ST STB25NM50N-1, STF25NM50N, STP25NM50N, STW25NM50N, STB25NM50N User Manual

STB25NM50N

STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N

N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET

Table 1: General Features

TYPE	VDSS (@TjMAX)	ID	RDS(on)
STB25NM50N-1	550V	22 A	0.140 Ω
STF25NM50N	550V	22 A(*)	0.140 Ω
STP25NM50N	550V	22 A	0.140 Ω
STW25NM50N	550V	22 A	0.140 Ω
STB25NM50N	550V	22 A	0.140 Ω

■HIGH dv/dt AND AVALANCHE CAPABILITIES

■100% AVALANCHE TESTED

■LOW INPUT CAPACITANCE AND GATE CHARGE

■LOW GATE INPUT RESISTANCE

DESCRIPTION

The STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

APPLICATIONS

The MDmesh™ II family is very suitable for in - creasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Table 2: Order Codes

Figure 1: Package

	2	3	2	3
		1
	1

TO-220		I²PAK
		3
		1
		D²PAK
	3	3
		2
2
		1
1

TO-247	TO-220FP

Figure 2: Internal Schematic Diagram

	SALES TYPE	MARKING	PACKAGE	PACKAGING
	STP25NM50N	P25NM50N	TO-220	TUBE
	STF25NM50N	F25NM50N	TO-220FP	TUBE
	STB25NM50N-1	B25NM50N	I²PAK	TUBE
	STW25NM50N	W25NM50N	TO-247	TUBE
	STB25NM50N	B25NM50N	D²PAK	TAPE & REEL
				Rev. 9
	October 2005			1/16

STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Table 3: Absolute Maximum ratings

Symbol	Parameter	Value			Unit
		TO-220/D²PAK/I²PAK/		TO-220FP
		TO-247
VDS	Drain-source Voltage (VGS = 0)	500			V
VDGR	Drain-gate Voltage (RGS = 20 kΩ )	500			V
VGS	Gatesource Voltage	±25			V
ID	Drain Current (continuous) at TC = 25°C	22		22(*)	A
ID	Drain Current (continuous) at TC = 100°C	14		14 (*)	A
IDM ( )	Drain Current (pulsed)	88		88 (*)	A
PTOT	Total Dissipation at TC = 25°C	160		40	W
	Derating Factor	1.28		0.32	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	15			V/ns
Tstg	Storage Temperature	–55 to 150			°C
Tj	Max. Operating Junction Temperature	150			°C

( ) Pulse width limited by safe operating area

(1) ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS.

(*) Limited only by maximum temperature allowed

Table 4: Thermal Data

		TO-220/D²PAK/I²PAK/	TO-220FP
		TO-247
Rthj-case	Thermal Resistance Junction-case Max	0.78	3.1	°C/W
Rthj-amb	Thermal Resistance Junction-ambient Max	62.5		°C/W
Tl	Maximum Lead Temperature For Soldering	300		°C
	Purpose

Table 5: Avalanche Characteristics

Symbol	Parameter	Max Value	Unit
IAS	Avalanche Current, Repetitive or Not-Repetitive	10	A
	(pulse width limited by Tj max)
EAS	Single Pulse Avalanche Energy	350	mJ
	(starting Tj = 25 °C, ID = IAS, VDD = 50 V)

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STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

Symbol	Parameter	Test Conditions		Value		Unit
			Min.	Typ.	Max.
V(BR)DSS	Drain-source	ID = 1mA, VGS = 0	500			V
	Breakdown Voltage
dv/dt(2)	Drain Source Voltage	Vdd=400V, Id=25A,		44		V/ns
	Slope	Vgs=10V
IDSS	Zero Gate Voltage	VDS = Max Rating			1	µA
	Drain Current (VGS = 0)	VDS = Max Rating,
					10	µA
		TC = 125 °C
IGSS	Gate-body Leakage	VGS = ± 20V			100	nA
	Current (VDS = 0)
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250 µA	2	3	4	V
RDS(on)	Static Drain-source On	VGS = 10V, ID = 11 A		0.110	0.140	Ω
	Resistance

(2) Characteristic value at turn off on inductive load

Table 7: Dynamic

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
gfs (1)	Forward Transconductance	VDS=15 V, ID =11 A		19		S
Ciss	Input Capacitance	VDS = 25V, f = 1 MHz, VGS = 0		2565		pF
Coss	Output Capacitance			511		pF
Crss	Reverse Transfer			77		pF
	Capacitance
Coss eq. (*)	Equivalent Output	VGS = 0V, VDS = 0V to 400V		315		pF
	Capacitance
td(on)	Turn-on Delay Time	VDD =250 V, ID = 11A		23		ns
tr	Rise Time	RG = 4.7Ω VGS = 10 V		23		ns
td(off)	Off-voltageRise Time	(see Figure 19)		75		ns
tf	Fall Time			22		ns
Qg	Total Gate Charge	VDD = 400V, ID =22 A,		84		nC
Qgs	Gate-Source Charge	VGS = 10V,		11		nC
Qgd	Gate-Drain Charge	(see Figure 23)		35		nC
Rg	Gate Input Resistance	f=1MHz Gate DC Bias=0		1.6		Ω
		Test Signal Level=20mV
		Open Drain

Table 8: Source Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ISD	Source-drain Current				22	A
ISDM ( )	Source-drain Current (pulsed)				88	A
VSD (1)	Forward On Voltage	ISD = 22 A, VGS = 0			1.3	V
trr	Reverse Recovery Time	ISD = 22A, di/dt = 100 A/µs		460		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 25°C		6.9		µC
IRRM	Reverse Recovery Current	(see Figure 21)		30		A
trr	Reverse Recovery Time	ISD = 22 A, di/dt = 100 A/µs		532		ns
Qrr	Reverse Recovery Charge	VDD = 100 V, Tj = 150°C		8.25		µC
IRRM	Reverse Recovery Current	(see Figure 21)		31		A

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS

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STP25NM50N - STF25NM50N - STB25NM50N/-1 - STW25NM50N

Figure 3: Safe Operating Area For TO-220/

Figure 6: Thermal Impedance TO-220/I²PAK/

I²PAK/D²PAK

D²PAK

Figure 4: Safe Operating Area For TO-220FP

Figure 7: Thermal Impedance For TO-220FP

Figure 5: Safe Operating Area For TO-247

Figure 8: Thermal Impedance For TO-247

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Figure 9: Output Characteristics

Figure 12: Transfer Characteristics

Figure 10: Transconductance			Figure 13: Static Drain-Source On Resistance

Figure 11: Gate Charge vs Gate-source Voltage

Figure 14: Capacitance Variations

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