ST STP21N05L, STP21N05LFI User Manual

STP21N05L

STP21N05L

STP21N05LFI

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

TYPE	VDSS	R DS ( on)	ID
STP21N05L	50 V	< 0.085 Ω	21 A
STP21N05LFI	50 V	< 0.085 Ω	14 A

■TYPICAL RDS(on) = 0.065 Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■REPETITIVE AVALANCHE DATA AT 100oC

■LOW GATE CHARGE

■LOGIC LEVEL COMPATIBLE INPUT

■175 oC OPERATING TEMPERATURE

■APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SOLENOID AND RELAY DRIVERS

■REGULATORS

■DC-DC & DC-AC CONVERTERS

■MOTOR CONTROL, AUDIO AMPLIFIERS

■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3	3
2	2
1	1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter		Value	Unit
		STP21N05L	STP21N05LFI
VD S	Drain-source Voltage (VGS = 0)		50	V
VDG R	Draingate Voltage (RGS = 20 kΩ)		50	V
VGS	Gate-source Voltage		± 15	V
ID	Drain Current (continuous) at Tc = 25 oC	21	14	A
ID	Drain Current (continuous) at Tc = 100 oC	14	9	A
ID M(•)	Drain Current (pulsed)	84	84	A
Ptot	Total Dissipation at Tc = 25 oC	80	35	W
	Derating Factor	0.53	0.23	W/oC
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65 to 175		oC
Tj	Max. Operating Junction Temperature		175	oC

(•) Pulse width limited by safe operating area

July 1993

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STP21N05L/FI

THERMAL DATA

					TO-220	ISOWATT220
Rthj-cas e	Thermal Resistance Junction-case			Max	1.88	4.29	oC/W
Rthjamb	Thermal	Resistance	Junction-ambient	Max		62.5	oC/W
Rt hcsin k	Thermal	Resistance	Case-sink	Typ		0.5	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose					300	oC

AVALANCHE CHARACTERISTICS

Symbol

IA R

EAS

EAR

IA R

Parameter	Max Value	Unit
Avalanche Current, Repetitive or Not-Repetitive	21	A
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy	80	mJ
(starting Tj = 25 oC, ID = IAR, VD D = 25 V)
Repetitive Avalanche Energy	20	mJ
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive	14	A
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ. Max.	Unit
V( BR)DSS	Drain-source	ID = 250 μA VG S = 0	50		V
	Breakdown Voltage
IDS S	Zero Gate Voltage	VDS = Max Rating		250	μA
	Drain Current (VGS = 0)	VDS = Max Rating x 0.8 Tc = 125 oC		1000	μA
IG SS	Gate-body Leakage	VGS = ± 15 V		± 100	nA
	Current (VD S = 0)

ON ( )

Symbol	Parameter		Test Conditions	Min.	Typ.	Max.	Unit
VG S(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 μA	1	1.6	2.5	V
RDS( on)	Static Drain-source On	VGS = 5 V	ID = 10.5 A		0.065	0.085	Ω
	Resistance	VGS = 5 V	ID = 10.5 A Tc = 100oC			0.17	Ω
ID( on)	On State Drain Current	VDS > ID( on) x RD S(on) max		21			A
		VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID( on) x RD S(on) max	ID = 10.5 A	6	15		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VG S = 0		700	1000	pF
Coss	Output Capacitance				250	350	pF
Crss	Reverse Transfer				70	100	pF
	Capacitance

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STP21N05L/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min. Typ. Max. Unit
td(on)	Turn-on Time	VDD = 30 V	ID = 10.5 A	65	95	ns
tr	Rise Time	RG = 50 Ω	VGS = 5 V	370	530	ns
		(see test circuit, figure 3)
(di/dt)on	Turn-on Current Slope	VDD = 40 V	ID = 21 A	130		A/μs
		RG = 50 Ω	VGS = 5 V
		(see test circuit, figure 5)
Qg	Total Gate Charge	VDD = 40 V	ID = 21 A VGS = 5 V	18	26	nC
Qgs	Gate-Source Charge			6		nC
Qgd	Gate-Drain Charge			10		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
tr(Vof f)	Off-voltage Rise Time	VDD = 40 V	ID = 21 A		70	100	ns
tf	Fall Time	RG = 50 Ω	VGS = 5 V		100	150	ns
tc	Cross-over Time	(see test circuit, figure 5)			180	260	ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ. Max.	Unit
IS D	Source-drain Current				21	A
ISDM(•)	Source-drain Current				84	A
	(pulsed)
VS D ( )	Forward On Voltage	ISD = 21 A	VG S = 0		1.6	V
trr	Reverse Recovery	ISD = 21 A	di/dt = 100 A/μs		65	ns
	Time	VDD = 30 V	Tj = 150 oC			μC
Qrr	Reverse Recovery	(see test circuit, figure 5)			0.13
	Charge
IRRM	Reverse Recovery				4	A
	Current

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Areas Safe Operating Areas

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