ST STB60NF06L, STP60NF06L, STP60NF06LFP User Manual
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3
STP60NF06L - STP60NF06LFP
N-channel 60V - 0.012Ω - 60A - TO-220/D2PAK/TO-220FP
General features
Type V
STB60NF06L 60V <0.014Ω 60
STP60NF06L 60V <0.014Ω 60A
STP60NF06LFP 60V <0.014Ω 60A
1. Refer to SOA for the max allowable current values on
FP-type due to Rth value
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
■ 175°C operating range
■ Low threshold drive
DSS
Description
R
DS(on)
I
STB60NF06L
STripFET™ II Power MOSFET
D
(1)
D2PAK
Internal schematic diagram
3
1
TO-220FP
3
2
1
TO-220
2
1
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STB60NF06LT4 B60NF06L D
STP60NF06L P60NF06L TO-220 Tube
STP60NF06LFP P60NF06LFP TO-220FP Tube
2
PAK Tape & reel
June 2006 Rev 3 1/16
www.st.com
16
Contents STB60NF06L - STP60NF06L - STP60NF06LFP
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STB60NF06L - STP60NF06L - STP60NF06LFP Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
2
D
PAK
TO-220
TO-220FP
Drain-source voltage (VGS = 0) 60 V
Drain-gate voltage (RGS = 20 kΩ)60V
Gate- source voltage ± 15 V
Drain current (continuous) at TC = 25°C 60 60
Drain current (continuous) at TC = 100°C 42 42
Drain current (pulsed) 240 240
Total dissipation at TC = 25°C 110 30 W
V
I
V
DGR
V
DM
P
I
I
DS
GS
D
D
(2)
tot
Derating Factor 0.73 0.2 W/°C
(3)
dv/dt
E
AS
V
ISO
T
stg
T
j
1. Refer to SOA for the max allowable current values on FP-type due to Rth value
2. Pulse width limited by safe operating area.
3. ISD ≤ 60A, di/dt ≤600A/µs, VDD ≤ 48V, Tj ≤ T
4. Starting Tj = 25 °C, ID = 30A, VDD = 30V
Peak diode recovery voltage slope 20 V/ns
(4)
Single pulse avalanche energy 320 mJ
Insulation withstand voltage (DC) -- 2000 V
Storage temperature
-65 to 175 °C
Max. operating junction temperature
JMAX
(1)
(1)
(1)
A
A
A
Table 2. Thermal data
D2PAK
TO-220
Rthj-case Thermal resistance junction-case Max 1.36 5.0 °C/W
Rthj-amb
Rthj-pcb
T
Thermal resistance junction-ambient
Thermal resistance junction-pcb
Maximum lead temperature for soldering
l
(1)
Max
Max
purpose
1. Only for SMD, When mounted on 1 inch2 FR-4 board, 2 oz of Cu.
TO-220FP
62.5
35
300
°C/W
°C/W
°C
3/16
Electrical characteristics STB60NF06L - STP60NF06L - STP60NF06LFP
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
ID = 250µA, VGS =0 60 V
V
= Max rating
DS
VDS = Max rating,
= 125°C
T
C
1
10
VGS = ± 15V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 1 V
Static drain-source on
resistance
= 5V, ID = 30A
V
GS
= 10V, ID = 30A
V
GS
0.014
0.012
0.016
0.014
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
transconductance
V
= 15V, ID= 30A 20 S
DS
µA
µA
Ω
Ω
C
C
oss
C
t
d(on)
t
t
d(off)
t
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Input capacitance
iss
Output capacitance
Reverse transfer
rss
capacitance
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 25V, f = 1MHz,
V
DS
VGS = 0
= 30V, ID = 30A
V
DD
=4.7Ω VGS = 4.5V
R
G
(see Figure 15)
VDD = 48V, ID = 60A,
= 4.5V, RG=4.7Ω
V
GS
(see Figure 16)
2000
360
125
35
220
55
30
35
10
20
pF
pF
pF
ns
ns
ns
ns
66 nC
nC
nC
4/16
STB60NF06L - STP60NF06L - STP60NF06LFP Electrical characteristics
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 60A, VGS = 0 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 60A, di/dt = 100A/µs,
VDD = 30V, Tj = 150°C
(see Figure 17)
110
250
4.5
60
240
A
A
ns
nC
A
5/16
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