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STP22NF03L
N-CHANNEL 30V - 0.038Ω - 22A TO -220
STripFET™ POWER MOSFET
TYPE V
DSS
STP22NF03L 30V <0.05
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ LOW GATE CHARGE AT 100°C
■ APPLICATION ORIENTED CHARACTERIZATION
(on) = 0.038Ω
DS
R
DS(on)
I
D
Ω
22A
DESCRIPTION
This Power Mosfet is the latest development of S TMicroelectronics unique “Single Feat ure Size
™” strip-
based process. The resulting transistor shows extremely high packing density for low on-resistance,
rugged avalance characteristics and less critical alignment steps therefore a remarkable manuf acturing reproducibility.
APPLICATIONS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ AUTOMOTIVE ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
E
AS
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ±15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 88 A
Total Dissipation at TC = 25°C
22 A
16 A
45 W
Derating Factor 0.3 W/°C
(2)
Single Pulse Avalanche Energy 200 mJ
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1) ISD ≤10A, di/dt ≤300A/µs, VDD ≤ V
(2) Starting Tj=25°C, ID=11A, VDD=15V
(BR)DSS
, Tj ≤ T
JMAX.
1/8Aug 2000
STP22NF03L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 3.33 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
= 250 µA, VGS = 0
I
D
= Max Rating
V
DS
V
= Max Rating, TC = 125 °C
DS
= ±20V
V
GS
V
= VGS, ID = 250µA
DS
= 10V, ID = 11 A
V
GS
VGS = 5 V, ID = 11 A
V
> I
D(on)
x R
DS(on)max,
DS
VGS=10V
30 V
1µA
10 µA
±100 nA
1V
0.038 0.05
0.045 0.06
22 A
Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
> I
(1)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 90 pF
Reverse Transfer
Capacitance
D(on)
x R
DS(on)max,
V
DS
ID=1 1A
VDS = 25V, f = 1 MHz, VGS = 0
7S
330 pF
40 pF
2/8
STP22NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 100 ns
Total Gate Charge
Gate-Source Charge 3.6 nC
Gate-Drain Charge 2 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
r(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time 22 ns
Off-voltage Rise Time
Fall Time (see test circuit, Figure 5) 55 ns
Cross-over Time 75 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 22 A
(1)
Source-drain Current (pulsed) 88 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 18 nC
Reverse Recovery Current 1.2 A
Safe Operating Area Ther m al Imp e dence
= 15V, ID = 11A
DD
R
= 4.7Ω VGS = 4.5V
G
(see test circuit, Figure 3)
V
= 24V, ID = 22A,
DD
VGS = 10V
VDD = 15V, ID = 11A,
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
Vclamp =24V, I
R
=4.7Ω, V
G
GS
=22A
D
= 4.5V
ISD = 22A, VGS = 0
ISD = 22A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
11 ns
6.5 9 nC
25 ns
22 ns
1.5 V
30 ns
3/8
STP22NF03L
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/8
STP22NF03L
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STP22NF03L
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
6/8
E
TO-220 MECHANICAL DATA
STP22NF03L
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
7/8
STP22NF03L
8/8
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such informa tion n or for an y infring ement of patent s or other rig hts of third part ies which may resu lt from its use . No l i cen se i s
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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