ST STP22NE10L User Manual

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

N - CHANNEL 100V - 0.07 Ω - 22A TO-220

TYPE V

DSS

ST P22NE10L 100 V < 0.085 Ω 22 A

■ TYPICALR

■ LOW THRESHOLDDRIVE

■ LOGICLEVEL DEVICE

DS(on)

= 0.07 Ω

DESCRIPTION

This Power MOSFET is the latestdevelopmentof STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEED SWITCHING

■ SOLENOIDAND RELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

R

DS(on)

I

D

STP22NE10L

STripFET POWER MOSFET

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t

V

I

DM

P

E

AS

T

(•) Pulse width limitedby safe operating area (1) starting Tj

November 1999

Dra in- sour c e Volta ge (VGS= 0) 100 V

DS

Drain- gate Voltage (RGS=20kΩ) 100 V

DGR

Gate-s ource Voltage ± 20 V

GS

Dra in Cu rr ent (conti nuous) at Tc=25oC22A

I

D

Dra in Cu rr ent (conti nuous) at Tc= 100oC14A

I

D

(

Dra in Cu rr ent (pulsed) 88 A

•)

Tot al Dissipatio n at Tc=25oC90W

tot

Der ati ng Fa c t or 0.6 W/

(1) Single Pu lse Avalanche Ener gy 250 mJ

St orage Tempera t ure -65 to 175

stg

Max. Operating Jun ct ion Temperatur e 175

T

j

=25oC,ID=22A , VDD= 50V

o

C

o

C

o

C

1/8

STP22NE10L

THERMAL DATA

R

thj-case

R

thj-amb

T

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambie nt Max Maximum Lead Tempe rat ur e F or S o lder ing P urpose

l

1.67

62.5 300

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 100 V

Break dow n Vo lt age

I

ON (∗

DSS

GSS

Zero Gate Voltage Drain Curre nt (V

Gat e- bod y Leakag e Current (V

)

DS

=0)

GS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

= ± 20 V ± 100 nA

GS

1

10

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V Sta t ic Drain-s our c e On

Resistance On State Drain Current VDS>I

VGS=10V ID=15A V

=5V ID=15A

GS

D(on)xRDS(on)max

0.07

0.085

0.1

22 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=15 A 19 S

VDS=25V f=1MHz VGS= 0 1750

165

45

µA µ

Ω Ω

pF pF pF

A

2/8

STP22NE10L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(on)

Tur n-on Delay Tim e Rise Time

t

r

VDD=50V ID=8A R

=4.7

G

Ω

VGS=4.5V

40 80

(Resis t iv e Load, see fig. 3 )

Q Q Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=80V ID=16A VGS=10V 24

55 11

31 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD=50V ID=8A

=4.7 Ω VGS=4.5V

R

G

45 12

(Resis t iv e Load, see fig. 3 )

t

d(off)

Off-voltage Rise Time

t

Fall T ime

f

t

Cross-over Time

c

Vclamp = 80 V ID=16A

=4.7 Ω VGS=4.5V

R

G

(Indu ct iv e Load, see fig. 5)

12 17 35

SOURCEDRAIN DIODE

Symbol Parameter Test Condit ions Min. Typ. Max. Unit

I

V

I

SDM

SD

Q

I

RRM

SD

t

Source-drain Current

(•)

Source-drain Current

22 88

(pulsed)

(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 16 A di/dt = 100 A/µs

=40V Tj=150oC

V

DD

(see test circuit, fig. 5)

100

300 Charge Reverse Recovery

6

Current

ns ns

nC nC

ns ns

ns ns ns

A A

ns

nC

A

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

SafeOperating Area ThermalImpedance

3/8