ST STP60NH2LL User Manual

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N-channel 24V - 0.010Ω - 40A TO-220

General features

V

Type

STP60NH2LL 24V <0.011Ω 40A

1. Value limited by wire bonding

DSS

(@Tjmax)

R

DS(on)

I

STP60NH2LL

STripFET™ Power MOSFET

D

(1)

■ R

■ Conduction losses reduced

■ Switching losses reduced

■ Low threshold device

* Qg industry’s benchmark

DS(ON)

Description

The STP60NH2LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

Applications

■ Switching application

3

2

1

TO-220

Internal schematic diagram

Order codes

Part number Marking Package Packaging

STP60NH2LL P60NH2LL TO-220 Tube

January 2007 Rev 3 1/14

www.st.com

14

Contents STP60NH2LL

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14

STP60NH2LL Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

(1)

V

spike

V

DS

V

GS

I

D

I

D

I

DM

P

TOT

E

AS

T

stg

T

1. Guaranteed when external Rg=4.7 Ω and tf < t

2. Pulse width limited by safe operating area

3. Starting Tj = 25 oC, ID = 20A, VDD = 15V

Drain-source Voltage Rating 30 V

Drain-source voltage (VGS = 0) 24 V

Gate-source voltage ±18 V

Drain current (continuous) at TC = 25°C 40 A

Drain current (continuous) at TC=100°C 28 A

(2)

Drain current (pulsed) 160 A

Total dissipation at TC = 25°C 60 W

Derating factor 0.4 W/°C

(3)

Single pulse avalanche energy 600 mJ

Storage temperature

-55 to 175 °C

Max. operating junction temperature

j

fmax

Table 2. Thermal data

R

thj-case

R

thj-a

T

Thermal resistance junction-case Max 2.5 °C/W

Thermal resistance junction-ambient Max 100 °C/W

Maximum lead temperature for soldering

l

purpose

275 °C

3/14

Electrical characteristics STP60NH2LL

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate body leakage current (VDS = 0)

= 25 mA, VGS= 0 24 V

I

D

V

= Max rating,

DS

= Max rating

V

DS

TC=125°C

V

= ±16V ± 100 nA

GS

1

10

Gate threshold voltage VDS= VGS, ID = 250µA 1 V

Static drain-source on resistance

= 10V, ID= 20A

V

GS

= 4.5V, ID= 20A

V

GS

0.010

0.012

0.011

0.0135

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 10V, ID = 10A 18 S

DS

V

=25V, f=1 MHz,

DS

=0

V

GS

990 385

40

µA µA

Ω

pF pF pF

Turn-on delay time

t

rise time

r

Turn-off delay time

t

fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

(2)

Output charge VDS= 16 V, VGS= 0 V 7.6 nC

VDD = 10 V, ID = 20 A R (see Figure 13)

0.44 ≤ V V

Q

t

d(on)

t

d(off)

Q

oss

f=1MHz Gate DC Bias=0

R

Gate input resistance

g

test signal level=20mV open drain

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Chapter 4: Appendix A

4/14

=4.7 Ω, VGS = 4.5 V

G

=10V, ID = 40A

DD

=4.5V

GS

5 56 13 10

8.7

4.2

2.4

27 nC

ns ns

nC nC

1.3 Ω

STP60NH2LL Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current 40 A

Source-drain current (pulsed) 160 A

(1)

Forward on voltage

rr

Reverse recovery time Reverse recovery charge

rr

Reverse recovery current

I

=20A, VGS=0

SD

=40A,

I

SD

di/dt = 100A/µs,

=15V, Tj=150°C

V

DD

(see Figure 15)

32.5 28

1.7

1.3 V

ns

µC

A

5/14