ST STD65NF06, STP65NF06 User Manual

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N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220

General features

Type V

STD65NF06 60V <14mΩ 60A

STP65NF06 60V <14mΩ 60A

DSS

R

DS(on)

I

STD65NF06

STP65NF06

STripFET™ II Power MOSFET

D

■ Standard level gate drive

■ 100% avalanche tested

Description

This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

Applications

■ Switching application

3

1

DPAK

TO-220

Internal schematic diagram

3

2

1

Order codes

Part number Marking Package Packaging

STD65NF06 D65NF06 DPAK Tape & reel

STP65NF06 P65NF06 TO-220 Tube

July 2006 Rev 1 1/14

www.st.com

14

Contents STD65NF06 - STP65NF06

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STD65NF06 - STP65NF06 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

DM

P

I

I

DS

GS

D

D

(1)

tot

Drain-source voltage (VGS = 0) 60 V

Gate- source voltage ± 20 V

Drain current (continuous) at TC = 25°C 60 A

Drain current (continuous) at TC = 100°C 42 A

Drain current (pulsed) 240 A

Total dissipation at TC = 25°C 110 W

Derating Factor 0.73 W/°C

(2)

dv/dt

E

AS

T

stg

T

j

1. Pulse width limited by safe operating area.

2. ISD ≤ 60A, di/dt ≤300A/µs, VDD ≤ V

3. Starting Tj = 25 °C, ID = 30A, VDD = 40V

Peak diode recovery voltage slope 10 V/ns

(3)

Single pulse avalanche energy 390 mJ

Storage temperature

-55 to 175 °C

Max. operating junction temperature

, Tj ≤ T

(BR)DSS

JMAX

Table 2. Thermal data

Symbol Parameter TO-220 DPAK Unit

Rthj-case Thermal resistance junction-case max 1.36 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W

Rthj-pcb

(1)

Thermal resistance junction-pcb max -- 50 °C/W

T

Maximum lead temperature for soldering

l

300 -- °C/W

purpose (for 10sec. 1.6mm from case)

1. When mounted on FR-4 of 1 inch², 2 oz Cu

3/14

Electrical characteristics STD65NF06 - STP65NF06

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 250µA, VGS =0 60 V

VDS = Max rating
VDS = Max rating,@125°C

1

10

VGS = ± 20V ±100 nA

Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V

Static drain-source on
resistance

= 10V, ID = 30A 11.5 14 mΩ

V

GS

Table 4. Dynamic

Symbol Parameter Test co nd iti ons Min. Typ. Max. Unit

Forward

(1)

g

fs

C

C

oss

C

transconductance

Input capacitance

iss

Output capacitance
Reverse transfer

rss

capacitance

V

= 25V, ID=30A 50 S

DS

= 25V, f = 1MHz,

V

DS

VGS = 0

1700

400
135

µA
µA

pF
pF
pF

t

d(on)

t

t

d(off)

t

Q
Q
Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

V
R
(see Figure 12)

VDD = 30V, ID = 60A,
V
(see Figure 13)

4/14

= 30V, ID = 30A

DD

=4.7Ω VGS = 10V

G

= 10V, RG=4.7Ω

GS

15
60
40
16

54
10
20

ns
ns
ns
ns

75 nC

nC
nC

STD65NF06 - STP65NF06 Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 60A, VGS = 0 1.5 V

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 60A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see Figure 14)

70

150

4.4

60

240

A
A

ns

nC

A

5/14