ST STB60NF10, STP60NF10 User Manual

!

STB60NF10

STP60NF10

N-CHANNEL 100V - 0.019 Ω - 80A D²PAK/TO-220

STripFET™ II POWER MOSFET

Table 1: General Features

TYPE	VDSS	RDS(on)	ID
STB60NF10	100 V	< 0.023 Ω	80 A
STP60NF10	100 V	< 0.023 Ω	80 A

■TYPICAL RDS(on) = 0.019 Ω

■EXTREMELY HIGHL dv/dt CAPABILITY

■100% AVALANCHE TESTED

■SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

DESCRIPTION

This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

APPLICATIONS

■HIGH EFFICIENCY DC/DC CONVERTERS, INDUSTRIAL, AND LIGHTING EQUIPMENT.

■MOTOR CONTROL

Figure 1:Package

3
1	3
D2PAK	2
	1
TO-263
(Suffix “T4”)	TO-220

Figure 2: Internal Schematic Diagram

Table 2: Ordering Information

SALES TYPE	MARKING	PACKAGE	PACKAGING
STB60NF10T4	B60NF10	TO-263	TAPE & REEL
STP60NF10	P60NF10	TO-220	TUBE

Table 3:ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value		Unit
VDS	Drain-source Voltage (VGS = 0)	100		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )	100		V
VGS	Gatesource Voltage	± 20		V
ID(*)	Drain Current (continuous) at TC = 25°C	80		A
ID	Drain Current (continuous) at TC = 100°C	66		A
IDM(•)	Drain Current (pulsed)	320		A
Ptot	Total Dissipation at TC = 25°C	300		W
	Derating Factor	2		W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	16		V/ns
EAS (2)	Single Pulse Avalanche Energy	485		mJ
Tstg	Storage Temperature	-55 to 175		°C
(•) Pulse width	limited by safe operating area.	(1) ISD ≤ 80A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤	TJMAX
(**) Current Limited by Package		(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V

May 2005

Rev. 2.0

1/10

STB60NF10 STP60NF10

Table 4: THERMAL DATA

Rthj-case	Thermal Resistance Junction-case	Max	0.5	°C/W
Rthj-amb	Thermal Resistance Junction-ambient	Max	62.5	°C/W
Tl	Maximum Lead Temperature For Soldering Purpose		300	°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Table 5: OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 µA, VGS = 0	100			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating TC = 125°C			10	µA
IGSS	Gate-body Leakage	VGS = ± 20 V			±100	nA
	Current (VDS = 0)

Table 6: ON (*)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10 V	ID = 40 A		0.019	0.023	Ω
	Resistance

Table 7: DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs (*)	Forward Transconductance	VDS = 25 V	ID = 40 A		78		S
Ciss	Input Capacitance	VDS = 25V	f = 1 MHz VGS = 0		4270		pF
Coss	Output Capacitance				470		pF
Crss	Reverse Transfer				140		pF
	Capacitance

2/10

STB60NF10 STP60NF10

ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
td(on)	Turn-on Delay Time	VDD = 50 V	ID = 40	A		17		ns
tr	Rise Time	RG = 4.7 Ω	VGS = 10	V		56		ns
		(Resistive Load, Figure )
Qg	Total Gate Charge	VDD= 50V ID= 80A VGS= 10V				104		nC
Qgs	Gate-Source Charge					20		nC
Qgd	Gate-Drain Charge					32		nC

Table 9: SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
td(off)	Turn-off Delay Time	VDD = 50 V	ID = 40 A		82		ns
tf	Fall Time	RG = 4.7Ω,	VGS = 10 V		23		ns
		(Resistive Load, Figure 3)

Table 10: SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
ISD	Source-drain Current					80	A
ISDM (•)	Source-drain Current (pulsed)					320	A
VSD (*)	Forward On Voltage	ISD = 80 A	VGS = 0			1.3	V
trr	Reverse Recovery Time	ISD = 80 A	di/dt = 100A/µs		92		ns
Qrr	Reverse Recovery Charge	VDD = 50 V	Tj = 150°C		340		µC
IRRM	Reverse Recovery Current	(see test circuit, Figure 5)			7.4		A

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area.

Figure 3:	Safe Operating Area	Figure 4: Thermal Impedance

3/10