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N-channel 60V - 0.014Ω - 60A TO-220
General features
Type V
STP60NF06 60V <0.016Ω 60A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
DSS
R
DS(on)
I
STP60NF06
STripFET II™ Power MOSFET
D
3
2
1
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
■ Switching application
Order code
Part number Marking Package Packaging
STP60NF06 P60NF06 TO-220 Tube
TO-220
Internal schematic diagram
March 2007 Rev 6 1/12
www.st.com
12
Contents STP60NF06
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP60NF06 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
Drain-source voltage (VGS = 0) 60 V
DS
Gate- source voltage ±20 V
GS
Drain current (continuos) at TC = 25°C 60 A
I
D
I
Drain current (continuos) at TC = 100°C 42 A
D
(1)
Drain current (pulsed) 240 A
Total dissipation at TC = 25°C 110 W
TOT
Derating factor 0.74 W/°C
(2)
dv/dt
T
1. Pulse width limited by safe operating area
2. I
SD
Peak diode recovery voltage slope 7.5 V/ns
Storage temperature
stg
Max. operating junction temperature
T
j
≤ 60A, di/dt ≤ 400 A/µs, V
≤ 48V, Tj ≤ T
DD
jmax
– 55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
Thermal resistance junction-case max 1.36 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
thj-a
Maximum lead temperature for soldering
T
l
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
E
Avalanche current, repetitive or not-repetitive
AR
(pulse width limited by Tj Max)
Single pulse avalanche energy
AS
(starting Tj=25°C, Id=Iar, Vdd=30V)
30 A
370 mJ
3/12
Electrical characteristics STP60NF06
2 Electrical characteristics
(T
Table 4. On/off states
=25°C unless otherwise specified)
CASE
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 5. Dynamic
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
Gate-body leakage
current (VDS = 0)
= 0)
ID = 250 µA, VGS = 0 60 V
V
= Max rating 1 µA
DS
=Max rating, TC=125°C 10 µA
V
DS
VGS = ±20V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 4 V
Static drain-source on
resistance
= 10V, ID = 30A 0.014 0.016 Ω
V
GS
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance VDS = 15V, ID=30A 50 S
Input capacitance
iss
Output capacitance 400 pF
oss
Reverse transfer
rss
capacitance
VDS = 25V, f = 1 MHz,
= 0
V
GS
1660 pF
140 pF
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 6. Switching times
Total gate charge
g
Gate-source charge 9 nC
gs
Gate-drain charge 23 nC
gd
VDD = 30V, ID = 60A,
= 10V
V
GS
(see Figure 12)
54 73 nC
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 30V, ID = 30A
V
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
DD
=4.7Ω VGS = 10V
R
G
(see Figure 11)
= 30V, ID = 30A,
V
DD
=4.7Ω, V
R
G
(see Figure 11)
GS
=10V
15
65
45
20
ns
ns
ns
ns
4/12
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