ST STP3NK80Z, STF3NK80Z, STD3NK80Z, STD3NK80Z-1 User Manual

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N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK

STP3NK80Z - STF3NK80Z

STD3NK80Z - STD3NK80Z-1

Zener-Protected SuperMESH™ Power MOSFET

TYPE V

STP3NK80Z
STF3NK80Z
STD3NK80Z
STD3NK80Z-1

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

800 V
800 V
800 V
800 V

(on) = 3.8 Ω

DS

DSS

R

DS(on)

< 4.5 Ω
< 4.5 Ω
< 4.5 Ω
< 4.5 Ω

I

D

2.5 A

2.5 A

2.5 A

2.5 A

Pw

70 W
25 W
70 W
70 W

REPEATIBILITY

DESCRIPTION

The SuperMESH ™ series is obtained through an
extreme optimi za tio n of ST’s well established strip­based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak­en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple­ments ST full range o f high voltage MOSFETs in­cluding revolutionary MDmesh™ products.

3

2

TO-220

DPAK

1

TO-220FP

3

1

IPAK

INTERNAL SCHEMATIC D IAGRAM

3

2

1

3

2

1

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

■ LIGHTING

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP3NK80Z P3NK80Z TO-220 TUBE
STF3NK80Z F3NK80Z TO-220FP TUBE

STD3NK80ZT4 D3NK80Z DPAK TAPE & REEL

STD3NK80Z-1 D3NK80Z IPAK TUBE

1/13September 2003

STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1

ABSOLUTE MAX IMUM RATINGS

Symbol Parameter Value Unit

STP3NK80Z STF3NK80Z

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

800 V

800 V
Gate- source Voltage ± 30 V
Drain Current (continuous) at TC= 25°C
Drain Current (continuous) at TC= 100°C

()

Drain Current (pulsed) 10 10 (*) 10 A
Total Dissipation at TC= 25°C

2.5 2.5 (*) 2.5 A

1.57 1.57 (*) 1.57 A

70 25 70 W

Derating Factor 0.56 0.2 0.56 W/°C

V

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2KV

dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤ 2.5A, di/dt ≤ 200 A/µs, VDD≤ V

(1) I

SD

(*) Limited only bymaximum temp erature allowed

Insulation Withstand Voltage (DC) - 2500 - V
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj≤TJMAX.

-55to150 °C

STD3NK80Z

STD3NK80Z-1

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.78 5 1.78 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W

T

l

Maximum Lead Temperature For Soldering Purpose

300 °C

DPAK

IPAK

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

= 25 °C, ID=IAR,VDD=50V)

j

2.5 A

170 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-SourceBreakdown

Igs= ± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEA TURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been des igned t o enhance not only the dev ice’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to sourc e. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of ex ternal components.

2/13

STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1

ELECTRICAL CHARACTE RISTICS (T

=25°C UNLES S OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS= 0 800 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

= Max Rating

DS

VDS= Max Rating, TC= 125 °C
V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

=50µA

3 3.75 4.5 V

1

50

VGS=10V,ID= 1.25 A 3.8 4.5 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(1) Forward Transconductance VDS=15V,ID= 1.25 A 2.1 S

g

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance

(3) Equivalent Output

Capacitance

t

d(on)

t

d(off)

Q
Q
Q

t

r

t

f

g
gs
gd

Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

=25V,f=1MHz,VGS= 0 485

V

DS

57
11

VGS=0V,VDS= 0V to 640V 22 pF

=400V,ID= 1.25 A

V

DD

RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)

17
27
36
40

=640V,ID= 2.5 A,

V

DD

VGS=10V

19

3.2

10.8

µA
µA

pF
pF
pF

ns
ns
ns
ns

nC
nC
nC

SOURCE DR AIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

VSD(1)

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD= 2.5 A, VGS=0
I

SD

VDD=50V,Tj= 25°C
(see test circuit, Figure 5)

I

SD

V

DD

(see test circuit, Figure 5)

= 2.5 A, di/dt = 100 A/µs

= 2.5 A, di/dt = 100 A/µs

=50V,Tj= 150°C

384

1600

8.4

474

2100

8.8

when VDSincreases from 0 to 80%

oss

2.5
10

1.6 V

A
A

ns

nC

A

ns

nC

A

3/13

STP3NK80Z - STF3NK80Z - STD 3NK80Z - STD3NK80Z-1

Safe O perating Area For T O-220/ DP AK/ IPAK

Thermal Impedance For TO-220/DPAK/IPAK

Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP

4/13

Transfer CharacteristicsOutput Characteristics