ST STP60NS04Z User Manual
!
|
STP60NS04Z |
|
N - CHANNEL CLAMPED 10mΩ - 60A - TO-220 |
FULLY PROTECTED MESH OVERLAY MOSFET |
|
|
PRELIMINARY DATA |
TYPE |
VDSS RDS(on) ID |
STP60NS04Z |
CLAMPED <0.015 Ω 60 A |
■TYPICAL RDS(on) = 0.010 Ω
■100% AVALANCHE TESTED
■LOW CAPACITANCE AND GATE CHARGE
■175 oC MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout.
The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
APPLICATIONS
■ABS, SOLENOID DRIVERS
■MOTOR CONTROL
■DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Un it |
VDS |
Drain-source Voltage (VGS = 0) |
|
CLAMPED |
V |
VDG |
Draingate Voltage |
|
CLAMPED |
V |
VGS |
Gate-source Voltage |
|
CLAMPED |
V |
ID |
Drain Current (continuous) at Tc = 25 oC |
|
60 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
|
42 |
A |
IDG |
Drain Gate Current (continuous) |
|
± 50 |
mA |
IGS |
Gate Source Current (continuous) |
|
± 50 |
mA |
IDM (•) |
Drain Current (pulsed) |
|
240 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
|
140 |
W |
|
Derating Factor |
|
0.93 |
W/o C |
VESD (G-S ) Gate-Source ESD (HBM - C= 100pF, R=1.5 kΩ) |
2 |
kV |
||
VESD(G-D) Gate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ) |
4 |
kV |
||
VESD(D-S) |
Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ) |
4 |
kV |
|
Ts tg |
Storage Temperature |
|
-65 to 175 |
o C |
Tj |
Max. Operating Junction Temperature |
|
-40 to 175 |
o C |
(•) Pulse width limited by safe operating area |
( 1) ISD ≤60 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX |
|
||
December 1999 |
1/8 |
STP60NS04Z
THERMAL DATA
Rthj -case |
Thermal Resistance Junction-case |
Max |
1.07 |
oC/W |
||
Rthj -case |
Thermal Resistance Junction-case |
Typ |
0.85 |
oC/W |
||
Rthj -amb |
Thermal |
Resistance |
Junction-ambient |
Max |
62.5 |
oC/W |
Rthc-sink |
Thermal |
Resistance |
Case-sink |
Typ |
0.5 |
oC/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
300 |
oC |
|||
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter |
Max Value |
Unit |
Avalanche Current, Repetitive or Not-Repetitive |
60 |
A |
(pulse width limited by Tj max, δ < 1%) |
|
|
Single Pulse Avalanche Energy |
400 |
mJ |
(starting Tj = 25 oC, ID = IAR, VDD = 30 V) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l |
Parameter |
Test Con ditions |
Min. Typ. Max. Unit |
|||
VCLAMP |
Drain-Gate Breakdown |
ID = 1 mA |
VGS = 0 |
33 |
V |
|
|
Voltage |
-40 < Tj < 175 oC |
|
|
||
IDSS |
Zero Gate Voltage |
VDS = 16 V |
|
Tj = 175 oC |
50 |
μA |
|
Drain Current (VGS = 0) |
|
|
|
|
|
IGSS |
Gate-body Leakage |
VGS = ± 10 |
V |
Tj = 175 oC |
50 |
μA |
|
Current (VDS = 0) |
VGS = ± 16 |
V |
Tj = 175 oC |
150 |
μA |
VGSS |
Gate-Source |
IG = 100 μA |
|
18 |
V |
|
|
Breakdown Voltage |
|
|
|
|
|
ON ( )
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
VGS(th) |
Gate Threshold Voltage |
VDS=VGS ID = 1 mA |
1.7 |
3 |
4.2 |
V |
|
|
-40 < Tj < 150 oC |
|
|
|
|
RDS(on) |
Static Drain-source On |
VGS = 10V |
|
Resistance |
VGS = 16V |
ID(o n) |
On State Drain Current |
VDS > ID(o n) |
|
|
VGS = 10 V |
ID = 30 A |
|
11 |
15 |
mΩ |
ID = 30 A |
|
10 |
14 |
mΩ |
x RDS(on )ma x |
60 |
|
|
A |
DYNAMIC
Symbo l |
Parameter |
Test Con ditions |
Min. |
Typ. |
Max. |
Unit |
|
gf s ( ) Forward |
VDS > ID(o n) x RDS(on )ma x |
ID =30 A |
20 |
30 |
|
S |
|
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VGS = 0 |
|
2500 |
3400 |
pF |
Cos s |
Output Capacitance |
|
|
|
800 |
1100 |
pF |
Crss |
Reverse Transfer |
|
|
|
150 |
200 |
pF |
|
Capacitance |
|
|
|
|
|
|
2/8
STP60NS04Z
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l |
Parameter |
Test Con ditions |
Min. Typ. Max. Unit |
||
Qg |
Total Gate Charge |
VDD = 16 V ID = 60 A VGS = 10 V |
70 |
100 |
nC |
Qgs |
Gate-Source Charge |
|
20 |
|
nC |
Qgd |
Gate-Drain Charge |
|
22 |
|
nC |
SWITCHING OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
tr (Voff) |
Off-voltage Rise Time |
tf |
Fall Time |
tc |
Cross-over Time |
VCLAMP = 30 V ID = 60 A |
25 |
35 |
ns |
RG =4.7 Ω VGS = 10 V |
110 |
150 |
ns |
(see test circuit, figure 5) |
150 |
200 |
ns |
SOURCE DRAIN DIODE
Symbo l |
Parameter |
|
Test Con ditions |
Min. |
Typ. Max. |
Unit |
ISD |
Source-drain Current |
|
|
|
60 |
A |
ISDM (•) |
Source-drain Current |
|
|
|
240 |
A |
|
(pulsed) |
|
|
|
|
|
VSD ( ) |
Forward On Voltage |
ISD = 60 A |
VGS = 0 |
|
1.5 |
V |
trr |
Reverse Recovery |
ISD = 60 A |
di/dt = 100 A/μs |
|
65 |
ns |
|
Time |
Vr = 25 V |
Tj = 150 oC |
|
|
μC |
Qrr |
Reverse Recovery |
(see test circuit, figure 5) |
|
0.15 |
||
|
Charge |
|
|
|
|
|
IRRM |
Reverse Recovery |
|
|
|
4.5 |
A |
|
Current |
|
|
|
|
|
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Area |
Thermal Impedance |
3/8
Loading...