
Input Capacitance |
VDS = 25V, f = 1 MHz, VGS = 0 |
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830 |
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pF |
Coss |
Output Capacitance |
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120 |
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pF |
Crss |
Reverse Transfer |
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15.5 |
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pF |
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Capacitance |
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2/9
STP6LNC60/STP6LNC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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td(on) |
Turn-on Delay Time |
VDD = 300 V, ID = 3 A |
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14.5 |
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ns |
tr |
Rise Time |
RG = 4.7Ω VGS = 10 V |
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15.5 |
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ns |
(see test circuit, Figure 3) |
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Qg |
Total Gate Charge |
VDD = 480V, ID = 6 A, |
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28 |
39 |
nC |
Qgs |
Gate-Source Charge |
VGS = 10V |
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4.8 |
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nC |
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Qgd |
Gate-Drain Charge |
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17.5 |
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nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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tr(Voff) |
Off-voltage Rise Time |
VDD = 480V, ID = 6 A, |
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9 |
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ns |
tf |
Fall Time |
RG = 4.7Ω, VGS = 10V |
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7.5 |
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ns |
(see test circuit, Figure 5) |
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tc |
Cross-over Time |
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16 |
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ns |
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SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
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ISD |
Source-drain Current |
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5.8 |
A |
ISDM (2) |
Source-drain Current (pulsed) |
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23.2 |
A |
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VSD (1) |
Forward On Voltage |
ISD = 6 A, VGS = 0 |
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1.6 |
V |
trr |
Reverse Recovery Time |
ISD =6 A, di/dt = 100A/µs |
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450 |
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ns |
Qrr |
Reverse Recovery Charge |
VDD = 100V, Tj = 150°C |
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2.4 |
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µC |
(see test circuit, Figure 5) |
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IRRM |
Reverse Recovery Current |
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10.6 |
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A |
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Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
3/9
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